6N60 DYELEC | Alldatasheet

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1 / 8May.2015-REV.00 www.dyelec.com 1. Gate 2. Drain 3. Source Pin Definition: PRODUCT SUMMARY VDS (V) RDS(on)(Ω)Current(A) 600 1.5 @ VGS =10V 6 600V N-Channel Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) RDS(ON)<1.5Ω @ VGS=10V Fast switching capability Low gate charge Lead free in compliance with EU RoHS directive. Green molding compound Block Diagram

Ordering Information

  • Case: TO-220,ITO-220,TO-262,TO-263 Package D G S PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 6 A Continuous Drain Current ID 6 A Pulsed Drain Current (Note 2) IDM 24.8 A Avalanche Energy Single Pulsed (Note 3) E AS 440 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 ns Power Dissipation TO-220/TO-262/TO-263 PD 125 W ITO-220 42 W TO-251/TO-252 55 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 25mH, IAS = 6A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 6.2A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C Part No. Package Packing DMT6N60-TU TO-220 50pcs / Tube DMF6N60-TU ITO-220 50pcs / Tube DMK6N60-TU TO-262 50pcs / Tube DMG6N60-TU TO-263 50pcs / Tube DMG6N60-TR TO-263 800pcs / 13" Reel

600V N-Channel Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220/ITO-220 TO-262 /TO-263 θJA 62.5 °C/W Junction to Case TO-220 TO-262/TO-263 θJC 1.2 °C/W ITO-220 3.5 PARAMETER SYMBOL T EST CONDITIONS TYP MIN MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS GSV =0V, ID=250μA 600 V Drain-Source Leakage Current IDSS VDS=600V, VGS=0V 10 μA VDS=480V, VGS=0V, TJ =125°C 10 μA Gate- Source Leakage Current Forward IGSS VG=30V, VDS=0V 100 nA Reverse VGS=-30V, VDS=0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 0.53 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) DSV =VGS, ID=250μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) GSV =10V, ID=3.1A 1.0 1.5 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS =0V, f=1.0 MHz 770 1000 pF Output Capacitance COSS pF 95 120 Reverse Transfer Capacitance CRSS 10 13 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD=300V, ID =6.2A, RG =25Ω (Note 1, 2) 40 50 ns Turn-On Rise Time tR ns 70 150 Turn-Off Delay Time tD(OFF) 40 90 ns Turn-Off Fall Time tF 80 100 ns Total Gate Charge QG VDS=480V, ID =6.2A, VGS=10V (Note 1, 2) 20 25 nC Gate-Source Charge QGS nC 4.9 Gate-Drain Charge QGD 9.4 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD GSV =0V, IS=6.2 A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 6.2 A Maximum Pulsed Drain-Source Diode Forward Current I SM 24.8 A Reverse Recovery Time trr VGS=0V, IS=6.2A, dIF/dt =100 A/ μs (Note 1) 290 ns Reverse Recovery Charge QRR μC 2.35 Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. May.2015-REV.00 www.dyelec.com

TEST CIRCUITS AND WAVEFORMS 600V N-Channel Power MOSFET Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * SD controlled by pulse period * D.U.T.-D vice Under Test Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms May.2015-REV.00 www.dyelec.com 6N60

TEST CIRCUITS AND WAVEFORMS(Cont.) 600V N-Channel Power MOSFET Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform VDD BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit tp Time Unclamped Inductive Switching Waveforms Jan.2015-REV.00 www.sddydz.com May.2015-REV.00 www.dyelec.com 6N60

600V N-Channel Power MOSFET Drain Current,ID (A) Drain Current, ID (A) Drain Current,ID (µA) Drain Current,ID (µA) May.2015-REV.00 www.dyelec.com 6N60

600V N-Channel Power MOSFET May.2015-REV.00 www.dyelec.com 6N60 TO-220 Mechanical Drawing TO-220 Mechanical Drawing ITO-220 Mechanical Drawing

600V N-Channel Power MOSFET 7 / 8 May,2015-REV.00 www.dyelec.com TO-262 Mechanical Drawing TO-263 Mechanical Drawing

Specifications of the products displayed herein are subject to change without notice. DIYI or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in DIYI’s terms and conditions of sale for such products, DIYI assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of DIYI products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify DIYI for any damages resulting from such improper use or sale. 600V N-Channel Power MOSFET May.2015-REV.00 www.dyelec.com 6N60