DMTH3004LPSQ DIODES | Alldatasheet

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PowerDI is a registered trademark of Diodes Incorporated. DMTH3004LPSQ Document number: DS38443 Rev. 1 - 2 1 of 7 www.diodes.com December 2015 © Diodes Incorporated DMTH3004LPSQ NEW PRODUCT ADVANCE INFORMATION 30V 175° C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary BVDSS RDS(ON) Max ID Max TC = +25°C 30V 3.8mΩ @ VGS = 10V 145A 6mΩ @ VGS = 4.5V 115A Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC -Q101, supported by a PPAP and is ideal for use in:  Backlighting  Power Management Functions  DC-DC Converters Features and Benefits  Low RDS(ON) – Minimizes On-State Losses  Excellent Qgd x RDS(ON) Product (FOM)  Small Form Factor Thermally Efficient Package Enables Higher Density End Products  100% Unclamped Inductive Switching – Ensures More Reliability  Rated to +175° C – Ideal for High Ambient Temperature Environments  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Mechanical Data  Case: POWERDI®5060-8  Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections Indicator: See Diagram  Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.097 grams (Approximate) Ordering Information (Note 5) Part Number Case Packaging DMTH3004LPSQ-13 POWERDI®5060-8 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900 ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information Bottom View Top View Pin Configuration Top View Internal Schematic POWERDI®5060-8 Pin1 Green S D S S G D D D H3004LS YY WW = Manufacturer’s Marking H3004LS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 15 = 2015) WW = Week (01 to 53) S D D G D D S S

PowerDI is a registered trademark of Diodes Incorporated. DMTH3004LPSQ Document number: DS38443 Rev. 1 - 2 2 of 7 www.diodes.com December 2015 © Diodes Incorporated DMTH3004LPSQ NEW PRODUCT ADVANCE INFORMATION Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS +20 -16 V Continuous Drain Current (Note 6) TA = +25°C TA = +100°C ID 22 16 A Continuous Drain Current (Note 7) TC = +25°C TC = +100°C ID 145 103 A Maximum Continuous Body Diode Forward Current IS 100 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 180 A Avalanche Current, L=0.3mH IAS 27 A Avalanche Energy, L=0.3mH EAS 110 mJ Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation PD 136 W Thermal Resistance, Junction to Ambient (Note 6) RθJA 47 ° C/W Thermal Resistance, Junction to Case (Note 7) RθJC 1.1 Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS — — 1 μA VDS = 24V, VGS = 0V Zero Gate Voltage Drain Current (Note 9) IDSS — — 10 μA VDS = 24V, VGS = 0V TJ = +125° C Gate-Source Leakage IGSS — — ±100 nA VGS = +20V, VDS = 0V VGS = -16V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) 1 1.6 3 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 3.3 3.8 mΩ VGS = 10V, ID = 20A — 5 6 VGS = 4.5V, ID = 7A Diode Forward Voltage VSD — 0.70 1 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS Input Capacitance (Note 9) Ciss — 2370 — pF VDS = 15V, VGS = 0V, f = 1MHz Output Capacitance (Note 9) Coss — 1360 — Reverse Transfer Capacitance (Note 9) Crss — 240 — Gate Resistance Rg 0.14 0.7 1.75 Ω VDS = 0V, VGS = 0V, f = 1MHz SWITCHING CHARACTERISTICS (Note 9) Total Gate Charge (VGS = 10V) Qg — 43.7 — nC VDS = 15V, ID = 20A Gate-Source Charge Qgs — 6.9 — Gate-Drain Charge Qgd — 8 — Turn-On Delay Time tD(ON) — 6.2 — ns VDD = 15V, VGS = 10V, RG = 3Ω, RL = 0.75Ω Turn-On Rise Time tR — 4.2 — Turn-Off Delay Time tD(OFF) — 21 — Turn-Off Fall Time tF — 8 — Body Diode Reverse Recovery Time tRR — 25 — ns IF = 15A, dI/dt = 500A/μs Body Diode Reverse Recovery Charge QRR — 37 — nC Notes: 6. Device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single - sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady state. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing.

PowerDI is a registered trademark of Diodes Incorporated. Figure 13. Transient Thermal Resistance

PowerDI is a registered trademark of Diodes Incorporated. DMTH3004LPSQ Document number: DS38443 Rev. 1 - 2 6 of 7 www.diodes.com December 2015 © Diodes Incorporated DMTH3004LPSQ NEW PRODUCT ADVANCE INFORMATION Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. POWERDI®5060-8 POWERDI®5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05  b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51   L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 Θ 10º 12º 11º Θ1 6º 8º 7º All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. POWERDI®5060-8 Dimensions Value (in mm) C 1.270 G 0.660 G1 0.820 X 0.610 X1 4.100 X2 0.755 X3 4.420 X4 5.610 Y 1.270 Y1 0.600 Y2 1.020 Y3 0.295 Y4 1.825 Y5 3.810 Y6 0.180 Y7 6.610 A L K M G Detail A 0(4X) c e D E Detail A b (8X) e/2 01 (4X) b2 (4X) b3 (4X)E3 X3 Y2 X C Y(4x) G

PowerDI is a registered trademark of Diodes Incorporated. DMTH3004LPSQ Document number: DS38443 Rev. 1 - 2 7 of 7 www.diodes.com December 2015 © Diodes Incorporated DMTH3004LPSQ NEW PRODUCT ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of th is document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, internation al or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into mul tiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems witho ut the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be p rovided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com