DMT4008LFDF

Document overview

  • Manufacturer or author: Diodes Incorporated
  • PDF pages: 8

Technical content

Features

  • Low RDS(ON) – Ensures on state losses are minimized
  • Excellent Qgd x RDS(ON) Product (FOM)
  • 0.6mm Profile – Ideal for Low Profile Applications
  • PCB Footprint of 4mm2
  • Low Gate Threshold Voltage
  • Fast Switching Speed
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data
  • Case: U-DFN2020-6 (Type F)
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208
  • Weight: 0.0065 grams (Approximate) Ordering Information (Note 4) Part Number Case Quantity per Reel DMT4008LFDF-7 U-DFN2020-6 (Type F) 3000 DMT4008LFDF-13 U-DFN2020-6 (Type F) 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Pin Out Bottom View Internal Schematic U-DFN2020-6 (Type F) Bottom View Top View D S G DMT4008LFDF Datasheet number: DS39333 Rev. 4 - 2 1 of 8 www.diodes.com March 2020 © Diodes Incorporated

Site 1: Date Code Key Year 2013 … 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 Code A … G H I J K L M N O P Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Site 2: Date Code Key Year 2020 2021 2022 2023 2024 2025 2026 2027 2028 Code 0 1 2 3 4 5 6 7 8 Week 1-26 27-52 53 Code A-Z a-z z Internal Code Sun Mon Tue Wed Thu Fri Sat Code T U V W X Y Z 8M = Product Type Marking Code YM = Date Code Marking Y = Year (ex: H= 2020) M = Month (ex: 9 = September) YM 8M = Product Type Marking Code YWX = Date Code Marking Y = Year (ex: H = 2020) W = Week (ex: a = week 27; z represents week 52 and 53) X = Internal code (ex: U = Monday) YWX DMT4008LFDF Datasheet number: DS39333 Rev. 4 - 2 2 of 8 www.diodes.com March 2020 © Diodes Incorporated

Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V TA = +25°C TA = +70°C ID 11.8 9.4 A Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) IDM 70 A Pulsed Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%) ISM 70 A Continuous Source-Drain Diode Current IS 2.2 A Avalanche Current, L = 0.3mH IAS 13.3 A Avalanche Energy, L = 0.3mH EAS 26.5 mJ Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25°C PD 0.8 W Thermal Resistance, Junction to Ambient (Note 5) RθJA 155 °C/W Total Power Dissipation (Note 6) TA = +25°C PD 2.0 W Thermal Resistance, Junction to Ambient (Note 6) RθJA 63 °C/W Thermal Resistance, Junction to Case (Note 6) TC = +25°C RθJC 8.9 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 40 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current (TJ = +25°C) IDSS — — 1 µA VDS = 32V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 1 1.7 3 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 7.8 9.5 mΩ VGS = 10V, ID = 10A — 10.6 15.5 VGS = 4.5V, ID = 8.5A Diode Forward Voltage VSD — 0.7 1.0 V VGS = 0V, IS = 10A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 1179 — pF VDS = 20V, VGS = 0V, f = 1MHz Output Capacitance Coss — 384 — Reverse Transfer Capacitance Crss — 42 — Gate Resistance RG — 1.7 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) QG — 8.3 — nC VDD = 20V, ID = 10A Total Gate Charge (VGS = 10V) QG — 17.1 — Gate-Source Charge QGS — 2.4 — Gate-Drain Charge QGD — 3.4 — Turn-On Delay Time tD(ON) — 3.5 — ns VDD = 20V, VGS = 10V, RG = 6Ω, ID = 10A Turn-On Rise Time tR — 3.7 — Turn-Off Delay Time tD(OFF) — 17.1 — Turn-Off Fall Time tF — 6.4 — Reverse Recovery Time tRR — 19.8 — ns IF = 10A, di/dt = 100A/μs Reverse Recovery Charge QRR — 8.8 — nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMT4008LFDF Datasheet number: DS39333 Rev. 4 - 2 3 of 8 www.diodes.com March 2020 © Diodes Incorporated

Figure 13. Transient Thermal Resistance

Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type F) U-DFN2020-6 (Type F) Dim Min Max Typ A 0.57 0.63 0.60 A1 0.00 0.05 0.03 A3 - - 0.15 b 0.25 0.35 0.30 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 D2a 0.33 0.43 0.38 E 1.95 2.05 2.00 E2 1.05 1.25 1.15 E2a 0.65 0.75 0.70 e 0.65 BSC e2 0.863 BSC e3 0.70 BSC e4 0.325 BSC k 0.37 BSC k1 0.15 BSC k2 0.36 BSC L 0.225 0.325 0.275 z 0.20 BSC z1 0.110 BSC z2 0.20 BSC All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type F) Dimensions Value (in mm) C 0.650 X 0.400 X1 0.480 X2 0.950 X3 1.700 Y 0.425 Y1 0.800 Y2 1.150 Y3 1.450 Y4 2.300 D E e b L A Seating Plane z( 4x) E2a D2a e3 e4 k Pin1 Y4Y2 YXC DMT4008LFDF Datasheet number: DS39333 Rev. 4 - 2 7 of 8 www.diodes.com March 2020 © Diodes Incorporated

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the ex press written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incor porated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2020, Diodes Incorporated www.diodes.com DMT4008LFDF Datasheet number: DS39333 Rev. 4 - 2 8 of 8 www.diodes.com March 2020 © Diodes Incorporated