DMT6004SPS

DMT6004SPS

Document overview

• Manufacturer or author: Diodes Incorporated
• PDF pages: 7

Technical content

Features

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
• Low RDS(ON) – Minimizes Power Losses
• Low Qg – Minimizes Switching Losses
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data
• Package: PowerDI®5060-8
• Package Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Finish – Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208
• Weight: 0.097 grams (Approximate) Ordering Information (Note 4) Orderable Part Number Package Packing Qty. Carrier DMT6004SPS-13 PowerDI5060-8 2,500 Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl ) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Green Bottom View Top View Pin Configuration Top View Internal Schematic PowerDI5060-8 Pin1 S D D G D D S S S D S S G D D D T6004SS YY WW = Manufacturer’s Marking T6004SS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 24 = 2024) WW = Week (01 to 53)

Document number: DS37324 Rev. 6 - 2 2 of 7 www.diodes.com October 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. DMT6004SPS Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 5) Steady State TA = +25°C TA = +70°C ID 23 18 A Continuous Drain Current (Notes 6 & 9) TC = +25°C ID 100 A TC = +70°C 100 Maximum Continuous Body Diode Forward Current (Notes 6 & 9) IS 100 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 400 A Pulsed Body Diode Forward Current (10µ s Pulse, Duty Cycle = 1%) ISM 400 A Avalanche Current, L = 0.2mH IAS 45 A Avalanche Energy, L = 0.2mH EAS 200 mJ Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25°C PD 2.6 W Thermal Resistance, Junction to Ambient Steady State RθJA 47 ° C/W Total Power Dissipation (Note 6) TC = +25°C PD 139 W Thermal Resistance, Junction to Case RθJC 0.9 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 60 — — V VGS = 0V, ID = 1mA Zero Gate Voltage Drain Current IDSS — — 1 μA VDS = 48V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 2 2.5 4 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — — 3.1 mΩ VGS = 10V, ID = 50A Diode Forward Voltage VSD — 0.9 1.2 V VGS = 0V, IS = 20A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 4,556 — pF VDS = 30V, VGS = 0V, f = 1MHz Output Capacitance Coss — 1,383 — Reverse Transfer Capacitance Crss — 105.2 — Gate Resistance Rg — 0.7 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg — 95.4 — nC VDD = 30V, ID = 90A, VGS = 10V Gate-Source Charge Qgs — 21.6 — Gate-Drain Charge Qgd — 20.4 — Turn-On Delay Time tD(ON) — 13.2 — ns VDD = 30V, VGS = 10V, ID = 90A, Rg = 3.5Ω Turn-On Rise Time tR — 11.7 — Turn-Off Delay Time tD(OFF) — 31 — Turn-Off Fall Time tF — 12 — Body Diode Reverse Recovery Time tRR — 50.5 — ns IF = 50A, di/dt = 100A/μs Body Diode Reverse Recovery Charge QRR — 80.8 — nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 9. Package limited.

Document number: DS37324 Rev. 6 - 2 4 of 7 www.diodes.com October 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. DMT6004SPS VGS(TH), GATE THRESHOLD VOLTAGE (V) T , JUNCTION TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Junction Temperature J V G A T E T H R E S H O L D V O L T A G E ( V ) G S ( t h ) 0.5 1.5 2.5 -50 -25 0 25 50 75 100 125 150 175 I = 1mA D I = 250µ A D TJ, V , SOURCE-DRAIN VOLTAGE (V) SD Figure 9 Diode Forward Voltage vs. Current I , S O U R C E C U R R E N T ( A ) S

30 T = 125° C A

T = 150° C A T = 175° C A T = -55° C A T = 25° C A T = 85° C A IS, SOURCE CURRENT (A) V , DRAIN-SOURCE VOLTAGE (V)DS Figure 10 Typical Junction Capacitance C , JUNCTION CAPACITANCE (pF)T 100 1000 10000 0 5 10 15 20 25 30 35 40 Ciss f = 1MHz Coss Crss T , JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature J  R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON)  0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008 -50 -25 0 25 50 75 100 125 150 175 V = V I = 90A GS D V = V I = 100A GS D 0.1 100 1000 0.1 1 10 100 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area RDS(ON) Limited TJ(Max) = 150℃ TC = 25℃ Single Pulse DUT on Infinite Heatsink VGS = 10V DC PW =100ms PW =10ms PW =1ms PW =100µs PW =10µs PW =1µs Q (nC)g, TOTAL GATE CHARGE Figure 11 Gate Charge V GATE THRESHOLD VOLTAGE (V)GS 0 10 20 30 40 50 60 70 V = 20V I = A DS D

Document number: DS37324 Rev. 6 - 2 5 of 7 www.diodes.com October 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. DMT6004SPS 0.001 0.01 0.1 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), TRANSIENT THERMAL RESISTANCE t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance RθJC(t) = r(t) * RθJC RθJC = 0.9℃/W Duty Cycle, D = t1/t2D = Single Pulse D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.3 D = 0.5 D = 0.7 D = 0.9

Document number: DS37324 Rev. 6 - 2 6 of 7 www.diodes.com October 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. DMT6004SPS Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 − b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 − − L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 Θ 10º 12º 11º Θ1 6º 8º 7º All Dimensions in mm Dimensions Value (in mm) C 1.270 G 0.660 G1 0.820 X 0.610 X1 4.100 X2 0.755 X3 4.420 X4 5.610 Y 1.270 Y1 0.600 Y2 1.020 Y3 0.295 Y4 1.825 Y5 3.810 Y6 0.180 Y7 6.610 A L K M G Detail A 0( 4X) c e D E Detail A b ( 8X) e/2 01 ( 4X) b2 ( 4X) b3 ( 4X)E3 X3 Y2 X C Y( 4x) G PowerDI5060-8 PowerDI5060-8

Document number: DS37324 Rev. 6 - 2 7 of 7 www.diodes.com October 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. DMT6004SPS IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who d esign with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality co ntrol techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associ ated with their applications. 3. Diodes assumes no liability for any application -related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities a ssociated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against al l damages and liabilities. 4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or fore ign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 5. Diodes’ products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in r espect of any products purchased through unauthorized sales channel. 6. Diodes’ products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sa le is prohibited under any applicable laws and regulations. Should customers or users use Diodes’ products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any da mages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives a nd agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may c ontain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this docume nt is error-free and Diodes is under no obligation to update or otherwise correct this information. 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