DMT69M8LSS

DMT69M8LSS

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• Manufacturer or author: Diodes Incorporated
• PDF pages: 7

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Document number: DS38325 Rev. 4 - 3 1 of 7 www.diodes.com June 2018 © Diodes Incorporated DMT69M8LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) Max ID Max TA = +25° C 60V 12mΩ @ VGS = 10V 9.8A 14mΩ @ VGS = 4.5V 8.4A Description and Applications This new generation MOSFET is designed to minimize the on -state resistance (R DS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.  Power Management Functions  DC-DC Converters  Backlighting Features and Benefits  100% Unclamped Inductive Switch (UIS) Test in Production  High Conversion Efficiency  Low RDS(ON) – Ensures On-State Losses Are Minimized  Excellent QGD x RDS(ON) Product (FOM)  Advanced Technology for DC-DC Converters  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data  Case: SO-8  Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.074 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMT69M8LSS-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information SO-8 Top View Internal Schematic Top View D S G D S D D D S S G Equivalent Circuit 1 4 8 5 T69M8LS YY WW 1 4 8 5 T6009LS YY WW NOT RECOMMENDED FOR NEW DESIGN USE DMT6012LSS = Manufacturer’s Marking T6009LS & T69M8LS = Date Code Marking YY or YY = Year (ex: 17 = 2017) WW = Week (01 to 53)

Document number: DS38325 Rev. 4 - 3 2 of 7 www.diodes.com June 2018 © Diodes Incorporated DMT69M8LSS Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±16 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 9.8 7.9 A t<10s TA = +25°C TA = +70°C ID 12.2 9.5 A Maximum Continuous Body Diode Forward Current (Note 6) IS 3 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 60 A Avalanche Current, L = 0.1mH IAS 25 A Avalanche Energy, L = 0.1mH EAS 31.5 mJ Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 1.25 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 100 ° C/W t<10s 55.5 ° C/W Total Power Dissipation (Note 6) PD 1.6 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 75 ° C/W t<10s 42 ° C/W Thermal Resistance, Junction to Case (Note 6) RθJC 12 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 60 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS — — 1 μA VDS = 48V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±16V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 0.7 — 2 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 9.8 12 mΩ VGS = 10V, ID = 13.5A — 12 14 VGS = 4.5V, ID = 11.5A Diode Forward Voltage VSD — 0.9 1.2 V VGS = 0V, IS = 20A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 1,925 — pF VDS = 30V, VGS = 0V, f = 1MHz Output Capacitance Coss — 438 — Reverse Transfer Capacitance Crss — 41 — Gate Resistance RG — 1.7 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 10V) QG — 33.5 — nC VDS = 30V, ID = 13.5A Total Gate Charge (VGS = 4.5V) QG — 15.6 — Gate-Source Charge QGS — 4.7 — Gate-Drain Charge QGD — 5.3 — Turn-On Delay Time tD(ON) — 4.5 — ns VDD = 30V, VGS = 10V, RG = 6Ω, ID = 13.5A Turn-On Rise Time tR — 8.6 — Turn-Off Delay Time tD(OFF) — 35.9 — Turn-Off Fall Time tF — 15.7 — Body Diode Reverse Recovery Time tRR — 18.2 — ns IF = 13.5A, di/dt = 400A/μs Body Diode Reverse Recovery Charge QRR — 33.1 — nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout . 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate . 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. NOT RECOMMENDED FOR NEW DESIGN USE DMT6012LSS

Figure 13. Transient Thermal Resistance

Document number: DS38325 Rev. 4 - 3 6 of 7 www.diodes.com June 2018 © Diodes Incorporated DMT69M8LSS Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 b e E A 9° (All sides) 4°± 3° c Q h 45° R 0.1 D L Seating Plane Gauge Plane C X Y SO-8 Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e -- -- 1.27 h - -- 0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50 NOT RECOMMENDED FOR NEW DESIGN USE DMT6012LSS

Document number: DS38325 Rev. 4 - 3 7 of 7 www.diodes.com June 2018 © Diodes Incorporated DMT69M8LSS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability a rising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey an y license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applic ations shall assume all risks of such use and will agree to hold Diodes Incorporated and all the comp anies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnif y and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product name s and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used i n accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwith standing any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporat ed and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2018, Diodes Incorporated www.diodes.com NOT RECOMMENDED FOR NEW DESIGN USE DMT6012LSS