DMZ6005E KEXIN | Alldatasheet
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Technical content
www.kexin.com.cn 1 MOSFET N-Channel MOSFET DMZ6005E (KMZ6005E) 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 600 Drain-Gate Voltage[ VDG 600 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 20 Pulsed Drain Current IDM 80 Power Dissipation PD 500 mW Thermal Resistance.Junction- to-Ambient RthJA 250 ℃/W Soldering Temperature TL 300 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V mA ■ Features
- VDS (V) = 600V
- ID = 20mA
- RDS(ON) ＜ 700mΩ (VGS = 0 V)
- Fast Switching Speed
- RoHS Compliant
- Halogen-free available
www.kexin.com.cn2 MOSFET N-Channel MOSFET DMZ6005E (KMZ6005E) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=-5V 600 V Saturated Drain-to-Source Current IDSS VGS=0V, VDS=25V 5 25 mA VDS=600V, VGS=-5V VDS=600V, VGS=-5V ,TJ = 125℃ Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±20 Gate-to-Source Cut-off Voltage VGS(OFF) VDS=3V , ID=8 uA -3 -1.8 V Static Drain-Source On-Resistance RDS(On) VGS=0V, ID=3mA 700 Ω Forward Transconductance gFS VDS=10V, ID=5mA 15.4 mS Input Capacitance Ciss 12.3 Output Capacitance Coss 2.6 Reverse Transfer Capacitance Crss 1.8 Total Gate Charge Qg 1.55 Gate Source Charge Qgs 0.12 Gate Drain Charge Qgd 0.56 Turn-On DelayTime td(on) 4 Turn-On Rise Time tr 9 Turn-Off DelayTime td(off) 14 Turn-Off Fall Time tf 84 Diode Forward Voltage VSD IS=3mA,VGS=-10V 1.2 V pF nC ID(OFF) Drain-to-Source Leakage Current uA ns VGS = -5V~5V VDD = 300V, ID=7mA RG = 20Ω VGS=-5V, VDS=25V, f=1MHz VGS=-5~5V, VDS=300V, ID=7mA ■ Marking Marking 605E 0.1 Note.: Pulse width≤380μs; duty cycle≤2%.