DMT61M8SPS
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 7
Technical content
Features
- 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
- High Conversion Efficiency
- Low RDS(ON) – Minimizes On State Losses
- Low Input Capacitance
- Fast Switching Speed
- Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
- Halogen- and Antimony-Free. “Green” Device (Note 3)
- For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data
- Case: PowerDI®5060-8
- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections: See Diagram Below
- Terminals: FinishMatte Tin Annealed over Copper Lead-Frame. Solderable per MIL-STD-202, Method 208
- Weight: 0.097 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMT61M8SPS-13 PowerDI5060-8 (Type K) 2,500 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Green Top View Pin Configuration Internal Schematic S D S S G D D D T61M8SS YY WW = Manufacturer’s Marking T61M8SS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 21 = 2021) WW = Week (01 to 53) S D D G D D S S Bottom View Top View PowerDI5060-8 (Type K) Pin1 PowerDI is a registered trademark of Diodes Incorporated.
Document number: DS40206 Rev. 8 - 2 2 of 7 www.diodes.com February 2021 © Diodes Incorporated DMT61M8SPS Maximum Ratings (@ TC = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current, VGS = 10V (Note 6) TC = +25°C ID 205 A TC = +70°C 160 Maximum Continuous Body Diode Forward Current (Note 6) IS 205 A Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) IDM 820 A Pulsed Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%) ISM 820 A Avalanche Current, L = 1mH IAS 35.8 A Avalanche Energy, L = 1mH EAS 640.8 mJ Thermal Characteristics (@ TC = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25°C PD 2.7 W Thermal Resistance, Junction to Ambient (Note 5) RθJA 47 °C/W Total Power Dissipation (Note 6) TC = +25°C PD 139 W Thermal Resistance, Junction to Case (Note 6) RθJC 0.9 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@ TC = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 60 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS — — 1 μA VDS = 48V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 2 — 4 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 1.1 1.6 mΩ VGS = 10V, ID = 30A Diode Forward Voltage VSD — 0.7 1.2 V VGS = 0V, IS = 20A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 8306 — pF VDS = 30V, VGS = 0V, f = 1MHz Output Capacitance Coss — 2735 — Reverse Transfer Capacitance Crss — 184 — Gate Resistance Rg — 3.0 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg — 130.6 — nC VDS = 30V, ID = 30A, VGS = 10V Gate-Source Charge Qgs — 30.4 — Gate-Drain Charge Qgd — 28.1 — Turn-On Delay Time tD(ON) — 11.3 — ns VDD = 30V, VGS = 10V, ID = 30A, Rg = 3Ω Turn-On Rise Time tR — 28.5 — Turn-Off Delay Time tD(OFF) — 86.2 — Turn-Off Fall Time tF — 47.6 — Body Diode Reverse Recovery Time tRR — 70.4 — ns IF = 30A, di/dt = 100A/μs Body Diode Reverse Recovery Charge QRR — 127 — nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.
Figure 13. Transient Thermal Resistance
Document number: DS40206 Rev. 8 - 2 6 of 7 www.diodes.com February 2021 © Diodes Incorporated DMT61M8SPS Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 (Type K) Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 (Type K) Dimensions Value (in mm) C 1.270 G 0.660 G1 0.820 X 0.610 X1 3.910 X2 4.420 Y 1.270 Y1 1.020 Y2 3.810 Y3 6.610 DETAIL A 0( 4x) Seating Plane A1c e 01( 4x) D E y x C Ø1.000 Depth 0.07±0.030 A DETAIL A L k M L1La b( 8x) e/2 b1( 8x) b2( 2x)D2 Y C X ( 8x) G PowerDI5060-8 (Type K) Dim Min Max Typ A 0.90 1.10 1.00 A1 0 0.05 0.02 b 0.33 0.51 0.41 b1 0.300 0.366 0.333 b2 0.20 0.35 0.25 c 0.23 0.33 0.277 D 5.15 BSC D1 4.85 4.95 4.90 D2 - - 3.98 E 6.15 BSC E1 5.75 5.85 5.80 E2 3.56 3.725 3.66 e 1.27BSC k - - 1.27 L 0.51 0.71 0.61 La 0.51 0.675 0.61 L1 0.05 0.20 0.175 L4 - - 0.125 M 3.50 3.71 3.605 x - - 1.400 y - - 1.900 θ 10° 12° 11° θ1 6° 8° 7° All Dimensions in mm
Document number: DS40206 Rev. 8 - 2 7 of 7 www.diodes.com February 2021 © Diodes Incorporated DMT61M8SPS IMPORTANT NOTICE 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTIC ULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skill ed and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety -related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional -safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 3. Diodes assumes no liability for any application- related information, support, assistance or feedback that may be provided by Diodes from time to time. 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Should customers or users us e Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any da mages, losses or penalties arising in connection therewith or as a res ult thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may c ontain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error -free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product descri bed herein. This document is written in English but may be translated into multiple languages for reference. Only the English versi on of this document is the final and determinative format released by Diodes. 8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion her eof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. Copyright © 2021 Diodes Incorporated www.diodes.com