DRDNB26W-7 | DigiCamel IC Datasheet

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DRDPB26W DIODES | Alldatasheet

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PDF pages: 9

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Features

Notes: 1. No purposefully added lead. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. P/N R1 (NOM) R2 (NOM) DRDNB16W DRDPB16W DRDNB26W DRDPB26W 220 220 10K 10K 4.7K 4.7K DRDNB16W/ DRDNB26W DRDPB16W/ DRDPB26W Maximum Ratings, DRDN005W NPN Transistor Characteristic Symbol Value Unit Collector-Base Voltage VCBO V Collector-Emitter Voltage VCEO V Emitter-Base Voltage VEBO 4.0 V Collector Current - Continuous (Note 3) IC 500 mA @ TA = 25°C unless otherwise specified SPICE MODELS: DRDPB26W DRDN005W DRDN010W DRDNB16W DRDNB26W DRDP006W DRDPB16W

DS30573 Rev. 8 - 2 2 of 9 DRD (xxxx) W www.diodes.com T C U D O R P W E N Maximum Ratings, DRDP006W PNP Transistor @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5.0 V Collector Current (Note 3) IC -600 mA Maximum Ratings, DRDNB16W Pre-Biased NPN Transistor @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Supply Voltage VCC V Input Voltage VIN -5 to +10 V Output Current IC 600 mA Maximum Ratings, DRDNB26W Pre-Biased NPN Transistor Characteristic Symbol Value Unit Supply Voltage VCC V Input Voltage VIN -5 to +5 V Output Current IC 600 mA @ TA = 25°C unless otherwise specified Maximum Ratings, DRDPB16W Pre-Biased PNP Transistor Characteristic Symbol Value Unit Supply Voltage VCC -50 V Input Voltage VIN +5 to -10 V Output Current IC 600 mA Maximum Ratings, DRDPB26W Pre-Biased PNP Transistor Characteristic Symbol Value Unit Supply Voltage VCC -50 V Input Voltage VIN +5 to -5 V Output Current IC -600 mA Maximum Ratings, Switching Diode Characteristic Symbol Value Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR V RMS Reverse Voltage VR(RMS) V Forward Continuous Current (Note 3) IFM 500 mA Average Rectified Output Current (Note 3) IO 250 mA Non-Repetitive Peak Forward Surge Current @ t = 1.0µs @ t = 1.0s IFSM 4.0 2.0 A @ TA = 25°C unless otherwise specified @ TA = 25°C unless otherwise specified @ TA = 25°C unless otherwise specified

DS30573 Rev. 8 - 2 3 of 9 DRD (xxxx) W www.diodes.com T C U D O R P W E N @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition DC Current Gain hFE 150 800 IC = 100mA, VCE = 1V Collector-Emitter Saturation Voltage VCE(SAT) 0.5 V IC = 300mA, IB = 30mA Collector-Base Breakdown Voltage V(BR)CBO V IC = 100µA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO V IC = 1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO V IE = 100µA, IC = 0 Collector Cutoff Current ICBO µA VCB = 40V, IE = 0 Emitter Cutoff Current IEBO µA VEB = 4V, IC = 0 Current Gain-Bandwidth Product fT 100 MHz VCE = 10V, IC = 50mA, f = 100MHz Capacitance Cobo pF VCB = 10V, IE = 0, f = 1MHz Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO V IC = 100µA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 4.0 V IE = 100µA, IC = 0 Collector Cutoff Current ICBO 100 nA VCB = 60V, IE = 0 VCB = 80V, IE = 0 Collector Cutoff Current ICES 100 nA VCE = 60V, IBO = 0V VCE = 80V, IBO = 0V DC Current Gain hFE 100 IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) 0.25 V IC = 100mA, IB = 10mA Base-Emitter Saturation Voltage VBE(SAT) 1.2 V IC = 100mA, VCE = 1.0V Current Gain-Bandwidth Product fT 100 MHz VCE = 2.0V, IC = 10mA, f = 100MHz @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition DC Current Gain hFE 100 300 IC = -150mA, VCE = -10V Collector-Emitter Saturation Voltage VCE(SAT) -0.4 V IC = -150mA, IB = -15mA Collector-Base Breakdown Voltage V(BR)CBO -60 V IC = -10µA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 V IC = -10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO V IE = -10µA, IC = 0 Collector Cutoff Current ICBO -10 nA VCB = -50V, IE = 0 Current Gain-Bandwidth Product fT 200 MHz VCE = -20V, IC = -50mA, f = 100MHz Capacitance Cobo pF VCB = -10V, IE = 0, f = 1MHz Characteristic Symbol Min Typ Max Unit Test Condition Input Voltage Vl(off) 0.3 V VCC = 5V, IO = 100µA Vl(on) 2.0 V VO = 0.3V, IO = 20mA Output Voltage VO(on) 0.3V V IO/Il = 50mA/2.5mA Input Current Il 7.2 mA VI = 5V Output Current IO(off) 0.5 µA VCC = 50V, VI = 0V DC Current Gain Gl VO = 5V, IO = 50mA Gain-Bandwidth Product fT 200 MHz VCE = 10V, IE = 5mA, f = 100MHz

DS30573 Rev. 8 - 2 4 of 9 DRD (xxxx) W www.diodes.com T C U D O R P W E N Characteristic Symbol Min Typ Max Unit Test Condition Input Voltage Vl(off) -0.5 V VCC = -5V, IO = -100µA Vl(on) -3.0 V VO = -0.3V, IO = -20mA Output Voltage VO(on) -0.3V V IO/Il = -50mA/-2.5mA Input Current Il -28 mA VI = -5V Output Current IO(off) -0.5 µA VCC = -50V, VI = 0V DC Current Gain Gl VO = -5V, IO = -50mA Gain-Bandwidth Product fT 200 MHz VCE = -10V, IE = -5mA, f = 100MHz @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Input Voltage Vl(off) 0.5 V VCC = 5V, IO = 100µA Vl(on) 3.0 V VO = 0.3V, IO = 20mA Output Voltage VO(on) 0.3V V IO/Il = 50mA/2.5mA Input Current Il mA VI = 5V Output Current IO(off) 0.5 µA VCC = 50V, VI = 0V DC Current Gain Gl VO = 5V, IO = 50mA Gain-Bandwidth Product fT 200 MHz VCE = 10V, IE = 5mA, f = 100MHz @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Input Voltage Vl(off) -0.3 V VCC = -5V, IO = -100µA Vl(on) -2.0 V VO = -0.3V, IO = -20mA Output Voltage VO(on) -0.3V V IO/Il = -50mA/-2.5mA Input Current Il -7.2 mA VI = -5V Output Current IO(off) -0.5 µA VCC = -50V, VI = 0V DC Current Gain Gl VO = -5V, IO = -50mA Gain-Bandwidth Product fT 200 MHz VCE = -10V, IE = -5mA, f = 100MHz @ TA = 25°C unless otherwise specified Electrical Characteristics, Switching Diode @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 4) V(BR)R IR = 10µA Forward Voltage (Note 4) VF 0.62 0.72 0.855 1.0 1.25 V IF = 5.0mA IF = 10mA IF = 100mA IF = 150mA Reverse Current (Note 4) IR 2.5 µA µA µA nA VR = 75V VR = 75V, Tj = 150°C VR = 25V, Tj = 150°C VR = 20V Total Capacitance CT 4.0 pF VR = 0, f = 1.0MHz Reverse Recovery Time trr 4.0 ns IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω Notes: 4. Short duration pulse test used to minimize self-heating effect.

DS30573 Rev. 8 - 2 5 of 9 DRD (xxxx) W www.diodes.com 100 100 200 P , POWER DISSIPATION (mW) D T , AMBIENT TEMPERATURE (°C) A Fig. 1, Power Derating Curve (Total Device) 150 200 250 1000 100 0.0001 .001 .01 h , DC CURRENT GAIN FE I , COLLECTOR CURRENT (A) C Fig. 2, Typical DC Current Gain vs Collector Current (DRDN010W) V = 1.0V CE 100 0.1 100 C , OUTPUT CAPACITANCE (pF) OBO V , COLLECTOR-BASE VOLTAGE (V) CB Fig. 3, Output Capacitance vs. Collector-Base Voltage (DRDN010W) f = 1MHz 1000 100 0.0001 .001 .01 V , COLLECTOR-EMITTER CE (SAT) SATURATION VOLTAGE (mV) I , COLLECTOR CURRENT (A) C Fig. 4, Collector Saturation Voltage vs Collector Current (DRDN010W) T C U D O R P W E N Device Characteristics

DS30573 Rev. 8 - 2 6 of 9 DRD (xxxx) W www.diodes.com T C U D O R P W E N I , COLLECTOR-BASE CURRENT (nA) CBO T , AMBIENT TEMPERATURE (ºC) A Fig. 5, Typical Collector-Cutoff Current vs. Ambient Temperature (DRDN005W) 0.01 0.1 100 125 V = 80V CB 1000 10000 100 1000 100 h , DC CURRENT FE GAIN (NORMALIZED) I , COLLECTOR CURRENT (mA) C Fig. 8, DC Current Gain vs Collector Current (DRDN005W) T = -50°C A T = 25°C A T = 150°C A V = 5V CE 100 1000 V , COLLECTOR TO EMITTER CE(SAT) SATURATION VOLTAGE (V) I , COLLECTOR CURRENT (mA) C Fig. 7, Collector Emitter Saturation Voltage vs. Collector Current (DRDN005W) T = 25°C A T = -50°C A T = 150°C A 0.050 0.100 0.150 0.200 0.250 0.300 0.350 0.400 0.450 0.500 IC IB = 10 0.001 0.01 I BASE CURRENT (mA) Fig. 6, Typical Collector Saturation Region (DRDN005W) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 100 V , COLLECTOR EMITTER VOLTAGE (V) CE I = 1mA C I = 10mA C I = 30mA C I = 100mA C 1000 100 f , GAIN BANDWIDTH PRODUCT (MHz) T I , COLLECTOR CURRENT (mA) C Fig. 10, Gain Bandwidth Product vs Collector Current (DRDN005W) V = 5V CE 0.1 0.2 0.1 100 V , BASE EMITTER VOLTAGE (V) BE(ON) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 V = 5V CE I , COLLECTOR CURRENT (mA) C Fig. 9, Base Emitter Voltage vs Collector Current (DRDN005W) T = -50°C A T = 25°C A T = 150°C A

DS30573 Rev. 8 - 2 7 of 9 DRD (xxxx) W www.diodes.com 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 100 V , BASE EMITTER VOLTAGE (V) BE(ON) I , COLLECTOR CURRENT (mA) C Fig. 14, Base Emitter Voltage vs. Collector Current (DRDP006W) V = 5V CE T = 150°C A T = 25°C A T = -50°C A I , BASE CURRENT (mA) B Fig. 12, Typical Collector Saturation Region (DRDP006W) V , COLLECTOR-EMITTER VOLTAGE (V) CE 0.001 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 100 I = 1mA C I = 10mA C I = 30mA C I = 100mA C I = 300mA C 0.1 0.2 0.3 0.6 0.5 0.4 100 1000 I , COLLECTOR CURRENT (mA) C Fig.11, Collector Emitter Saturation Voltage vs. Collector Current (DRDP006W) V , COLLECTOR TO EMITTER CE(SAT) SATURATION VOLTAGE (V) IC IB = 10 T = 150°C A T = 25°C A T = -50°C A T C U D O R P W E N 1000 100 1000 100 h , DC CURRENT FE GAIN (NORMALIZED) I , COLLECTOR CURRENT (mA) C Fig. 13, DC Current Gain vs Collector Current (DRDP006W) V = 5V CE T = 150°C A T = 25°C A T = -50°C A 1000 100 100 f , GAIN BANDWIDTH PRODUCT (MHz) T I , COLLECTOR CURRENT (mA) C Fig. 15, Gain Bandwidth Product vs. Collector Current (DRDP006W) V = 5V CE 1.0 5.0 -0.1 -10 -1.0 -30 C, CAPACITANCE (pF) REVERSE VOLTS (V) Fig. 16, Typical Capacitance (DRDP006W) Cobo Cibo

DS30573 Rev. 8 - 2 8 of 9 DRD (xxxx) W www.diodes.com T C U D O R P W E N 0.5 2.5 1.5 C , TOTAL CAPACITANCE (pF) T V , REVERSE VOLTAGE (V) R Fig. 19, Typical Capacitance vs. Reverse Voltage (Switching Diode) f = 1MHz 0.1 100 1000 10000 100 V , REVERSE VOLTAGE (V) R Fig. 18, Typical Reverse Characteristics (Switching Diode) I , INSTANTANEOUS REVERSE CURRENT (nA) R T = -40ºC A T = 25ºC A T = 75ºC A T = 125ºC A T = 0ºC A 100 1000 0.1 1.6 1.2 0.4 0.8 I , INSTANTANEOUS FORWARD CURRENT (mA) F V , INSTANTANEOUS FORWARD VOLTAGE (V) F Fig. 17, Typical Forward Characteristics (Switching Diode) T = 125ºC A T = -40ºC A T = 75ºC A T = 25ºC A T = 0ºC A

DS30573 Rev. 8 - 2 9 of 9 DRD (xxxx) W www.diodes.com Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code O N D RDxx = Product Type Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September Date Code Key RDxx YM Device Marking Code Packaging Shipping DRDN010W-7 RD01 SOT-363 3000/Tape & Reel DRDN005W-7 RD07 SOT-363 3000/Tape & Reel DRDP006W-7 RD02 SOT-363 3000/Tape & Reel DRDNB16W-7 RD03 SOT-363 3000/Tape & Reel DRDNB26W-7 RD04 SOT-363 3000/Tape & Reel DRDPB16W-7 RD05 SOT-363 3000/Tape & Reel DRDPB26W-7 RD06 SOT-363 3000/Tape & Reel

Ordering Information

(Note 5) T C U D O R P W E N Sample Applications Relay DRDN010W/ DRDN005W RL current sink configuration, bias resistors not included configuration, bias resistors not included Marking Information Relay DRDP006W RL Relay DRDNB16W 1kΩ 10kΩ RL configuration with built-in bias resistors Relay DRDPB26W 220Ω 4.7kΩ RL Relay DRDPB16W 1kΩ 10kΩ RL Relay DRDNB26W 220Ω 4.7kΩ RL configuration with built-in bias resistors (low R1) configuration with built-in bias resistors configuration with built-in bias resistors (low R1) Year 2005 2006 2007 2008 2009 Code S T U V W

Product Information

DRDNB26W-7 specifications and overview.

Summary

COMPLEX ARRAY FOR RELAY DRIVERS DS30573 Rev. 8 - 2

Description

COMPLEX ARRAY FOR RELAY DRIVERS DS30573 Rev. 8 - 2

Source title DRDNB26W-7 Datasheet(PDF) - Diodes Incorporated

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