DRE3 SANYO | Alldatasheet
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- Glass passivation for high reliability - Peak OF F-state (reverse) voltage : — 100 to ~600V : + Average ON-state current : 3A - TO-202 package Repetitive Peak OFF-State Voltage Vprm Rox =3302 100 200 400 600 V Non-Repetitive Peak Vrsm Rex =3300 150 —300 -500 -~720 V Reverse Voltage Repetitive Peak Reverse Voltage Vrrm Rox=3302 -100 -200 ~-400 -600 V Average ON-State Current Inav) Te=90°C, > Dad > 3 A single-phase half-wave RMS ON-State Current Its) > > ad 47 A Surge ON-State Current Itsm Sine half-wave > > > 60 A lcycle, 50Hz Amperes Squared-Seconds f?T-dt ImsStS10ms > > > 20 A2S Peak Gate Power Dissipation Pom f250Hz,dutyS10% > > > 05 W Average Gate Power Dissipation Pgav) > => > 0.05 W Peak Gate Forward Current Ipgm f250Hz,dutyS10% — > > 02 =A Peak Gate Reverse Voltage Vrom > > > -5 V Junction Temperature Tj > > > 125 °C Storage Temperature Tstg > > —40to +125 °C Weight > > > 15° ¢g Electrical Characteristics at Ta= 25°C min typ max unit Repetitive Peak Ippm T= 125°C, Vp = Vorm. Rex =3302 2 mA OFF-State Current Repetitive Peak Irrem — Tj=125°C,Vp= Varo. Rex =3302 2 mA Reverse Current Peak ON-State Voltage Very Ipm=12A 1.6 Vv Critical Rate of Rise of dv/dt Te=75°C, Vp= 2/3 Vprm. Rex = 3302 50 Vins OFF-State Voltage Holding Current In RL=1002,Rg¢K = 3302 4 mA Gate Trigger Current Ior Vp =6V,R,=1002,Rg¢K =3302 200 «~pA Gate Trigger Voltage Ver Vp=6V,Ri=1000,RgK = 3302 0.8 v Gate Nontrigger Voltage Vgp Te= 125°C, Vp=2/3Vpru,RgK = 3302 0.2 v Thermal Resistance Rthg—e) 6.0 °C/W Package Dimensions 1150 (atm) mes phe eae iin 6 A e ic 4 lat al FE 4 % Ss} S|
4 A: Anode
. ° C: Cathode SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 3019TA,TS No.1913-1/3
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