DRF1200 ADPOW | Alldatasheet

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Technical content

Driver Absolute Maximum Ratings Driver Specifications TJ = 25°C unless otherwise specified Driver Specifications MOSFET Driver Hybrid TYPICAL APPLICATIONS

  • Class C, D and E RF Generators
  • Switch Mode Power Amplifiers
  • Pulse Generators
  • Ultrasound Transducer Drivers
  • Acoustic Optical Modulators DRIVER FEATURES
  • Switching Frequency: DC TO 30MHz
  • Low Pulse Width Distortion
  • Single Power Supply
  • 3V CMOS Schmitt Trigger Input 1V Hysteresis
  • Drivers > 3nF MOSFET FEATURES
  • Switching Frequency: DC TO 30MHz
  • Switching Speed 3-4ns
  • B Vds = 1kV
  • I ds = 13A avg.
  • R ds(on) ≤ 1 Ohm
  • P D = 350W Unit V Unit ns Unit V ns µA A pF V ns Ratings 5.5 Min Typical Max 3.1 7.5 2.8 7.5 33 38 1.2 Min Typ Max 8 18 1.8 2.2 0.8 1.2 200 8.5 2500 0.8 1.0 1.9 2.2 RL CLTest Conditions 15VDD 15VDD 15V 15VDD Parameter Supply Voltage Input Single Voltage Parameter Rise Time 2,3 Fall Time 2,3 Prop. Delay 2,4 Symmetry 1 Parameter Supply Voltage Input Voltage Input Voltage Rising Edge Input Voltage Falling Edge Quiescent Current Max Output Current Output Capacitance Input Capacitance Input Low Input High Time Delay (throughput) Symbol VDD VIN Symbol tr tf TD Symbol VDD VIN VIN(R) VIN(F) IDDQ IO Coss Ciss VIL VIH TDLY DRF1200 15V, 13A, 30MHz The DRF1200 MOSFET driver hybrid. This hybrid includes a high power gate driver and the power MOSFET. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution. 050-4913 Rev A 2-2006APT Website - http://www.advancedpower.com

Figure 1, DRF1200 Simplified Ciruit Diagram A Simplified DRF1200 Circuit Diagram is illustrated above. By including the driver high speed by-pass capacitors (C1-C8), their contribution to the internal parasitic loop inductance of the driver output is greatly reduced. This, coupled with the tight geometry of the hybrid, allows optimal the gate drive to the MOSFET. This low parasitic approach, coupled with the Schmitt trigger input, Kelvin signal ground and the Anti-Ring Function, Provide improved stability and control in Kilowatt to Multi-Kilowatt, High Frequency applications. The IN pin is the input for the control signal and is applied to a Schmitt Trigger. The signal is then applied to the intermediate drivers and level shifters; this section contains proprietary circuitry designed specifically for ring abatement. The P channel and N channel power drivers provide the high current to the gate of the MOSFET and the MOSFET drain is attached to the OUT pin (9). Driver Control Logic In (4) HIGH Driver Driver Output LOW MOSFET OFF Drain (9) HIGH In (4) LOW Driver Driver Output HIGH MOSFET ON Drain (9) LOW The FUNCTION, FN, pin (3) is used to disable the Anti-Ring function. It is recommended that the device be operated with this function On the Output side are the POWER GROUND connections pin 8 and pin 10. The DRAIN connection is pin 9. It is suggested that output currents be restricted to these pins by design. Thermal Characteristics Dynamic Characteristics Test curcuit show on page 3. All measurements were made with the Anti-Ring circuit activated unless noted. 1. Symmetry is the percent difference in high and low FWHM times with a 50% duty cycle square wave input. 2 R L = 50Ω, CL = 3000pF 3 10% - 90% See Test Circuit 4 50% - 50%, see Test Circuit 5 V DD = 18V, CL = 3000pF, F = 10MHz 6 Performance specified with this input. APT reserves the right to change, without notice, the specifications and information contained herein. Unit V A Ω Unit pF Unit °C/W W Min Typ Max 1000 0.90 Ratings 0.13 175 >100 1050 Min Typ Max 2000 165 Parameter Drain-Source Voltage Continuos Drain Current THS = 25°C Drain-Source On State Resistance Characteristic Junction to Case Thermal Resistance Operating and Storage Junction Temperature Maximum Power Dissipation Total Power Dissipation @ TC = 25°C Parameter Input Capacitance Output Resistance Reverse Transfer Capacitance Symbol VDSS ID RDS(on) Symbol RθJC TJ PD PDC Symbol Ciss Coss Crss 050-4913 Rev A 2-2006 DRF1200

The Test Circuit illustrated above was used to evaluate the DRF1200 (available as an evaluation Board DRF1200 EVAL). The input control signal is applied to the DRF1200 via IN(4) and SG(5) pins using RG188. This provides excel- lent noise immunity and control of the signal ground currents. The FN pin is very sensitive and unwanted signals can cause erratic behavior, Therefore FN pin is heavily by-passed on the Evaluation board, see FN (3) above. The +VDD inputs (2,6) are By-Passed (C1-C3, C5-C7), this is in addition to the internal bypassing mentioned previ- ously. The capacitors used for this function must be capable of supporting the RMS currents and frequency of the gate load. A 50Ω (R4) load is used evaluate the output performance of the DRF1200. Figure 2, Test Circuit 050-4913 Rev A 2-2006 DRF1200

0.100 0.040 0.300 .005in. Typ. Half Hard Copper Gold Plated 1.500 1.00 0.06 0.04 1.25 0.750 0.300 0.300 5600 5600 5600 5600 5600 5600 5600 5600 APT DRF1200 .115 in. Clear 4 Places .090 Gap Typ. .050 Gap Typ. GND+VDD FN IN SG +VDD +VDD 1 2 3 4 5 6 7 DRAI NSOURCE GND SOURCE GND 10 9 8 GND Figure 8, DRF1200 Mechanical Outline 050-4913 Rev A 2-2006 DRF1200

+Vdd By-Pass Capacitors +Vdd By-Pass Capacitors Vds Monitor Control In FN By-Pass Decoupling Resistors Control In 50Ω Terminator This Section Configured by User Figure 9, DRF1200 Eval Board The DFR1200 is a high power device and must have adequate cooling for full power operation Evaluation Boards are provided to facilitate the circuit design process by allowing the end user to quickly evaluate the performance of our components under a specific and single set of conditions. They are not intended to be used as a sub assembly in any final product(s). Care has been taken to insure that the Evaluation Boards are assembled to correctly represent the test circuit included in the component data sheet. There is no warranty of these Evaluation Boards beyond workmanship and materials. 050-4913 Rev A 2-2006 DRF1200

5.196 5.5 3.196 1.425 1.145 1.7 0.900 Advanced Power Technology DRF1200 RE 12/06/05 revD 3.50 See DRF1200 mechanical drawing for physical dimension details PCB material - .062 FR4 4 holes .150 dia. Figure 10, DRF1200 Eval Board Mechanical 050-4913 Rev A 2-2006 DRF1200