DMT10H015LCG
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- Manufacturer or author: Diodes Incorporated
- PDF pages: 7
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Document number: DS38362 Rev. 4 - 2 1 of 7 www.diodes.com July 2018 © Diodes Incorporated DMT10H015LCG 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) Max ID Max TC = +25° C 100V 15mΩ @ VGS = 10V 34A 19.5mΩ @ VGS = 6V 32A Description and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize R DS(ON) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Load switch. Backlighting Power Management Functions DC-DC Converters Features and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production High Conversion Efficiency Low RDS(ON) – Minimizes On State Losses Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Case: V-DFN3333-8 (Type B) Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Below Diagram Terminals: Finish –NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.03 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMT10H015LCG-7 V-DFN3333-8 (Type B) 2,000/Tape & Reel DMT10H015LCG-13 V-DFN3333-8 (Type B) 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain < 900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information Top View Internal Schematic Top View D S G Equivalent Circuit T10 = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 18 = 2018) WW = Week (01 to 53) G S S S D D D D Pin 1 Bottom View
Document number: DS38362 Rev. 4 - 2 2 of 7 www.diodes.com July 2018 © Diodes Incorporated DMT10H015LCG Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current, VGS = 10V (Note 6) Steady State TA = +25C TA = +70C ID 9.4 7.5 A Continuous Drain Current, VGS = 10V Steady State TC = +25C TC = +100C ID 34 21 A Maximum Continuous Body Diode Forward Current (Note 6) IS 1.6 A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) IDM 54 A Avalanche Current, L = 3mH (Note 8) IAS 7.5 A Avalanche Energy, L = 3mH (Note 8) EAS 85 mJ Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 1 W Thermal Resistance, Junction to Ambient (Note 5) RJA 118 ° C/W Total Power Dissipation (Note 6) PD 2.1 W Thermal Resistance, Junction to Ambient (Note 6) RJA 59 ° C/W Thermal Resistance, Junction to Case RJC 4.5 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 100 — — V VGS = 0V, ID = 1mA Zero Gate Voltage Drain Current IDSS — — 1 µ A VDS = 80V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 1.4 2 3.5 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) — 12.1 15 mΩ VGS = 10V, ID = 20A — 15 19.5 VGS = 6V, ID = 20A — 18.9 26 mΩ VGS = 4.5V, ID = 5A Diode Forward Voltage VSD — 0.9 1.3 V VGS = 0V, IS = 20A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 1871 — pF VDS = 50V, VGS = 0V f = 1MHz Output Capacitance Coss — 261 — Reverse Transfer Capacitance Crss — 6.9 — Gate Resistance Rg — 0.75 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg — 33.3 — nC VDD = 50V, ID = 10A, VGS = 10V Gate-Source Charge Qgs — 6.9 — Gate-Drain Charge Qgd — 5.1 — Turn-On Delay Time tD(ON) — 6.5 — ns VDD = 50V, VGS = 10V, ID = 10A, Rg = 6Ω Turn-On Rise Time tR — 7 — Turn-Off Delay Time tD(OFF) — 19.7 — Turn-Off Fall Time tF — 8.1 — Reverse Recovery Time tRR — 37.9 — ns IF = 10A, di/dt = 100A/µs Reverse Recovery Charge QRR — 51.9 — nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate . 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.
Figure 13. Transient Thermal Resistance
Document number: DS38362 Rev. 4 - 2 6 of 7 www.diodes.com July 2018 © Diodes Incorporated DMT10H015LCG Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. V-DFN3333-8 (Type B) V-DFN3333-8 (Type B) Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 -- -- 0.203 b 0.27 0.37 0.32 D 3.25 3.35 3.30 D2 2.17 2.37 2.27 E 3.25 3.35 3.30 E2 1.85 2.05 1.95 e -- -- 0.65 k -- -- 0.33 L 0.35 0.45 0.40 L1 -- -- 0.34 z -- -- 0.515 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. V-DFN3333-8 (Type B) Dimensions Value (in mm) C 0.650 C1 1.950 G 0.650 X 0.420 X1 2.370 Y 0.700 Y1 0.400 Y2 2.150 Y3 0.450 k A D E e b L z Seating Plane G C X Y
Document number: DS38362 Rev. 4 - 2 7 of 7 www.diodes.com July 2018 © Diodes Incorporated DMT10H015LCG IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products d escribed herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, internation al or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into mul tiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be pr ovided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2018, Diodes Incorporated www.diodes.com