DMV1500

DMV1500M STMICROELECTRONICS | Alldatasheet

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Technical content

DMV1500M® July 2001 - Ed: 6A DAMPER + MODULATION DIODE FOR VIDEO Symbol Parameter Value Unit MODUL DAMPER VRRM Repetitive peak reverse voltage 600 1500 V IFSM Surge non repetitive forward current tp = 10 ms sinusoidal35 75 A Tstg Storage temperature range -4 0t o+1 5 0 ° C Tj Maximum operating junction temperature 150 ABSOLUTE RATINGS (limiting values, per diode) Insulated TO-220AB (Bending option F5 available) n Full kit in one package n High breakdown voltage capability n Very fast recovery diode n Specified turn on switching characteristics n Low static and peak forward voltage drop for low dissipation n Insulated version: Insulated voltage = 2500 V RMS Capacitance = 7 pF n Planar technology allowing high quality and best electrical characteristics n Outstanding performance of well proven DTV as damper and new faster Turbo 2 600V technology as modulation FEATURES AND BENEFITS High voltage semiconductor especially designed for horizontal deflection stage in standard and high resolution video display with E/W correction. The insulated TO-220AB package includes both the DAMPER diode and the MODULATION diode. Assembled on automated line, it offers excellent insulating and dissipating characteristics, thanks to the internal ceramic insulation layer.

DESCRIPTION

I F(AV) 3A 6A VRRM 600 V 1500 V trr(max) 50 ns 135 ns VF (max) 1.4 V 1.65 V MAIN PRODUCT CHARACTERISTICS 1 2 3 DAMPER MODULATION 123

Symbol Parameter Value Unit R th(j-c) Damper junction to case 4.8 °C/W R th(j-c) Modulation junction to case 6 THERMAL RESISTANCES Symbol Parameter Test conditions Value UnitTj = 25°C Tj = 125°C Typ. Max. Typ. Max. VF * Forward voltage drop IF =6A 1.4 2.2 1.2 1.65 V IR ** Reverse leakage current VR = 1500V 100 100 1000 µA Pulse test : * tp = 380µs,δ <2 % **tp = 5 ms,δ <2 % To evaluate the maximum conduction losses of the DAMPER diode use the following equations : P=1 . 3 7xIF(AV)+ 0.047 x IF2(RMS) STATIC ELECTRICAL CHARACTERISTICS OF THE DAMPER DIODES Symbol Parameter Test conditions Value UnitTj = 25°C Tj = 125°C Typ. Max. Typ. Max. VF * Forward voltage drop IF =3 A 1.8 1.1 1.4 V IR ** Reverse leakage current VR = 600V 2 035 0 µA Pulse test : * tp = 380µs,δ <2 % ** tp = 5 ms,δ <2 % To evaluate the maximum conduction losses of the MODULATION diode use the following equations : P=1 . 1 2xIF(AV)+ 0.092 x IF2(RMS) STATIC ELECTRICAL CHARACTERISTICS OF THE MODULATION DIODE Symbol Parameter Test conditions Value UnitTyp. Max. trr Reverse recovery time I F = 100mA IR = 100mA IRR = 10mA Tj = 25°C 750 ns trr Reverse recovery time I F =1 A dIF/dt = -50A/µs VR = 30V Tj = 25°C 110 135 ns RECOVERY CHARACTERISTICS OF THE DAMPER DIODE

Symbol Parameter Test conditions Value UnitTyp. Max. tfr Forward recovery time IF =6 A dIF/dt = 80A/µs VFR =3 V Tj = 100°C 570 ns VFP Peak forward voltage IF =6 A dIF/dt = 80A/µs Tj = 100°C 21 28 V TURN-ON SWITCHING CHARACTERISTICS OF THE DAMPER DIODE Symbol Parameter Test conditions Value UnitTyp. Max. trr Reverse recovery time IF = 100mA IR = 100mA IRR = 10mA Tj = 25°C 110 350 ns trr Reverse recovery time IF =1 A dIF/dt = -50A/µs VR = 30V Tj = 25°C 50 ns RECOVERY CHARACTERISTICS OF THE MODULATION DIODE Symbol Parameter Test conditions Value UnitTyp. Max. tfr Forward recovery time IF =3 A dIF/dt = 80A/µs VFR =2 V Tj = 100°C 240 ns VFP Peak forward voltage IF =3 A dIF/dt = 80A/µs Tj = 100°C 8V TURN-ON SWITCHING CHARACTERISTICS OF THE MODULATION DIODE

01234560.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Ip(A) PF(av)(W) Fig. 1-1:Power dissipation versus peak forward current (triangular waveform,δ = 0.45) (damper diode). 01234560.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Ip(A) PF(av)(W) Fig. 1-2:Power dissipation versus peak forward current (triangular waveform,δ = 0.45) (modula- tion diode). 0 25 50 75 100 125 1500 Tamb(°C) IF(av)(A) Rth(j-a)=Rth(j-c) T δ=tp/T tp Fig. 2-1:Average forward current versus ambient temperature (damper diode). 0 25 50 75 100 125 1500.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Tamb(°C) IF(av)(A) Rth(j-a)=Rth(j-c) T δ=tp/T tp Fig. 2-2:Average forward current versus ambient temperature (modulation diode). 5.0 10.0 15.0 VFM(V) IFM(A) Maximum Tj=25°C Typical Tj=125°C Maximum Tj=125°C Fig. 3-1:Forward voltage drop versus forward current (damper diode). 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VFM(V) IFM(A) Typical Tj=125°C Maximum Tj=25°C Maximum Tj=125°C Fig. 3-2:Forward voltage drop versus forward current (modulation diode).

1E-3 1E-2 1E-1 1E+00.1 0.2 0.5 1.0 tp(s) K=[Zth(j-c)/Rth(j-c)] Single pulse δ = 0.1 δ = 0.2 δ = 0.5 T δ=tp/T tp Fig. 4:Relative variation of thermal impedance junction to case versus pulse duration. 1E-3 1E-2 1E-1 1E+00 t(s) IM(A) Tc=100°C IM t δ=0.5 Fig. 5-1:Non repetitive surge peak forward current versus overload duration (damper diode). 1E-3 1E-2 1E-1 1E+00 t(s) IM(A) Tc=100°C IM t δ=0.5 Fig. 5-2:Non repetitive surge peak forward current versus overload duration (modulation diode). 100 200 300 400 500 600 700 800 900 1000 dIF/dt(A/µs) Qrr(nc) IF= 6A 90% confidence Tj=125°C Fig. 6-1:Reverse recovery charges versus dIF/dt (damper diode). 0.1 1.0 10.0 100.00 100 150 200 dIF/dt(A/µs) Qrr(nC) IF= 3A 90% confidence Tj=125°C Fig. 6-2:Reverse recovery charges versus dIF/dt (modulation diode). 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 dIF/dt(A/µs) IRM(A) IF= 6A 90% confidence Tj=125°C Fig. 7-1:Reverse recovery current versus dIF/dt (damper diode).

dIF/dt(A/µs) IRM(A) IF= 3A 90% confidence Tj=125°C Fig. 7-2:Reverse recovery current versus dIF/dt (modulation diode). 0 20 40 60 80 100 120 1400 dIF/dt(A/µs) VFP(V) IF= 6A 90% confidence Tj=125°C Fig. 8-1:Transient peak forward voltage versus dIF/dt (damper diode). 0 20 40 60 80 100 120 140 160 180 2000 dIF/dt(A/µs) VFP(V) IF= 3A 90% confidence Tj=125°C Fig. 8-2:Transient peak forward voltage versus dIF/dt (modulation diode). 0 20 40 60 80 100 120 140400 450 500 550 600 650 700 750 800 dIF/dt(A/µs) tfr(ns) IF= 6A 90% confidence Tj=125°C VFR=3V Fig. 9-1:Forward recovery time versus dIF/dt (damper diode). 0 20 40 60 80 100 120 140 160 180 2000 100 125 150 175 200 dIF/dt(A/µs) tfr(ns) IF=IF(av) 90% confidence Tj=125°C Vfr=2V Fig. 9-2:Forward recovery time versus dIF/dt (modulation diode). VFP IRM Qrr 0 20 40 60 80 100 120 1400.0 0.2 0.4 0.6 0.8 1.0 1.2 Tj(°C) VFP,IRM,Qrr[Tj]/VFP,IRM,Qrr[Tj=125°C] Fig. 10:Dynamic parameters versus junction tem- perature (damper & modulation diodes).

® 7/9 DMV1500M DMV1500M / F5 DAMPER AND MODULATION DIODES FOR VIDEO LEAD BENDING (OPTION)

ORDERING INFORMATION

VR(V) C(pF) Tj=25°C F=1MHz Fig. 11:Junction capacitance versus reverse voltage applied (typical values) (damper & modulation di- odes).

REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 15.20 15.90 0.598 0.625 a1 24.16 26.90 0.951 1.059 a3 1.65 2.41 0.064 0.094 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 F 6.20 6.60 0.244 0.259 I 3.75 3.85 0.147 0.151 L 2.65 2.95 0.104 0.116 I2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 l4 15.80 16.80 0.622 0.661 16.40 typ. 0.645 typ. M1 2.92 3.30 0.114 0.129 R1 1.40 typ. 0.055 typ. R2 1.40 typ. 0.055 typ. B C c2 a3R2 A F L I e Ø n Cooling method: by conduction (c) n Recommended torque value: 0.8 m.N. n Maximum torque value: 1 m.N. 2.2mm 2.54mm 1mm 3.1mm PRINTED CIRCUIT LAYOUT FOR F5 LAYOUT

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com Type Marking Package Weight Base qty Delivery mode DMV1500M DMV1500MF5 DMV1500M TO-220AB 2.2 g. 50 Tube n Epoxy meets UL94, V0 PACKAGE MECHANICAL DATA TO-220AB M B C A F L I e REF. DIMENSIONS Millimeters Inches A 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 F 6.20 6.60 0.244 0.259 I 3.75 3.85 0.147 0.151 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 M 2.60 0.102 n Cooling method: by conduction (c) n Recommended torque value: 0.8 m.N. n Maximum torque value: 1 m.N.