DMT4014LDV DIODES | Alldatasheet
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Document number: DS42919 Rev. 2 - 2 1 of 7 www.diodes.com December 2020 © Diodes Incorporated DMT4014LDV 40V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS RDS(ON) Max ID Max TC = +25° C 40V 19mΩ @ VGS = 10V 26.5A 29mΩ @ VGS = 4.5V 21.8A Description and Applications This MOSFET is designed to minimize the on -state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Wireless Charging DC-DC Converters Power Management Features and Benefits 100% Unclamped Inductive Switching (UIS) Test in Production — Ensures More Reliable and Robust End Application Low RDS(ON) — Ensures On-State Losses Are Minimized Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data Case: PowerDI®3333-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish — Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMT4014LDV-7 PowerDI3333-8 (Type UXC) 2,000/Tape & Reel DMT4014LDV-13 PowerDI3333-8 (Type UXC) 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information PowerDI3333-8 (Type UXC) T14 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 20 = 2020) WW = Week Code (01 to 53) Internal Schematic T14 YYWW PowerDI is a registered trademark of Diodes Incorporated. Top View Bottom View D1 D1 S1 G1 S2 G2 Pin 1 PowerDI3333-8 (Type UXC)
Document number: DS42919 Rev. 2 - 2 2 of 7 www.diodes.com December 2020 © Diodes Incorporated DMT4014LDV Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V TC = +25° C TC = +70° C ID 26.5 21.2 A Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25° C TA = +70° C ID 8.5 6.8 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 100 A Maximum Continuous Body Diode Forward Current (Note 6) IS 2.7 A Pulsed Body Diode Forward Current (10µ s Pulse, Duty Cycle = 1%) ISM 100 A Avalanche Current, L = 0.1mH IAS 19.8 A Avalanche Energy, L = 0.1mH EAS 19.6 mJ Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25° C PD 1.0 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RJA 124 ° C/W Total Power Dissipation (Note 6) TA = +25° C PD 2.1 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RJA 61 ° C/W Thermal Resistance, Junction to Case (Note 6) RJC 6.2 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 40 — — V VGS = 0V, ID = 1mA Zero Gate Voltage Drain Current IDSS — — 1 µA VDS = 32V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 1 — 3 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 14.7 19 mΩ VGS = 10V, ID = 20A — 21.2 29 VGS = 4.5V, ID = 15A Diode Forward Voltage VSD — 1.0 1.2 V VGS = 0V, IS = 20A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 750 — pF VDS = 20V, VGS = 0V, f = 1MHz Output Capacitance Coss — 225 — pF Reverse Transfer Capacitance Crss — 21 — pF Gate Resistance Rg — 1.1 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg — 5.7 — nC VDS = 20V, ID = 20A Total Gate Charge (VGS = 10V) Qg — 11.2 — nC Gate-Source Charge Qgs — 2.0 — nC Gate-Drain Charge Qgd — 2.2 — nC Turn-On Delay Time tD(ON) — 3.5 — ns VGS = 10V, VDD = 20V, Rg = 1.6Ω, ID = 20A Turn-On Rise Time tR — 4.6 — ns Turn-Off Delay Time tD(OFF) — 12.4 — ns Turn-Off Fall Time tF — 4.9 — ns Body Diode Reverse Recovery Time tRR — 11.3 — ns IF = 15A, di/dt = 400A/µs Body Diode Reverse Recovery Charge QRR — 9.5 — nC Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.
Figure 13. Transient Thermal Resistance
Document number: DS42919 Rev. 2 - 2 6 of 7 www.diodes.com December 2020 © Diodes Incorporated DMT4014LDV Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 (Type UXC) Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 (Type UXC) D EE1 A c L L b e k a X Y C Y1X1 GG1 PowerDI3333-8 (Type UXC) Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 -- b 0.25 0.40 0.32 c 0.10 0.25 0.15 D 3.20 3.40 3.30 D1 2.95 3.15 3.05 D2 0.90 1.30 1.10 E 3.20 3.40 3.30 E1 2.95 3.15 3.05 E2 1.60 2.00 1.80 E3 0.95 1.35 1.15 E4 0.10 0.30 0.20 e 0.65 L 0.30 0.50 0.40 k 0.50 0.90 0.70 k1 0.13 0.53 0.33 a 0° 12° 10° All Dimensions in mm Dimensions Value (in mm) C 0.650 G 0.230 G1 0.600 X 0.420 X1 1.200 X2 2.370 X3 2.630 Y 0.600 Y1 1.900 Y2 2.400 Y3 3.600
Document number: DS42919 Rev. 2 - 2 7 of 7 www.diodes.com December 2020 © Diodes Incorporated DMT4014LDV IMPORTANT NOTICE 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTIC ULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operati on of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engi neering customers and users who design with Diodes products. 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