DMT6016LFDF_15 DIODES | Alldatasheet

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Datasheet number: DS37203 Rev. 3 - 2 1 of 6 www.diodes.com August 2014 © Diodes Incorporated DMT6016LFDF ADVANCE INFORMATION NEW PRODUCT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS R DS(ON) max ID max TA = +25°C 60V 16mΩ @ VGS = 10V 8.9A 27mΩ @ VGS = 4.5V 6.8A

Description

This new generation MOSFET has been designed to minimize the on- state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications

  • Synchronous Rectifiers
  • Boost Converters
  • Power Management Functions Features and Benefits
  • 100% Unclamped Inductive Switch (UIS) test in production
  • 0.6mm profile – ideal for low profile applications
  • PCB footprint of 4mm
  • Low On-Resistance
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. "Green" Device (Note 3) Mechanical Data
  • Case: U-DFN2020-6
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208
  • Weight: 0.007 grams (approximate) Ordering Information (Note 4) Part Number Marking Reel size (inches) Quantity per reel DMT6016LFDF-7 T6 7 3,000 DMT6016LFDF-13 T6 13 10,000 Notes: 1. No purposely added lead. Fully EU Directiv e 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more in formation about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information Date Code Key Year 2014 2015 2016 2017 2018 2019 2020 Code B C D E F G H Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D U-DFN2020-6 T6 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: A = 2014) M = Month (ex: 9 = September) Equivalent Circuit Pin1 D S G Bottom View Top View Pin Out Bottom View

Datasheet number: DS37203 Rev. 3 - 2 2 of 6 www.diodes.com August 2014 © Diodes Incorporated DMT6016LFDF ADVANCE INFORMATION NEW PRODUCT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 8.9 7.1 A t<10s TA = +25°C TA = +70°C ID 11.1 8.9 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 60 A Maximum Body Diode Continuous Current IS 2.2 A Avalanche Current (Note 7) L = 0.1mH IAS 15.3 A Avalanche Energy (Note 7) L = 0.1mH EAS 11.7 mJ Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = +25°C PD 0.82 W TA = +70°C 0.52 Thermal Resistance, Junction to Ambient (Note 5) Steady state RθJA 153 °C/W t<10s 97 Total Power Dissipation (Note 6) TA = +25°C PD 1.9 W TA = +70°C 1.2 Thermal Resistance, Junction to Ambient (Note 6) Steady state RθJA 66 °C/W t<10s 42 Thermal Resistance, Junction to Case (Note 6) RθJC 14.7 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 60 ⎯ ⎯ V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 µA VDS = 48V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) 1.0 ⎯ 3.0 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) ⎯ ⎯ 16 mΩ VGS = 10V, ID = 10A ⎯ ⎯ 27 VGS = 4.5V, ID = 6A Diode Forward Voltage VSD ⎯ 0.7 1.2 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss ⎯ 864 ⎯ pF VDS = 30V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ 282 ⎯ Reverse Transfer Capacitance Crss ⎯ 27.1 ⎯ Gate Resistance RG ⎯ 1.35 ⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 10V) Q g ⎯ 17 ⎯ nC VDS = 30V, ID = 10A Total Gate Charge (VGS = 4.5V) Q g ⎯ 8.4 ⎯ Gate-Source Charge Qgs ⎯ 3.1 ⎯ Gate-Drain Charge Qgd ⎯ 4.3 ⎯ Turn-On Delay Time tD(on) ⎯ 3.4 ⎯ nS VGS = 10V, VDD = 30V, RG = 6Ω, ID = 10A Turn-On Rise Time tr ⎯ 5.2 ⎯ Turn-Off Delay Time tD(off) ⎯ 12.9 ⎯ Turn-Off Fall Time tf ⎯ 6.8 ⎯ Body Diode Reverse Recovery Time trr ⎯ 22 ⎯ nS IS = 10A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr ⎯ 11.1 ⎯ nC IS = 10A, dI/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing.

Datasheet number: DS37203 Rev. 3 - 2 5 of 6 www.diodes.com August 2014 © Diodes Incorporated DMT6016LFDF ADVANCE INFORMATION NEW PRODUCT Package Outline Dimensions Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. t1, PULSE DURATION TIME (sec) Figure 12 Transient Thermal Resistance r(t), TRANSIENT THERMAL RESISTANCE D = 0.5 D = 0.7 D = 0.9 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse R (t) = r(t) * R R = 152°C/W Duty Cycle, D = t1/ t2 θθ θ JA JA JA 0.001 0.01 0.1 U-DFN2020-6 Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 - - 0.15 b 0.25 0.35 0.30 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 D3 0.33 0.43 0.38 e 0.65 BSC e2 0.863 BSC E 1.95 2.05 2.00 E2 1.05 1.25 1.15 E3 0.65 0.75 0.70 L 0.225 0.325 0.275 Z 0.20 BSC Z1 0.110 BSC All Dimensions in mm Dimensions Value (in mm) C 0.650 X 0.400 X1 0.480 X2 0.950 X3 1.700 Y 0.425 Y1 0.800 Y2 1.150 Y3 1.450 Y4 2.300 D D2E e b L A Seati ng Pl ane Z︵4X︶ E3 D3 Pi n1 Y4Y2 YXC

Datasheet number: DS37203 Rev. 3 - 2 6 of 6 www.diodes.com August 2014 © Diodes Incorporated DMT6016LFDF ADVANCE INFORMATION NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated a nd all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of t his document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated www.diodes.com