DMT6012LFDF
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 8
Technical content
60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) Max ID Max TA = +25°C 60V 14mΩ @ VGS = 10V 9.5 21mΩ @ VGS = 4.5V 7.7 Description and Applications This new generation MOSFET is designed to minimize the on- state resistance (R DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
- DC-DC Converter
- Adaptor Switch
- Wireless Charging Features and Benefits
- 100% Unclamped Inductive Switching (UIS) Test in Production— Ensures More Reliable and Robust End Application
- 0.6mm Profile—Ideal for Low Profile Applications
- PCB Footprint of 4mm2
- Low On-Resistance
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. "Green" Device (Note 3)
- For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data
- Case: U-DFN2020-6 (Type F)
- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish—NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208
- Weight: 0.007 grams (Approximate) Ordering Information (Note 4) Part Number Package Quantity per Reel DMT6012LFDF-7 U-DFN2020-6 (Type F) 3000 DMT6012LFDF-13 U-DFN2020-6 (Type F) 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant . 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. U-DFN2020-6 (Type F) Equivalent Circuit Pin1 D S G Bottom View Top View Pin Out Bottom View DMT6012LFDF Datasheet number: DS41142 Rev. 4 - 2 1 of 8 www.diodes.com February 2020 © Diodes Incorporated
Site 1: Date Code Key Year 2017 2018 2019 2020 2021 2022 2023 2024 2025 Code E F G H I J K L M Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Site 2: Date Code Key Year 2017 2018 2019 2020 2021 2022 2023 2024 2025 Code 7 8 9 0 1 2 3 4 5 Week 1-26 27-52 53 Code A-Z a-z z Internal Code Sun Mon Tue Wed Thu Fri Sat Code T U V W X Y Z T12 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: H = 2020) M = Month (ex: 9 = September) T12 = Product Type Marking Code YWX = Date Code Marking Y = Year (ex: 0 = 2020) W = Week (ex: a = week 27; z represents week 52 and 53) X = Internal code (ex: U = Monday) DMT6012LFDF Datasheet number: DS41142 Rev. 4 - 2 2 of 8 www.diodes.com February 2020 © Diodes Incorporated
Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V TA = +25°C TA = +70°C ID 9.5 7.6 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 60 A Maximum Body Diode Continuous Current IS 2.1 A Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%) ISM 60 A Avalanche Current (Note 7) L = 0.1mH IAS 12.6 A Avalanche Energy (Note 7) L = 0.1mH EAS 7.9 mJ Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25°C PD 0.9 W TA = +70°C 0.6 Thermal Resistance, Junction to Ambient (Note 5) RϴJA 131 °C/W Total Power Dissipation (Note 6) TA = +25°C PD 1.9 W TA = +70°C 1.2 Thermal Resistance, Junction to Ambient (Note 6) RϴJA 66 °C/W Total Power Dissipation (Note 6) TC = +25°C PD 11 W Thermal Resistance, Junction to Case (Note 6) RϴJC 11.4 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS 1 µA VDS = 48V, VGS = 0V Gate-Source Leakage IGSS ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) 1.2 2.3 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) 10.7 14 mΩ VGS = 10V, ID = 8.5A 15.7 21 VGS = 4.5V, ID = 6A Diode Forward Voltage VSD 0.7 1.2 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss 785 pF VDS = 30V, VGS = 0V f = 1MHz Output Capacitance Coss 281 Reverse Transfer Capacitance Crss 27 Gate Resistance Rg 1.5 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg 7.3 nC VDS = 30V, ID = 10A Total Gate Charge (VGS = 10V) Qg 13.6 Gate-Source Charge Qgs 2.2 Gate-Drain Charge Qgd 3.4 Turn-On Delay Time tD(ON) 3.2 ns VGS = 10V, VDD = 30V, Rg = 6Ω,ID = 10A Turn-On Rise Time tR 4.4 Turn-Off Delay Time tD(OFF) 14.7 Turn-Off Fall Time tF 8.5 Body Diode Reverse Recovery Time tRR 23.0 ns IF = 10A, di/dt = 100A/μs Body Diode Reverse Recovery Charge QRR 14.1 nC Notes: 5. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMT6012LFDF Datasheet number: DS41142 Rev. 4 - 2 3 of 8 www.diodes.com February 2020 © Diodes Incorporated
0.001 0.01 0.1 R (t) = r(t) * Rθ θJA JA R = 129°C/WθJA Duty Cycle, D = t1/ t2 D = 0.9 D = 0.5 D = 0.7 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse r(t), TRANSIENT THERMAL RESISTANCE t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance DMT6012LFDF Datasheet number: DS41142 Rev. 4 - 2 6 of 8 www.diodes.com February 2020 © Diodes Incorporated
Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type F) U-DFN2020-6 (Type F) Dim Min Max Typ A 0.57 0.63 0.60 A1 0.00 0.05 0.03 A3 — — 0.15 b 0.25 0.35 0.30 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 D2a 0.33 0.43 0.38 E 1.95 2.05 2.00 E2 1.05 1.25 1.15 E2a 0.65 0.75 0.70 e 0.65 BSC e2 0.863 BSC e3 0.70 BSC e4 0.325 BSC k 0.37 BSC k1 0.15 BSC k2 0.36 BSC L 0.225 0.325 0.275 z 0.20 BSC z1 0.110 BSC z2 0.20 BSC All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type F) Dimensions Value (in mm) C 0.650 X 0.400 X1 0.480 X2 0.950 X3 1.700 Y 0.425 Y1 0.800 Y2 1.150 Y3 1.450 Y4 2.300 D E e b L A Seating Plane z( 4x) E2a D2a e3 e4 k Pin1 Y4Y2 YXC DMT6012LFDF Datasheet number: DS41142 Rev. 4 - 2 7 of 8 www.diodes.com February 2020 © Diodes Incorporated
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