DMT6006LSS
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 7
Technical content
Document number: DS42026 Rev. 2 - 2 1 of 7 www.diodes.com November 2019 © Diodes Incorporated DMT6006LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) Max ID Max TA = +25° C 60V 6.5mΩ @ VGS = 10V 14.6A 10mΩ @ VGS = 4.5V 11.8A Description and Applications This MOSFET is designed to minimize the on -state resistance (RDS(ON)) and maintain superior switching performance, which makes it ideal for high-efficiency power management applications. High-Frequency Switching Synchronous Rectification DC-DC Converters Features and Benefits 100% Unclamped Inductive Switching (UIS) Test in Production — Ensures More Reliable and Robust End Application High Conversion Efficiency Low RDS(ON) — Minimizes On-State Losses Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.076 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMT6006LSS-13 SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information 1 4 8 5 N3016LS WWYY 1 4 8 5 N3016LS WW YY T6006LS SO-8 D S G Equivalent Circuit Pin1 D S S S G D D D Pin-Out Top View Top View = Manufacturer’s Marking T6006LS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 19 = 2019) WW = Week (01 to 53)
Document number: DS42026 Rev. 2 - 2 2 of 7 www.diodes.com November 2019 © Diodes Incorporated DMT6006LSS Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 5) VGS = 10V TA = +25°C TA = +70°C ID 11.9 9.5 A Continuous Drain Current (Note 6) VGS = 10V TA = +25°C TA = +70°C ID 14.6 11.7 A Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) IDM 110 A Maximum Continuous Body Diode Forward Current (Note 6) IS 10 A Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%) ISM 110 A Avalanche Current, L = 0.1mH IAS 28.5 A Avalanche Energy, L = 0.1mH EAS 40.7 mJ Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 1.38 W Thermal Resistance, Junction to Ambient (Note 5) RϴJA 90.3 ° C/W Total Power Dissipation (Note 6) PD 2.08 W Thermal Resistance, Junction to Ambient (Note 6) RϴJA 60.1 ° C/W Thermal Resistance, Junction to Case (Note 6) RϴJC 6.5 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 60 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS — — 1 µA VDS = 48V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 1.3 1.74 2.5 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) — 5.0 6.5 mΩ VGS = 10V, ID = 20A — 6.7 10 VGS = 4.5V, ID = 10A Diode Forward Voltage VSD — 0.8 1.2 V VGS = 0V, IS = 20A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 2162 — pF VDS = 30V, VGS = 0V, f = 1MHz Output Capacitance Coss — 761 — Reverse Transfer Capacitance Crss — 58 — Gate Resistance Rg — 0.7 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg — 18.1 — nC VDS = 30V, ID = 20A Total Gate Charge (VGS = 10V) Qg — 34.9 — Gate-Source Charge Qgs — 6.1 — Gate-Drain Charge Qgd — 7.3 — Turn-On Delay Time tD(ON) — 6.0 — ns VGS = 10V, VDD = 30V, RG = 3Ω, ID = 20A Turn-On Rise Time tR — 5.4 — Turn-Off Delay Time tD(OFF) — 20.4 — Turn-Off Fall Time tF — 7.8 — Reverse Recovery Time tRR — 35.8 — ns IF = 10A, di/dt = 100A/µs Reverse Recovery Charge QRR — 40.2 — nC Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.
Figure 13. Transient Thermal Resistance
Document number: DS42026 Rev. 2 - 2 6 of 7 www.diodes.com November 2019 © Diodes Incorporated DMT6006LSS Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 b e E A 9° (All sides) 4°± 3° c Q h 45° R 0.1 D L Seating Plane Gauge Plane C X Y SO-8 Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e -- -- 1.27 h - -- 0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50
Document number: DS42026 Rev. 2 - 2 7 of 7 www.diodes.com November 2019 © Diodes Incorporated DMT6006LSS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of th is document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product name s and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the ex press written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incor porated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2019, Diodes Incorporated www.diodes.com