DMWSH120H28SM4Q
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 7
Technical content
Document number: DS45710 Rev. 6 - 2 1 of 7 www.diodes.com January 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. DMWSH120H28SM4Q 1200V N-CHANNEL SILICON CARBIDE POWER MOSFET Product Summary BVDSS RDS(ON) Max ID TC = +25°C 1200V 28.5mΩ @VGS = 15V 100A Description and Applications This SiC MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high - efficiency power-management applications. EV high-power DC-DC converters EV charging systems AC-DC traction inverters Automotive motor drivers Features and Benefits Low On-Resistance High BVDSS Rating for Power Application Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMWSH120H28SM4Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Mechanical Data Package: TO247-4 Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 6.6 grams (Approximate) Ordering Information (Note 4) Part Number Package Packing Qty. Carrier DMWSH120H28SM4Q TO247-4 Standard 30 Pieces Tube Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information TO247-4 Standard Pin Configuration Internal Schematic = Manufacturer’s Marking 120H28SM4 = Product Type Marking Code YYWW or YYWW = Date Code Marking YY or YY = Last Two Digits of Year (ex: 24 = 2024) WW or WW = Week Code (01 to 53) Top View Bottom View Green D G K S D D S K G D S K (Driver Source) G G TO247-4 Standard 120H28SM4 YYWW
Document number: DS45710 Rev. 6 - 2 2 of 7 www.diodes.com January 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. DMWSH120H28SM4Q Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 1200 V Gate-Source Voltage (Dynamic) VGSS +19/-8 V Gate-Source Voltage (Static) VGSS +15/-4 V Continuous Drain Current (Notes 5, 9) TC = +25° C TC = +100° C ID 100 70.8 A Continuous Diode Forward Current (Note 5) IS 87 A Pulsed Source Current (10µ s Pulse, Duty Cycle = 1%) (Note 5) ISM 430 A Pulsed Drain Current (10µ s Pulse, Duty Cycle = 1%) (Note 5) IDM 430 A Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TC = +25° C PD 429 W TC = +100° C 214 Thermal Resistance, Junction to Ambient (Note 6) RθJA 28.8 ° C/W Thermal Resistance, Junction to Case (Note 5) RθJC 0.35 Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 1200 — — V VGS = 0, ID = 100µA Zero Gate Voltage Drain Current IDSS — — 50 µA VDS = 1200V, VGS = 0 Gate-Source Leakage IGSS — — ±250 nA VGS = +15/-4V, VDS = 0 ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) 1.8 2.5 3.6 V VDS = VGS, ID = 17.7mA Static Drain-Source On-Resistance RDS(ON) — 20 28.5 mΩ VGS = 15V, ID = 50A Diode Forward Voltage VSD — 3.8 — V VGS = -4V, IS = 25A Transconductance gfs — 15 — S VDS = 20V, ID = 50A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss — 3944 — pF VGS = 0, VDS = 1000V, VAC = 25mV, f = 1MHz Output Capacitance Coss — 180 — Reverse Transfer Capacitance Crss — 9.73 — Coss Stored Energy Eoss — 114.6 — µJ Turn-On Switching Energy (Body Diode Forward) EON — 744 — µJ VGS = -4V/+15V, VDS = 800V, Rg = 5Ω, ID = 50A, L = 157µH Turn-Off Switching Energy (Body Diode Forward) EOFF — 367 — Gate Resistance Rg — 1.3 — Ω VAC = 25mV, f = 1MHz Total Gate Charge Qg — 173.7 — nC VGS = -4V/+15V, VDS = 800V, ID = 50A Gate-Source Charge Qgs — 51.9 — Gate-Drain Charge Qgd — 56.4 — Turn-On Delay Time tD(ON) — 23.83 — ns VGS = -4V/+15V, VDD = 800V, Rg = 5Ω, Inductive Load Turn-On Rise Time tR — 40.06 — Turn-Off Delay Time tD(OFF) — 48.00 — Turn-Off Fall Time tF — 12.52 — Body Diode Reverse-Recovery Time tRR — 23.13 — ns VGS = -4V, VDS = 800V, ID = 50A, di/dt = 2600A/µs Body Diode Reverse-Recovery Charge QRR — 423.9 — nC Body Diode Reverse-Recovery Current IRRM — 30.12 — A Notes: 5. Device mounted on an infinite heatsink. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout . 7. Guaranteed by design. Not subject to production testing . 8. Short duration pulse test used to minimize self-heating effect. 9. Drain current limited by maximum junction temperature.
© 2024 Copyright Diodes Incorporated. All Rights Reserved. Figure 13. Transient Thermal Resistance
Document number: DS45710 Rev. 6 - 2 6 of 7 www.diodes.com January 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. DMWSH120H28SM4Q Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TO247-4 Standard TO247-4 Standard Dim Min Max A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.07 1.33 b1 2.39 2.94 b3 1.07 1.60 b5 2.39 2.69 c 0.55 0.68 D 23.30 23.60 D1 16.25 17.65 D2 0.95 1.25 E 15.75 16.30 E1 13.10 14.15 E2 3.68 5.10 E3 1.00 1.90 E4 12.38 13.43 e 2.54 BSC e1 5.08 BSC L 17.31 17.82 L1 3.97 4.37 L2 2.35 2.65 ØP 3.51 3.65 Q 5.49 6.00 S 6.04 6.30 θ 17.5°- 20° REF θ1 3.5°- 5° REF θ2 4°- 5° REF All Dimensions in mm 7.18 D2E4 b( 4x) L C D SQ E E3 A2 A 0102 c A1 b1 b3( 3x) ( 8.38) ( 6.35) ( 11.3) ) A ee1 B ( 1.95) OPTION A (TOP VIEW) OPTION B (TOP VIEW)
Document number: DS45710 Rev. 6 - 2 7 of 7 www.diodes.com January 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. DMWSH120H28SM4Q IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICUL AR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as sa fety and functional- safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality con trol techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. 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