DRD (XXXX) W (EOL)
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 9
Technical content
Features
Epitaxial Planar Die Construction One Transistor and One Switching Diode in One Package Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Mechanical Data Case: SOT-363 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 8 Ordering Information: See Page 8 Weight: 0.008 grams (approximate) P/N R1 (NOM) R2 (NOM) DRDPB16W DRDNB26W DRDPB26W 220 220 10K 4.7K 4.7K SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 0 8° All Dimensions in mm Maximum Ratings, Total Device @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Power Dissipation (Note 3) PD 200 mW Thermal Resistance, Junction to Ambient Air (Note 3) RJA 625 C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Maximum Ratings, DRDN010W NPN Transistor @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCEO 18 V Emitter-Base Voltage VEBO 5 V Collector Current (Note 3) IC 1000 mA Maximum Ratings, DRDN005W NPN Transistor @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 4.0 V Collector Current – Continuous (Note 3) IC 500 mA Notes: 1. No purposefully added lead. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on page 9 or our website at http://www.diodes.com/datasheets/a p02001.pdf. DRDN010W/ DRDN005W DRDNB26W DRDPB16W/ DRDPB26W A M J LD B C H K F THESE PARTS ARE OBSOLETE. PLEASE CONTACT US.
DRD (XXXX) W Document number: DS46364 Rev. 1 - 4 2 of 9 www.diodes.com February 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. OBSOLETE – PART DISCONTINUED Maximum Ratings, DRDNB26W Pre-Biased NPN Transistor @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Supply Voltage VCC 50 V Input Voltage VIN -5 to +5 V Output Current IC 600 mA Maximum Ratings, DRDPB16W Pre-Biased PNP Transistor @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Supply Voltage VCC -50 V Input Voltage VIN +5 to -10 V Output Current IC 600 mA Maximum Ratings, DRDPB26W Pre-Biased PNP Transistor @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Supply Voltage VCC -50 V Input Voltage VIN +5 to -5 V Output Current IC -600 mA Maximum Ratings, Switching Diode @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 75 V RMS Reverse Voltage VR(RMS) 53 V Forward Continuous Current (Note 3) IFM 500 mA Average Rectified Output Current (Note 3) IO 250 mA Non-Repetitive Peak Forward Surge Current @ t = 1.0s @ t = 1.0s IFSM 4.0 2.0 A
DRD (XXXX) W Document number: DS46364 Rev. 1 - 4 3 of 9 www.diodes.com February 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. OBSOLETE – PART DISCONTINUED Characteristic Symbol Min Max Unit Test Condition DC Current Gain hFE 150 800 IC = 100mA, VCE = 1V Collector-Emitter Saturation Voltage VCE(SAT) 0.5 V IC = 300mA, IB = 30mA Collector-Base Breakdown Voltage V(BR)CBO 45 V IC = 100A, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 18 V IC = 1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE = 100A, IC = 0 Collector Cutoff Current ICBO 1 A VCB = 40V, IE = 0 Emitter Cutoff Current IEBO 1 A VEB = 4V, IC = 0 Current Gain-Bandwidth Product fT 100 MHz VCE = 10V, IC = 50mA, f = 100MHz Capacitance Cobo 8 pF VCB = 10V, IE = 0, f = 1MHz Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 80 V IC = 100A, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 80 V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 4.0 V IE = 100A, IC = 0 Collector Cutoff Current ICBO 100 nA VCB = 60V, IE = 0 VCB = 80V, IE = 0 Collector Cutoff Current ICES 100 nA VCE = 60V, IBO = 0V VCE = 80V, IBO = 0V DC Current Gain hFE 100 IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) 0.25 V IC = 100mA, IB = 10mA Base-Emitter Saturation Voltage VBE(SAT) 1.2 V IC = 100mA, VCE = 1.0V Current Gain-Bandwidth Product fT 100 MHz VCE = 2.0V, IC = 10mA, f = 100MHz
DRD (XXXX) W Document number: DS46364 Rev. 1 - 4 4 of 9 www.diodes.com February 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. OBSOLETE – PART DISCONTINUED Characteristic Symbol Min Typ Max Unit Test Condition Input Voltage Vl(off) 0.5 V VCC = 5V, IO = 100A Vl(on) 3.0 V VO = 0.3V, IO = 20mA Output Voltage VO(on) 0.3V V IO/Il = 50mA/2.5mA Input Current Il 28 mA VI = 5V Output Current IO(off) 0.5 A VCC = 50V, VI = 0V DC Current Gain Gl 47 VO = 5V, IO = 50mA Gain-Bandwidth Product fT 200 MHz VCE = 10V, IE = 5mA, f = 100MHz Characteristic Symbol Min Typ Max Unit Test Condition Input Voltage Vl(off) -0.3 V VCC = -5V, IO = -100A Vl(on) -2.0 V VO = -0.3V, IO = -20mA Output Voltage VO(on) -0.3V V IO/Il = -50mA/-2.5mA Input Current Il -7.2 mA VI = -5V Output Current IO(off) -0.5 A VCC = -50V, VI = 0V DC Current Gain Gl 56 VO = -5V, IO = -50mA Gain-Bandwidth Product fT 200 MHz VCE = -10V, IE = -5mA, f = 100MHz Characteristic Symbol Min Typ Max Unit Test Condition Input Voltage Vl(off) -0.5 V VCC = -5V, IO = -100A Vl(on) -3.0 V VO = -0.3V, IO = -20mA Output Voltage VO(on) -0.3V V IO/Il = -50mA/-2.5mA Input Current Il -28 mA VI = -5V Output Current IO(off) -0.5 A VCC = -50V, VI = 0V DC Current Gain Gl 47 VO = -5V, IO = -50mA Gain-Bandwidth Product fT 200 MHz VCE = -10V, IE = -5mA, f = 100MHz Electrical Characteristics, Switching Diode @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 4) V(BR)R 75 IR = 10A Forward Voltage VF 0.62 0.72 0.855 1.0 1.25 V IF = 5.0mA IF = 10mA IF = 100mA IF = 150mA Reverse Current (Note 4) IR 2.5 nA VR = 75V VR = 75V, TJ = 150C VR = 25V, TJ = 150C VR = 20V Total Capacitance CT 4.0 pF VR = 0, f = 1.0MHz Reverse Recovery Time trr 4.0 ns IF = IR = 10mA, Irr = 0.1 x IR, RL = 100 Notes: 4. Short duration pulse test used to minimize self -heating effect.
DRD (XXXX) W Document number: DS46364 Rev. 1 - 4 5 of 9 www.diodes.com February 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. OBSOLETE – PART DISCONTINUED 100 40 200 P , POWER DISSIPATION (mW)D T , AMBIENT TEMPERATURE (°C) Fig. 1, Power Derating Curve (Total Device) A 150 200 250 0 80 120 160 R = 625°C/WJA 1,000 100 0.0001 0.001 0.01 1 100.1 h , DC CURRENT GAINFE I , COLLECTOR CURRENT (A) Fig. 2, Typical DC Current Gain vs. Collector Current (DRDN010W) C V = 1.0VCE 100 0.1 1 10 100 C , OUTPUT CAPACITANCE (pF)OBO V , COLLECTOR-BASE VOLTAGE (V) Fig. 3, Typical Output Capacitance vs. Collector-Base Voltage (DRDN010W) CB f = 1MHz 1,000 100 0.0001 0.001 0.01 0.1 1 10 V , COLLECTOR-EMITTER SATURATION VOLTAGE (mV) CE (SAT) I , COLLECTOR CURRENT (A) Fig. 4, Typical Collector Saturation Voltage vs. Collector Current (DRDN010W) C Device Characteristics I , COLLECTOR-BASE CURRENT (nA)CBO T , AMBIENT TEMPERATURE (ºC) Fig. 5, Typical Collector-Cutoff Current vs. Ambient Temperature (DRDN005W) A 0.01 0.1 25 50 75 100 125 0.001 0.01 I BASE CURRENT (mA) Fig. 6, Typical Collector Saturation Region (DRDN005W) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 10 100 V , COLLECTOR EMITTER VOLTAGE (V)CE I = 1mAC I = 10mAC I = 30mAC I = 100mAC
DRD (XXXX) W Document number: DS46364 Rev. 1 - 4 6 of 9 www.diodes.com February 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. OBSOLETE – PART DISCONTINUED 1 10 100 1,000 V , COLLECTOR-EMITTER SATURATION VOLTAGE (V) CE(SAT) I , COLLECTOR CURRENT (mA) Fig. 7, Typical Collector-Emitter Saturation Voltage vs. Collector Current (DRDN005W) C T = 25°CA T = -50°CA T = 150°CA 0.050 0.100 0.150 0.200 0.250 0.300 0.350 0.400 0.450 0.500 I I C B = 10 1,000 10,000 100 1 10 1,000100 h , DC CURRENT GAIN FE I , COLLECTOR CURRENT (mA) Fig. 8, Typical DC Current Gain vs. Collector Current (DRDN005W) C T = -50°CA T = 25°CA T = 150°CA V = 5VCE 0.1 0.2 0.1 1 10 100 V , BASE-EMITTER ON VOLTAGE (V)BE(ON) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 V = 5VCE I , COLLECTOR CURRENT (mA) Fig. 9, Typical Base-Emitter On Voltage vs. Collector Current (DRDN005W) C T = -50°CA T = 25°CA T = 150°CA 1,000 100 1 10 f , GAIN BANDWIDTH PRODUCT (MHz)T I , COLLECTOR CURRENT (mA) Fig. 10, Typical Gain Bandwidth Product vs. Collector Current (DRDN005W) C 0.5 2.5 1.5 0 10 20 4030 C , TOTAL CAPACITANCE (pF)T V , REVERSE VOLTAGE (V) Fig. 19, Typical Capacitance vs. Reverse Voltage (Switching Diode) R f = 1MHz VR, REVERSE VOLTAGE (V) Fig. 11, Typical Capacitance vs. Reverse Voltage (Switching Diode)
DRD (XXXX) W Document number: DS46364 Rev. 1 - 4 7 of 9 www.diodes.com February 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. OBSOLETE – PART DISCONTINUED Ordering Information (Note 5) Device Packaging Shipping DRDN010W-7 SOT-363 3000/Tape & Reel DRDNB26W-7 SOT-363 3000/Tape & Reel DRDPB16W-7 SOT-363 3000/Tape & Reel DRDPB26W-7 SOT-363 3000/Tape & Reel DRDN005W-7 SOT-363 3000/Tape & Reel Marking Information Date Code Key Year 2005 2006 2007 2008 2009 2010 2011 2012 Code S T U V W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D RDxx = Product Type Marking Code: RD01 = DRDN010W RD04 = DRDNB26W RD05 = DRDPB16W RD06 = DRDPB26W RD07 = DRDN005W YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September R D xx YM
DRD (XXXX) W Document number: DS46364 Rev. 1 - 4 8 of 9 www.diodes.com February 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. OBSOLETE – PART DISCONTINUED Sample Applications Suggested Pad Layout Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65 sink configuration, bias resistors not included configuration with built-in bias resistors (low R1) configuration with built-in bias resistors configuration with built-in bias resistors (low R1) Relay DRDPB26W 220 4.7k RL Relay DRDPB16W 1k 10k RL Relay DRDNB26W 220 4.7k RL Relay DRDN010W/ DRDN005W R2 RL X Z Y C EE G
DRD (XXXX) W Document number: DS46364 Rev. 1 - 4 9 of 9 www.diodes.com February 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. OBSOLETE – PART DISCONTINUED IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informat ional purpose only and is provided only to illustrate the operation of Diodes’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. 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