DRF200G MICROSEMI | Alldatasheet

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Technical content

15V, 8A, 30MHz The DRF200 is a High-Speed Power MOSFET driver with a unique anti-ring function. It is intended to drive the gate of a power MOSFET with ≥3nF gate capacitance to 15V at frequencies up to 15MHz. It can produce output currents ≥8A RMS, while dissipating 60W. TYPICAL APPLICATIONS

  • MOSFET Drivers
  • RF Generators
  • Switch Mode Power Amplifi ers
  • Digital Output Amplifi ers
  • Pulse Generators
  • Laser Diode Drivers
  • Ultrasound Transducer Drivers
  • Acoustic Optical Modulators
  • High Power Clock Drivers

FEATURES

  • Switching Frequency: DC TO 30MHz 50Ω Load
  • Switching Frequency: DC TO 15MHz 3nf Load
  • Switching Speeds 10ns 50Ω, 15ns 3nF Load
  • Low Pulse Width Distortion, ≤ 2%
  • Single Power Supply
  • 1V CMOS Schmitt Trigger Input ~ 1V Hysteresis
  • Current Output Pk 8A RMS
  • Power Dissipation Capability 60W
  • RoHS compliant Symbol Parameter Ratings Unit VDD Supply Voltage 18 VIN Input Single Voltage -.7 to +5.5 IO PK Output Current Peak 8A TJMAX Operating Temperature 175 °C MOSFET Driver Driver Absolute Maximum Ratings Driver Specifi cations Symbol Parameter Min Typ Max Unit VDD Supply Voltage 81 5 1 8 VIN Input Voltage 3 5.5 IN(R) Input Voltage Rising Edge 3 ns IN(F) Input Voltage Falling Edge 3 IDDQ Quiescent Current 2m A IO Output Current 8A Coss Output Capacitance 2500 pF Ciss Input Capacitance 3 RIN Input Parallel Resistance 1m Ω VT(ON) Input, Low to High Out 0.8 1.1 V VT(OFF) Input, High to Low Out 1.9 2.2 TD Prop. Delay 35 nstr Rise Time 10 tf Fall Time 10 Microsemi Website - http://www.microsemi.com 050-4970 Rev B 4-2009 DRF200 IN SG GND +Vdd OUT

DRF200GOutput Characteristics Symbol Parameter Min Typ Max Unit Rout Output Resistance 1 Ω FMAX Operating Frequency CL=3000nF + 50Ω 15 MHz FMAX Operating Frequency RL=50Ω 30 Thermal Characteristics Symbol Parameter Ratings Unit RθJC Thermal Resistance Junction to Case 1.4 °C/W RθJHS Thermal Resistance Junction to Heat Sink 2.2 TJSTG Storage Temperature -55 to 150 °CTJMAX Maximum Junction Temperature 175 PD Maximum Power Dissipation @ TSINK = 25°C >60 W PDC Total Power Dissipation @ TC = 25°C >100 Microsemi reserves the right to change, without notice, the specifi cations and information contained herein. 050-4970 Rev B 4-2009 Figure 1, DRF100 Simplifi ed Circuit Diagram The Simplifi ed DRF100 Circuit Diagram is illustrated above. The Schmitt trigger input (pin 1), Kelvin signal ground (pin 2) and the Anti-Ring Function, provide improved stability and control. The IN pin (1) is applied to a Schmitt Trigger. The signal is then applied to the intermediate drivers and level shifters; this section contains proprietary circuitry designed specifi cally for ring abatement. The P channel and N channel power drivers provide the high current to the OUTPUT (pin 5.)

Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved. DRF200G 050-4970 Rev B 4-2009 The Test Circuit illustrated above was used to evaluate the DRF200 (available as an evaluation Board DRF2XX / EVALSW.) The input control signal is applied to the DRF200 via IN(1) and SG(2) pins using RG188. This provides excellent noise immunity and control of the signal ground currents. The +V DD input (4) is by-passed by C1. The capacitor used for this function must be capable of supporting the RMS currents and frequency of the gate load. Figure 2, DRF200 Test Circuit

Figure 3, DRF200 Mechanical Outline All dimensions are ± .005 DRF200G 050-4970 Rev B 4-2009 Pin Assignments Pin 1 IN Pin 2 SG Pin 3 Ground Pin 4 +Vdd Pin 5 Out 0.823 0.244 0.221 0.629 0.199 0.023 0.094 .400 .100 0.048 DRF200 IN SG GND +Vdd OUT 0.070