DMT12H065LFDF
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 8
Technical content
Datasheet number: DS40715 Rev. 4 - 2 1 of 8 www.diodes.com July 2019 © Diodes Incorporated DMT12H065LFDF D S G 115V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS BVDSS@ TJ Max RDS(ON) Max ID Max TA = +25° C 115V 120V 65mΩ @ VGS = 10V 4.3A 70mΩ @ VGS = 4.5V 4.5A
Description
This new generation MOSFET is designed to minimize the on -state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Applications
DC-DC Primary Switch Load Switch Features and Benefits 0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low On-Resistance 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Case: U-DFN2020-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0065 grams (Approximate) Ordering Information (Note 4) Part Number Case Quantity Per Reel DMT12H065LFDF-7 U-DFN2020-6 (Type F) 3,000 DMT12H065LFDF-13 U-DFN2020-6 (Type F) 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information U-DFN2020-6 (Type F) Date Code Key Year 2019 2020 2021 2022 2023 2024 2025 2026 2027 Code G H I J K L M N O Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D 96 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: G = 2019) M = Month (ex: 9 = September) Y M U-DFN2020-6 (Type F) Equivalent Circuit Bottom View Top View Pin Out Bottom View Pin1
Datasheet number: DS40715 Rev. 4 - 2 2 of 8 www.diodes.com July 2019 © Diodes Incorporated DMT12H065LFDF Marking Information (continued) U-DFN2020-6 (Type F) Date Code Key Year 2019 2020 2021 2022 2023 2024 2025 2026 2027 Code 9 0 1 2 3 4 5 6 7 Week 1-26 27-52 53 Code A-Z a-z z Internal Code Sun Mon Tue Wed Thu Fri Sat Code T U V W X Y Z Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 115 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current, VGS = 10V (Note 6) TA = +25° C TA = +70° C ID 4.3 3.4 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 25 A Maximum Body Diode Continuous Current (Note 6) IS 6 A Pulsed Body Diode Continuous Current (10µs Pulse, Duty Cycle = 1%) ISM 25 A Avalanche Current, L = 0.3mH IAS 4 A Avalanche Energy, L = 0.3mH EAS 2.4 mJ Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25° C PD 1.0 W TA = +70°C 0.6 Thermal Resistance, Junction to Ambient (Note 5) RJA 124 ° C/W Total Power Dissipation (Note 6) TA = +25° C PD 1.8 W TA = +70°C 1.2 Thermal Resistance, Junction to Ambient (Note 6) RJA 69 ° C/W Thermal Resistance, Junction to Case (Note 6) RJC 13 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout . 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate . YW X 96 = Product Type Marking Code YWX = Date Code Marking Y = Year (ex: 9 = 2019) W = Week (ex: a = week 27; z represents week 52 and 53) X = Internal Code (ex: U = Monday)
Datasheet number: DS40715 Rev. 4 - 2 3 of 8 www.diodes.com July 2019 © Diodes Incorporated DMT12H065LFDF Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 115 — — V VGS = 0V, ID = 10mA Zero Gate Voltage Drain Current IDSS — — 1 µA VDS = 92V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±9.6V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 0.6 — 2.2 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 43 65 mΩ VGS = 10V, ID = 3A — 54 70 VGS = 4.5V, ID = 3A — 58 150 VGS = 3.8V, ID = 1.0A — 75 350 VGS = 3V, ID = 0.5A Diode Forward Voltage VSD — 0.8 1.3 V VGS = 0V, IS = 2.4A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 252 — pF VDS = 50V, VGS = 0V, f = 1MHz Output Capacitance Coss — 80 — pF Reverse Transfer Capacitance Crss — 3 — pF Gate Resistance Rg — 6.9 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg — 5.5 — nC VDS = 50V, ID = 4.5A, VGS = 10V Gate-Source Charge Qgs — 0.4 — nC Gate-Drain Charge Qgd — 1.7 — nC Turn-On Delay Time tD(ON) — 2.1 — ns VDS = 50V, RL = 11Ω VGS = 10V, RGEN = 3Ω Turn-On Rise Time tR — 2 — ns Turn-Off Delay Time tD(OFF) — 10 — ns Turn-Off Fall Time tF — 3.6 — ns Reverse Recovery Time tRR — 101 — ns IF = 4.5A, di/dt = 300A/μs Reverse Recovery Charge QRR — 212 — nC Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.
Figure 13. Transient Thermal Resistance
Datasheet number: DS40715 Rev. 4 - 2 7 of 8 www.diodes.com July 2019 © Diodes Incorporated DMT12H065LFDF Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type F) U-DFN2020-6 (Type F) Dim Min Max Typ A 0.57 0.63 0.60 A1 0.00 0.05 0.03 A3 - - 0.15 b 0.25 0.35 0.30 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 D2a 0.33 0.43 0.38 E 1.95 2.05 2.00 E2 1.05 1.25 1.15 E2a 0.65 0.75 0.70 e 0.65 BSC e2 0.863 BSC e3 0.70 BSC e4 0.325 BSC k 0.37 BSC k1 0.15 BSC k2 0.36 BSC L 0.225 0.325 0.275 z 0.20 BSC z1 0.110 BSC z2 0.20 BSC All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type F) Dimensions Value (in mm) C 0.650 X 0.400 X1 0.480 X2 0.950 X3 1.700 Y 0.425 Y1 0.800 Y2 1.150 Y3 1.450 Y4 2.300 D E e b L A Seating Plane z(4x) E2a D2a e3 e4 k Pin1 Y4Y2 YXC
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