DMT10H032LFVW DIODES | Alldatasheet
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Technical content
Document number: DS41982 Rev. 2 - 2 1 of 7 www.diodes.com December 2019 © Diodes Incorporated DMT10H032LFVW 100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS RDS(ON) MAX ID MAX TC = +25° C 100V 32m @ VGS = 10V 17A 50m @ VGS = 4.5V 13A
Description
This MOSFET is designed to minimize the on -state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Applications
Backlighting Power Management Functions DC-DC Converters Features and Benefits 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application Small Form Factor Thermally Efficient Package Enables Higher Density End Products Wettable Flank for Improved Optical Inspection Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data Case: PowerDI®3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMT10H032LFVW-7 PowerDI3333-8 (SWP) (Type UX) 2,000/Tape and Reel DMT10H032LFVW-13 PowerDI3333-8 (SWP) (Type UX) 3,000/Tape and Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information PowerDI3333-8 (SWP) (Type UX) 36W YYWW Equivalent Circuit Top View D D D D G S S S Bottom View Pin1 D S G 36W = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 19 = 2019) WW = Week Code (01 to 53) PowerDI is a registered trademark of Diodes Incorporated. PowerDI3333-8 (SWP) (Type UX)
Document number: DS41982 Rev. 2 - 2 2 of 7 www.diodes.com December 2019 © Diodes Incorporated DMT10H032LFVW Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 7) VGS = 10V TC = +25° C ID A TC = +70° C 13 Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 68 A Maximum Continuous Body Diode Forward Current (Note 7) IS 17 A Pulsed Body Diode Forward Current (Note 8) ISM 68 A Avalanche Current, L = 0.3mH (Note 8) IAS 13 A Avalanche Energy, L = 0.3mH (Note 8) EAS 25.3 mJ Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 1.3 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RJA 92 ° C/W Total Power Dissipation (Note 6) PD 2.5 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RJA 49 ° C/W Thermal Resistance, Junction to Case (Note 7) RJC 8.9 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BVDSS 100 — — V VGS = 0V, ID = 1mA Zero Gate Voltage Drain Current IDSS — — 1 µA VDS = 80V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 9) Gate Threshold Voltage VGS(TH) 1.3 — 2.5 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) — 22 32 mΩ VGS = 10V, ID = 10A — 30 50 VGS = 4.5V, ID = 5A Diode Forward Voltage VSD — 0.8 1 V VGS = 0V, IS = 6A DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss — 683 — pF VDS = 50V, VGS = 0V, f = 1MHz Output Capacitance Coss — 165 — pF Reverse Transfer Capacitance Crss — 6.9 — pF Gate Resistance Rg — 1.2 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg — 6.3 — nC VDS = 50V, ID = 6A Total Gate Charge (VGS = 10V) Qg — 11.9 — nC Gate-Source Charge Qgs — 2.0 — nC Gate-Drain Charge Qgd — 3.1 — nC Turn-On Delay Time tD(ON) — 4.1 — ns VDS = 50V, RL = 5.85Ω VGS = 10V, Rg = 3Ω Turn-On Rise Time tR — 4.5 — ns Turn-Off Delay Time tD(OFF) — 12.5 — ns Turn-Off Fall Time tF — 9.3 — ns Reverse Recovery Time tRR — 31.5 — ns IF = 6A, di/dt = 500A/μs Reverse Recovery Charge QRR — 94.6 — nC Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1 -inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25° C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing.
Figure 13. Transient Thermal Resistance
Document number: DS41982 Rev. 2 - 2 6 of 7 www.diodes.com December 2019 © Diodes Incorporated DMT10H032LFVW Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 (SWP) (Type UX) PowerDI3333-8 (SWP) (Type UX) Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 -- b 0.25 0.40 0.32 c 0.10 0.25 0.15 D 3.20 3.40 3.30 D1 2.95 3.15 3.05 D2 2.30 2.70 2.50 E 3.20 3.40 3.30 E1 2.95 3.15 3.05 E2 1.60 2.00 1.80 E3 0.95 1.35 1.15 E4 0.10 0.30 0.20 e -- -- 0.65 k 0.50 0.90 0.70 L 0.30 0.50 0.40 θ 0° 12° 10° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 (SWP) (Type UX) Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.600 X4 3.500 Y 0.700 Y1 0.550 Y2 1.650 Y3 0.600 Y4 2.450 Y5 0.400 Y6 3.700 X1 X2 Y C X D EE1 A c L L b e k Detail A Detail A 0.050 0.150
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