DS1104SG IRI | Alldatasheet

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¾ Wide current range ¾ High voltage ratings up to 3000 V ¾ High surge current capabilities ¾ Diffused junction ¾ Hockey PUK version TYPICAL APPLICATIONS ¾ Co nverters ¾ Power supplies ¾ Machine tool controls ¾ High power drives ¾ Medium traction applications INTERNATIONAL STANDARD RECOVERY DIODE (G) VRRM (V) VRSM (V) www.rectifierindia.com April 2011 DS1104SG DEVICE TYPE DS1104SG3030 CURRENT RATINGS Tcase = 75oC unless otherwise stated Symbol Parameter Conditions Double Side Cooled IF(AV) Mean forward current IF(RMS) RMS value IF Continuous (direct) forward current Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value IF Continuous (direct) forward current UnitsMax. Half wave resistive load 1849 A - 2904 A - 2545 A Half wave resistive load 1173 A - 1843 A - 1502 A DS1104SG2828 DS1104SG1616 3000 2800 1600 29 00 1700 3100 TECHNICAL DATA A ll data sheet.com

www.rectifierindia.com April 2011 Symbol Parameter Conditions Double Side Cooled IF(AV) Mean forward current IF(RMS) RMS value IF Continuous (direct) forward current Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value IF Continuous (direct) forward current UnitsMax. Half wave resistive load 1315 A - 2065 A - 1880 A Half wave resistive load 840 A - 1320 A - 1130 A Tcase = 100oC unless otherwise stated SURGE RATINGS Conditions 10ms half sine; Tcase = 175oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 175oC VR = 0 Max. UnitsSymbol Parameter IFSM Surge (non-repetitive) forward current I2tI 2t for fusing IFSM Surge (non-repetitive) forward current I2t I2t for fusing A2s 20.0 kA 1.28x 106 A2s 16.0 kA 2.0 x 106 THERMAL AND MECHANICAL DATA dc Conditions Min. Max. Units oC/W- 0.064Anode dc Clamping force 12.0kN with mounting compoundThermal resistance - case to heatsinkRth(c-h) 0.008Double side - 175 oC Tvj Virtual junction temperature Tstg Storage temperature range Reverse (blocking) Single side Thermal resistance - junction to caseRth(j-c) Single side cooled Symbol Parameter -55 200 oC Forward (conducting) - 185 oC - 0.016 oC/W oC/W Cathode dc - 0.064 oC/W Double side cooled - 0.032 oC/W Clamping force- 11.5 13.5 kN STANDARD RECOVERY DIODE DS1104SG A ll data sheet.com

www.rectifierindia.com April 2011 CHARACTERISTICS Forward voltage Peak reverse current Parameter μC1600 At Tvj = 175˚C - QS Total stored charge IF = 1000A, dIrr/dt = 3A/μs Tcase = 175˚C, VR = 100V Symbol VFM IRRM Irr Reverse recovery current VTO Threshold voltage rT Slope resistance 0.31 mΩ At Tvj = 175˚C - 0.67 V -8 5A At VRRM, Tcase = 175oC- 50 mA - 1.3 VAt 1800A peak, Tcase = 25oC Conditions Min. Max. Units CURVES Fig.2 Maximum (limit) forward characteristics Fig.3 Dissipation curves VFM Equation:- VFM = A + Bln (IF) + C.IF+D.√IF Where A = 0.82527 B = –0.07771 C = 0.00012 D = 0.019599 these values are valid for Tj = 125˚C for IF 500A to 2500A 0.5 1.0 1.5 2.0 Instantaneous forward voltage, VF - (V) 500 1000 1500 2000 2500Instantaneous forward current, IF - (A) Measured under pulse conditions Tj = 25˚CTj = 175˚C 0 1000 2000 3000 Mean forward current, IF(AV) - (A) 1000 2000 3000 4000Mean power dissipation - (W) dc Half wave 3 phase 6 phase STANDARD RECOVERY DIODE DS1104SG A ll data sheet.com

www.rectifierindia.com April 2011 Fig.4 Total stored charge Fig.5 Maximum reverse recovery current Fig.7 Maximum (limit) transient thermal impedance - junction to case Fig.6 Surge (non-repetitive) forward current vs time (with 50% VRRM at Tcase 175˚C) 0.1 1.0 10 100 Rate of decay of on-state current dIF/dt - (A/µs) 10000 1000 100 Stored charge, QS - (µC) Conditions: Tj = 175˚C VR = 100V IF = 1000A IRM IF dIF/dt QS 0.1 1.0 10 100 Rate of decay of forward current, dIF/dt - (A/µs) 1000 100 Reverse recovery current Irr - (A) Conditions: Tj = 175˚C VR = 100V IF = 1000A 1 1 01 2 3 51 0 2 0 5 0 800 900 700 1000 1100 I2t value - (A2s x 103) ms Cycles at 50Hz Duration Peak half sine forward current - (kA) I2t = Î2 x t 1200 1300 I2t 0.1 0.01

0.001 Thermal Impedance - junction to case, Rth(j–c) - (˚C/W)

0.001 0.01 0.1 1.0 10 Time - (s) Anode side cooled Double side cooled Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ Effective thermal resistance Junction to case ˚C/W Double side 0.032 0.034 0.044 0.057 Single side 0.064 0.066 0.076 0.089 STANDARD RECOVERY DIODE DS1104SG A ll data sheet.com

www.rectifierindia.com April 2011 PACKAGE OUTLINE All dimensions are in mm. Hole Ø3.6 x 2.0 deep (in both electrodes) Ø34 nom 27.0 25.4 Cathode AnodeØ34 nom Ø58.5 max Nominal weight: 250g Clamping force: 12kN ±10% Package outine type code: G STANDARD RECOVERY DIODE DS1104SG Plot No 151, Udyog Kendra, Extn.-II, Ecotech-III, Greater Noida-201306 Toll Free No.: 1800 3070 9989 , Fax : 011-27491404 E-mail : insel@rectifierindia.com, sales@rectifierindia.com Insel Rectifiers (India) Pvt. Ltd. (An ISO 9001:2015, ISO 14001:2015 Certified Company) A ll data sheet.com