DMT5015LFDF
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 8
Technical content
Features
0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data Case: U-DFN2020-6 (Type F) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.007 grams (Approximate) Ordering Information (Note 4) Part Number Marking Reel Size (inches) Quantity per Reel DMT5015LFDF-7 T5 7 3000 DMT5015LFDF-13 T5 13 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant . 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Pin Out Internal Schematic U-DFN2020-6 (Type F) Bottom View Bottom View Top View D S G NOT RECOMMENDED FOR NEW DESIGN CONTACT US
Datasheet number: DS37202 Rev. 7 - 3 2 of 8 www.diodes.com March 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DMT5015LFDF Marking Information Site 1: Date Code Key Year 2013 … 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 Code A … G H I J K L M N O P Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Site 2: Date Code Key Year 2020 2021 2022 2023 2024 2025 2026 2027 2028 Code 0 1 2 3 4 5 6 7 8 Week 1-26 27-52 53 Code A-Z a-z z Internal Code Sun Mon Tue Wed Thu Fri Sat Code T U V W X Y Z T5 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: H = 2020) M = Month (ex: 9 = September) YM T5 = Product Type Marking Code YWX = Date Code Marking Y = Year (ex: H = 2020) W = Week (ex: a = week 27; z represents week 52 and 53) X = Internal code (ex: U = Monday) YWX
Datasheet number: DS37202 Rev. 7 - 3 3 of 8 www.diodes.com March 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DMT5015LFDF Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 50 V Gate-Source Voltage VGSS ±16 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 9.1 7.3 A t<10s TA = +25°C TA = +70°C ID 11.5 9.2 A Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) IDM 60 A Continuous Source-Drain Diode Current TA = +25°C IS 2.2 A Avalanche Current (Note 7) L = 0.1mH IAS 14.4 A Avalanche Energy (Note 7) L = 0.1mH EAS 10.4 mJ Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = +25°C PD 0.82 W TA = +70°C 0.52 Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 153 °C/W t<10s 96 Total Power Dissipation (Note 6) TA = +25°C PD 1.97 W TA = +70°C 1.2 Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 67 °C/W t<10s 42 Thermal Resistance, Junction to Case (Note 6) Steady State RθJC 14 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 50 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 1 µA VDS = 40V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±16V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) 0.5 — 2.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 10.5 15 mΩ VGS = 10V, ID = 8A 14 23 VGS = 4.5V, ID = 6A Diode Forward Voltage VSD — 0.7 1.0 V VGS = 0V, IS = 5A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance CISS — 902.7 — pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance COSS — 301.4 — Reverse Transfer Capacitance CRSS — 15.2 — Gate Resistance RG — 1.9 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) QG — 6.1 — nC VDS = 25V, ID = 8A Total Gate Charge (VGS = 10V) QG — 14 — Gate-Source Charge QGS — 2.4 — Gate-Drain Charge QGD — 1.6 — Turn-On Delay Time tD(ON) — 2.8 — ns VDS = 25V, VGS = 10V, RG = 3Ω, ID = 8A Turn-On Rise Time tR — 5.1 — Turn-Off Delay Time tD(OFF) — 10.6 — Turn-Off Fall Time tF — 2.7 — Reverse Recovery Time tRR — 18.9 — ns IF = 8A, di/dt = 100A/μs Reverse Recovery Charge QRR —- 9.2 — nC IF = 8A, di/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep T J = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing.
Datasheet number: DS37202 Rev. 7 - 3 6 of 8 www.diodes.com March 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DMT5015LFDF t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance r(t), TRANSIENT THERMAL RESISTANCE D = 0.5 D = 0.7 D = 0.9 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse R (t) = r(t) * R R = 153°C/W Duty Cycle, D = t1/ t2 JA JA JA 0.001 0.01 0.1 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Datasheet number: DS37202 Rev. 7 - 3 7 of 8 www.diodes.com March 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DMT5015LFDF Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type F) U-DFN2020-6 (Type F) Dim Min Max Typ A 0.57 0.63 0.60 A1 0.00 0.05 0.03 A3 - - 0.15 b 0.25 0.35 0.30 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 D2a 0.33 0.43 0.38 E 1.95 2.05 2.00 E2 1.05 1.25 1.15 E2a 0.65 0.75 0.70 e 0.65 BSC e2 0.863 BSC e3 0.70 BSC e4 0.325 BSC k 0.37 BSC k1 0.15 BSC k2 0.36 BSC L 0.225 0.325 0.275 z 0.20 BSC z1 0.110 BSC z2 0.20 BSC All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type F) Dimensions Value (in mm) C 0.650 X 0.400 X1 0.480 X2 0.950 X3 1.700 Y 0.425 Y1 0.800 Y2 1.150 Y3 1.450 Y4 2.300 D E e b L A Seating Plane z(4x) E2a D2a e3 e4 k Pin1 Y4Y2 YXC
Datasheet number: DS37202 Rev. 7 - 3 8 of 8 www.diodes.com March 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DMT5015LFDF IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who d esign with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality co ntrol techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with th eir applications. 3. Diodes assumes no liability for any application -related information, support, assistance or feedback that may be provided by Diodes from time to time. 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