DRD (XXXX) W
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 8
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DRD (xxxx) W Document number: DS30573 Rev. 11 - 2 1 of 8 www.diodes.com February 2021 © Diodes Incorporated DRD (xxxx) W COMPLEX ARRAY FOR RELAY DRIVERS Features and Benefits
- Epitaxial Planar Die Construction
- One Transistor and One Switching Diode in One Package
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data
- Case: SOT-363
- Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections: See Diagram
- Terminals: Finish - Matte Tin annealed over Alloy 42 lead-frame. Solderable per MIL-STD-202, Method 208
- Weight: 0.008 grams (approximate) Ordering Information (Note 4) Device Compliance Packaging Shipping DRDP006W-7 Commercial SOT-363 3000/Tape & Reel DRDNB16W-7 Commercial SOT-363 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlori ne (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2005 ….. 2021 2022 2023 2024 2025 2026 Code S ….. I J K L M N Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Top View DRDP006W DRDNB16W RDxx = Product Type Marking Code: RD02 = DRDP006W RD03 = DRDNB16W YM = Date Code Marking Y = Year (ex: I = 2021) M = Month (ex: 9 = September) RDxx YM R1 = 1K Ω R2 = 10K Ω
DRD (xxxx) W Document number: DS30573 Rev. 11 - 2 2 of 8 www.diodes.com February 2021 © Diodes Incorporated DRD (xxxx) W Maximum Ratings, Total Device @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 200 mW Thermal Resistance, Junction to Ambient Air (Note 5) RθJA 625 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Maximum Ratings, DRDP006W PNP Transistor @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5.0 V Collector Current (Note 5) IC -600 mA Maximum Ratings, DRDNB16W Pre-Biased NPN Transistor @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Supply Voltage VCC 50 V Input Voltage VIN -5 to +10 V Output Current IC 600 mA Maximum Ratings, Switching Diode @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 75 V RMS Reverse Voltage VR(RMS) 53 V Forward Continuous Current (Note 5) IFM 500 mA Average Rectified Output Current (Note 5) IO 250 mA Non-Repetitive Peak Forward Surge Current @ t = 1.0μs @ t = 1.0s IFSM 4.0 1.0 A Note: 5. Device mounted on FR-4 PCB, 1 inch square 2oz copper pad area.
DRD (xxxx) W Document number: DS30573 Rev. 11 - 2 3 of 8 www.diodes.com February 2021 © Diodes Incorporated DRD (xxxx) W Characteristic (Note 6) Symbol Min Typ Max Unit Test Condition DC Current Gain hFE 100 300 IC = -150mA, VCE = -10V Collector-Emitter Saturation Voltage VCE(SAT) -0.4 V IC = -150mA, IB = -15mA Collector-Base Breakdown Voltage V(BR)CBO -60 V IC = -10μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 V IC = -10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE = -10μA, IC = 0 Collector Cutoff Current ICBO -10 nA VCB = -50V, IE = 0 Current Gain-Bandwidth Product fT 200 MHz VCE = -20V, IC = -50mA, f = 100MHz Capacitance Cobo 8 pF VCB = -10V, IE = 0, f = 1MHz Characteristic (Note 6) Symbol Min Typ Max Unit Test Condition Input Voltage Vl(off) 0.3 V VCC = 5V, IO = 100μA Vl(on) 2.0 V VO = 0.3V, IO = 20mA Output Voltage VO(on) 0.3 V IO/Il = 50mA/2.5mA Input Current Il 7.2 mA VI = 5V Output Current IO(off) 0.5 μA VCC = 50V, VI = 0V DC Current Gain Gl 56 VO = 5V, IO = 50mA Gain-Bandwidth Product fT 200 MHz VCE = 10V, IE = 5mA, f = 100MHz Electrical Characteristics, Switching Diode @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 6) V(BR)R 75 IR = 10µA Forward Voltage VF 0.62 0.72 0.855 1.0 1.25 V IF = 5.0mA IF = 10mA IF = 100mA IF = 150mA Reverse Current (Note 6) IR 2.5 μA μA μA nA VR = 75V VR = 75V, TJ = 150°C VR = 25V, TJ = 150°C VR = 20V Total Capacitance CT 4.0 pF VR = 0, f = 1.0MHz Reverse Recovery Time trr 4.0 ns IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω Note: 6. Short duration pulse test used to minimize self-heating effect.
DRD (xxxx) W Document number: DS30573 Rev. 11 - 2 4 of 8 www.diodes.com February 2021 © Diodes Incorporated DRD (xxxx) W Device Characteristics 100 40 200 P , POWER DISSIPATION (mW)D T , AMBIENT TEMPERATURE (°C) Fig. 1, Power Derating Curve (Total Device) A 150 200 250 0 80 120 160 R = 625°C/WθJA 0.1 0.2 0.3 0.6 0.5 0.4 1 10 100 1,000 I , COLLECTOR CURRENT (mA) Fig.11, Typical Collector-Emitter Saturation Voltage vs. Collector Current (DRDP006W) C V , COLLECTOR-EMITTER SATURATION VOLTAGE (V) CE(SAT) I I C B = 10 T = 150°CA T = 25°CA T = -50°CA I , BASE CURRENT (mA) Fig. 12, Typical Collector Saturation Region (DRDP006W) B V , COLLECTOR-EMITTER VOLTAGE (V)CE 0.001 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 I = 1mAC I = 10mAC I = 30mAC I = 100mAC I = 300mAC 1,000 100 1 10 100 f , GAIN BANDWIDTH PRODUCT (MHz)T I , COLLECTOR CURRENT (mA) Fig. 15, Typical Gain Bandwidth Product vs. Collector Current (DRDP006W) C V = 5VCE 1.0 5.0 -0.1 -10-1.0 -30 C, CAPACITANCE (pF) V , REVERSE VOLTAGE (V) Fig. 16, Typical Capacitance (DRDP006W) R Cibo f = 1MHz Fig. 2, Fig. 3, Fig. Fig. 5,
DRD (xxxx) W Document number: DS30573 Rev. 11 - 2 5 of 8 www.diodes.com February 2021 © Diodes Incorporated DRD (xxxx) W Device Characteristics (continued) 100 1,000 0.1 0 1.61.20.4 0.8 I , INSTANTANEOUS FORWARD CURRENT (mA)F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 17, Typical Forward Characteristics (Switching Diode) F T = -40ºCA 0.1 100 1,000 10,000 0 20 40 60 80 100 V , REVERSE VOLTAGE (V) Fig. 18, Typical Reverse Characteristics (Switching Diode) R I , INSTANTANEOUS REVERSE CURRENT (nA)R T = 125ºCA 0.5 2.5 1.5 0 10 20 4030 C , TOTAL CAPACITANCE (pF)T V , REVERSE VOLTAGE (V) Fig. 19, Typical Capacitance vs. Reverse Voltage (Switching Diode) R f = 1MHz Fig. 6, Fig. 7, Fig. 8,
DRD (xxxx) W Document number: DS30573 Rev. 11 - 2 6 of 8 www.diodes.com February 2021 © Diodes Incorporated DRD (xxxx) W Sample Applications source configuration, bias resistors not included current sink configuration with built-in bias resistors Relay DRDNB16W 1kΩ 10kΩ RL Relay DRDP006W RL
DRD (xxxx) W Document number: DS30573 Rev. 11 - 2 7 of 8 www.diodes.com February 2021 © Diodes Incorporated DRD (xxxx) W Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 e D L b E F c a SOT363 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 0.95 b 0.10 0.30 0.25 c 0.10 0.22 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC F 0.40 0.45 0.425 L 0.25 0.40 0.30 a 0° 8° -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 Y1 G Y X C Dimensions Value (in mm) C 0.650 G 1.300 X 0.420 Y 0.600 Y1 2.500
DRD (xxxx) W Document number: DS30573 Rev. 11 - 2 8 of 8 www.diodes.com February 2021 © Diodes Incorporated DRD (xxxx) W IMPORTANT NOTICE 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUME NT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. 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