DMTH4011SPDQ DIODES | Alldatasheet
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Document number: DS39465 Rev. 3 - 2 1 of 7 www.diodes.com January 2018 © Diodes Incorporated DMTH4011SPDQ 40V 175° C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) max ID max TC = +25° C 40V 15mΩ @ VGS = 10V 42A Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC -Q101, supported by a PPAP and is ideal for use in: Backlighting Power Management Functions DC-DC Converters Features and Benefits Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching – Ensures More Reli able and Robust End Application High Conversion Efficiency Low RDS(ON) – Minimizes On State Losses Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Case: PowerDI®5060-8 (Type C) Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) Ordering Information (Note 5) Part Number Case Packaging DMTH4011SPDQ-13 PowerDI5060-8 (Type C) 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen and Antimony free "Green” products are defined as those whic h contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Pin Out Top View Equivalent Circuit = Manufacturer’s Marking TH4011SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 18 = 2018) WW = Week (01 to 53) Bottom View Top View Pin1 G1 S2 G2 D1 D2 D2 TH4011SD YY WW PowerDI is a registered trademark of Diodes Incorporated.
Document number: DS39465 Rev. 3 - 2 2 of 7 www.diodes.com January 2018 © Diodes Incorporated DMTH4011SPDQ Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 7) TC = +25° C TC = +100° C ID 42 29.7 A Continuous Drain Current (Note 6) TA = +25° C TA = +100°C ID 11.1 7.8 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 60 A Maximum Continuous Body Diode Forward Current (Note 7) IS 3.3 A Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%) ISM 60 A Avalanche Current, L = 0.3mH IAS 11.9 A Avalanche Energy, L = 0.3mH EAS 21.4 mJ Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) TA = +25°C PD 2.6 W Thermal Resistance, Junction to Ambient (Note 6) RθJA 57 ° C/W Total Power Dissipation (Note 7) TC = +25°C PD 37.5 W Thermal Resistance, Junction to Case (Note 7) RθJC 4 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 40 — — V VGS = 0V, ID = 1mA Zero Gate Voltage Drain Current IDSS — — 1 µA VDS = 32V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) 2 — 4 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 11.6 15 mΩ VGS = 10V, ID = 20A Diode Forward Voltage VSD — — 1.2 V VGS = 0V, IS = 20A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 805 — pF VDS = 20V, VGS = 0V, f = 1MHz Output Capacitance Coss — 208 — pF Reverse Transfer Capacitance Crss — 15 — pF Gate Resistance Rg — 2.76 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg — 10.6 — nC VDS = 20V, ID = 20A, VGS = 10V Gate-Source Charge Qgs — 2.2 — nC Gate-Drain Charge Qgd — 2.7 — nC Turn-On Delay Time tD(ON) — 4.1 — ns VDD = 20V, VGS = 10V, RG = 1.6Ω, ID = 20A Turn-On Rise Time tR — 3.8 — ns Turn-Off Delay Time tD(OFF) — 8.6 — ns Turn-Off Fall Time tF — 1.9 — ns Body Diode Reverse Recovery Time tRR — 10.2 — ns IF = 15A, di/dt = 400A/μs Body Diode Reverse Recovery Charge QRR — 9.6 — nC Notes: 6. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing.
Figure 13. Transient Thermal Resistance
Document number: DS39465 Rev. 3 - 2 6 of 7 www.diodes.com January 2018 © Diodes Incorporated DMTH4011SPDQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 (Type C) Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 (Type C) DETAIL A 0(4x) Seating Plane c e 01(4x) D E y x Ø 1.000 Depth 0.07± 0.030 A DETAIL A L k M La b(8x) e/2 b1(8x) b2(2x) X C Y(4x) G X2X3 PowerDI5060-8 (Type C) Dim Min Max Typ A 0.90 1.10 1.00 A1 0 0.05 0.02 b 0.33 0.51 0.41 b1 0.300 0.366 0.333 b2 0.20 0.35 0.25 c 0.23 0.33 0.277 D 5.15 BSC D1 4.85 4.95 4.90 D2 1.40 1.60 1.50 D3 - - 3.98 E 6.15 BSC E1 5.75 5.85 5.80 E2 3.56 3.76 3.66 e 1.27BSC k - - 1.27 k1 0.56 - - L 0.51 0.71 0.61 La 0.51 0.71 0.61 L1 0.05 0.20 0.175 L4 - - 0.125 M 3.50 3.71 3.605 x - - 1.400 y - - 1.900 θ 10° 12° 11° θ1 6° 8° 7° All Dimensions in mm Dimensions Value (in mm) C 1.270 G 0.660 G1 0.820 X 0.610 X1 3.910 X2 1.650 X3 1.650 X4 4.420 Y 1.270 Y1 1.020 Y2 3.810 Y3 6.610
Document number: DS39465 Rev. 3 - 2 7 of 7 www.diodes.com January 2018 © Diodes Incorporated DMTH4011SPDQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product name s and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this docu ment is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Furthe r, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2018, Diodes Incorporated www.diodes.com