DS1109SG TRSYS | Alldatasheet

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ELECTRONICS af . LIMITED Rectifier Diode APPLICATIONS KEY PARAMETERS @ Rectification rem orl _ F(av) Ml Freewheel Diode ley 11500A @ DC Motor Control @ Power Supplies @ Welding ™@ Battery Chargers

FEATURES

™@ Double Side Cooling ™@ High Surge Capability VOLTAGE RATINGS Type Number Repetitive Peak Conditions Reverse Voltage Ver Vv TR1109SG50 5000 Vasu = Van + 100V TR1109SG49 4900 TR1109SG48 4800 TR1109SG47 4700 TR1109SG46 4600 TR1109SG45 4500. Lower voltage grades available. Outline type code: G See Package Details for further information. CURRENT RATINGS Double Side Cooled Continuous (direct) forward current Tyage = 100°C 1000 Single Side Cooled (Anode side) Continuous (direct) forward current Tyage = 100°C

Pam [ ew neo lesa Surge (non-repetitive) forward current 10ms half sine; T.,,, = 150°C 9.2 kA Pt Pt for fusing Va = 50% Vay - 1/4 sine 422x108 | A’s leu Surge (non-repetitive) forward current 10ms half sine; T.,.,.= 150°C 11.5 kA THERMAL AND MECHANICAL DATA CCC fs pe EE HS Rage) Thermal resistance - junction to case feet Single side cooled Cathode de 0.064 | °C/W aaa see SEE sims | [one || oo T, Virtual junction temperature remem i Toy Storage temperature range 55 175 °c : Clamping force 11.5 | 13.5 | kN CHARACTERISTICS [sim [Poem De [Jo View Forward voltage At 1800A peak, T,,,. = 25°C - 1.8 Vv ley Peak reverse current At Voy» Tease = 150°C : | 50 | ma Total stored charge |. = 1000A, dl,,/dt = 3A/us | tm | Peak recovery current Torso = 1500, V , = 100V | | © | a |

} /| é [7 _ / J T, = 150C = 1500 z $ T, = 25C / A ro} Z 1000 ‘A g 0) seeeadatie (ita aassataiiatittfaaaaaaiil 0.5 1.0 1.5 2.0 25 Instantaneous forward voltage V, - (V) Fig. 1 Maximum (limit) forward characteristics

2000 ssseatataa fefef eos a at def ofasocatil ~~ 1500 6 phase I | iB aay feee sees casta ne 8 I = 1000 : Gesadia doer fated ffosceattd fftat coed! 500 Ef, aan ee eal aati

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(e) 500 1000 1500 2000 Mean forward current |,ay, - (A) Fig. 2 Dissipation curves

Conditions: |. = 1000A T, = 150C _ V,_= 100V iS) 2 eat o © 1000 o | & FF a 3 | 3S ! Os a t = di,/at [— lan 100 0.1 1.0 10 100 Rate of decay of on-state current dl,/dt - (A/us) Fig. 3 Maximum total stored charge 1000 Conditions: T, = 150C & 100 ail : = S D c 0.1 1.0 10 100 Rate of decay of forward current dl,/dt - (A/us) Fig. 4 Maximum reverse recovery current

Pt=Pxt 30 450 = 25 425 5 5 oO = = 20; 400 § 3 ' £15 375 @ g 3 g 2 ® 10 aS 350 s | Sri ot aaa “ 0 300 1 10 1 235 10 20 50 WEEE ms Cycles at SOHz Duration Fig. 5 Surge (non-repetitive) forward current vs time (with 50% Vani Tease = 150C) 0.1 Conduction Effective thermal resistance Anode side cooled = Junction to case C/W Oo Double side Single side ~ d.c. 0.032 0.064 8 Halfwave 0.034 0.066 Double side ovoled 2 3phase 1200 0.044 0.076 uble si s 6 phase 600 0.057 0.089 s Z z | Ss 0.01 [vg oO a .001 ° 0 oot 0.01 0.1 1.0 10 Time - (s) Fig. 6 Transient thermal impedance - junction to case - (C/W)