DMS3016SFG-7

DMS3016SFG DIODES | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 7

Technical content

POWERDI is a registered trademark of Diodes Incorporated. DMS3016SFG Document number: DS35434 Rev. 7 - 2 1 of 7 www.diodes.com October 2012 © Diodes Incorporated DMS3016SFG N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI® Product Summary V(BR)DSS R DS(on) max ID TA = 25°C 30V 13mΩ @ VGS = 10V 10.2A 16mΩ @ VGS = 4.5V 9.3A

Description

This new generation MOSFET has been designed to minimize the on- state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications

• DC-DC Converters
• Power management functions
• Analog Switch Features and Benefits
• DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:
• Low RDS(ON) – minimize conduction losses
• Low VSD – reducing the losses due to body diode conduction
• Low Qrr – lower Qrr of the integrated Schottky reduces body diode switching losses
• Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot- through or cross conduction currents at high frequencies
• Avalanche rugged – IAR and EAR rated
• Small form factor thermally efficient package enables higher density end products
• Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
• Case: POWERDI3333-8
• Case Material: Molded Plastic, “Green” Molding Compound.
• UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.072 grams (approximate) Ordering Information (Note 4) Part Number Case Packaging DMS3016SFG-7 POWERDI3333-8 2,000/Tape & Reel DMS3016SFG-13 POWERDI3333-8 3,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoH S 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com for more in formation about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. S S S G D D D D Pin 1 Top View Bottom View 1 234 8765 Source Gate Drain Top View Pin Configuration Internal Schematic POWERDI3333-8 Green

POWERDI is a registered trademark of Diodes Incorporated. DMS3016SFG Document number: DS35434 Rev. 7 - 2 2 of 7 www.diodes.com October 2012 © Diodes Incorporated DMS3016SFG Marking Information Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 5) VGS = 10V Steady State TA = +25°C TA = +70°C ID 7.0 5.5 A Continuous Drain Current (Note 5) VGS = 4.5V Steady State TA = +25°C TA = +70°C ID 6.4 5.1 A Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 10.2 8.1 A Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25°C TA = +70°C ID 9.3 7.4 A Pulsed Drain Current (10us pulse, duty cycle=1%) IDM 80 A Avalanche Current (Note 7) IAR 13 A Repetitive Avalanche Energy (Note 7) L = 0.3mH EAR 24 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD 0.98 2.08 W (Note 6) Thermal Resistance, Junction to Ambient (Note 5) RθJA 127 60 °C/W (Note 6) Thermal Resistance, Junction to Case (Note 6) RθJC 3.42 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 7 .IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C V , DRAIN-SOURCE VOLTAGE (V)DS Fig. 1 SOA, Safe Operation Area I , DRAIN CURRENT (A)D 0.01 0.1 100 1,000 0.01 0.1 1 10 100 I( A ) @ P = 1 0 sDW I (A) @ DC D I( A ) @ P = 1 sDW I( A ) @ P = 1 0 0 m sDW I( A ) @ P = 1 0 m sDW T = 150 C T= 2 5 C Single Pulse J(MAX) A I( A ) @ P = 1 m sDW I( A ) @ P= 1 0 µ s D W I( A ) @ P = 1 0 0 µ sDW R Limited DS(ON) t1, PULSE DURATION TIME (sec) Fig. 2 Single Pulse Maximum Power Dissipation 0.001 0.01 0.1 1 10 100 1,0000.0001 100P , PEAK TRANSIENT POIWER (W)(PK) Single Pulse R = 5 4 C / W R = r * R T - T = P * R θ θθ θ JA JA(t) (t) JA JA J A ( t ) S30 YYWW S30 = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 09 = 2009) WW = Week code (01 ~ 53)

POWERDI is a registered trademark of Diodes Incorporated. DMS3016SFG Document number: DS35434 Rev. 7 - 2 3 of 7 www.diodes.com October 2012 © Diodes Incorporated DMS3016SFG 0.001 0.01 0.1 t1, PULSE DURATION TIMES (sec) Fig. 3 Transient Thermal Resistance R( t ) = r ( t ) * RθJA R = 54°C/W Duty Cycle, D = t1/ t2 θ θ JA JA r(t), TRANSIENT THERMAL RESISTANCE D = 0.9 D = 0.7 D = 0.5 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 Single Pulse Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 30 ⎯ ⎯ V VGS = 0V, ID = 1mA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 100 µA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±12V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) 1.0 ⎯ 2.2 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) ⎯ 10 13 mΩ VGS = 10V, ID = 11.2A ⎯ 12 16 VGS = 4.5V, ID = 10.A Forward Transfer Admittance |Yfs| ⎯ 25 ⎯ S VDS = 5V, ID = 11.2A Diode Forward Voltage VSD ⎯ 0.37 0.6 V VGS = 0V, IS = 1A Maximum Body-Diode + Schottky Continuous Current IS ⎯ ⎯ 5 A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss ⎯ 1886 ⎯ pF VDS = 15V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ 372 ⎯ Reverse Transfer Capacitance Crss ⎯ 128 ⎯ Gate Resistance RG ⎯ 2.0 ⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 4.5V) Qg ⎯ 19.5 ⎯ nC VDS = 15V, VGS = 10V ID = 11.2A Total Gate Charge (VGS = 10V) Qg ⎯ 44.6 ⎯ Gate-Source Charge Qgs ⎯ 4.8 ⎯ Gate-Drain Charge Qgd ⎯ 4.6 ⎯ Turn-On Delay Time tD(on) ⎯ 5.8 ⎯ ns VGS = 10V, VDD = 15V, RG = 3Ω, RL = 1.2Ω Turn-On Rise Time tr ⎯ 23.7 ⎯ Turn-Off Delay Time tD(off) ⎯ 35.4 ⎯ Turn-Off Fall Time tf ⎯ 7.7 ⎯ Notes: 8 .Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing.

POWERDI is a registered trademark of Diodes Incorporated. DMS3016SFG Document number: DS35434 Rev. 7 - 2 4 of 7 www.diodes.com October 2012 © Diodes Incorporated DMS3016SFG 0 0.5 1 1.5 2 Fig. 4 Typical Output Characteristics V , DRAIN-SOURCE VOLTAGE (V)DS 30I, D RAIN CURRENT (A)D V = 2.0VGS V = 2.2VGS V = 2.5VGS V = 3.0VGS V = 10VGS V = 1.8VGS Fig. 5 Typical Transfer Characteristic V , GATE-SOURCE VOLTAGE (V)GS 0 1 1.5 2 3.530.5 30I, D RAIN CURRENT (A)D V = 5 VDS 42.5 V = 85°CGS V = 125°CGS V = 25°CGS V = - 5 5 ° CGS V = 150°CGS 01 0 2 015 25 30 Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage I , DRAIN-SOURCE CURRENT (A)D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 V = 4.5VGS V = 10VGS 0 5 10 15 20 25 30 I , DRAIN CURRENT (A)D Fig. 7 Typical On-Resistance vs. Drain Current and T emperature R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω T = 85°CA T = 25°CA T = -55°CA T = 150°CA V = 4.5VGS T = 125°CA 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0.022 0.024 Fig. 8 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DSON V = 4 . 5 V I = 5 A GS D V = 1 0 V I = 10A GS D 0.5 0.7 0.9 1.1 1.3 1.5 1.7 Fig. 9 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A R , DRAIN-SOURCE ON-RESISTANCE ( )DSON Ω 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 V = 4 . 5 V I = 5 A GS D V = 10V I = 1 0 A GS D

POWERDI is a registered trademark of Diodes Incorporated. DMS3016SFG Document number: DS35434 Rev. 7 - 2 5 of 7 www.diodes.com October 2012 © Diodes Incorporated DMS3016SFG Fig. 10 Gate Threshold Variation vs. Ambient Temperature T , AMBIENT TEMPERATURE (°C)A V , GATE THRESHOLD VOLTAGE (V)GS(TH) I = 100mAD 0.5 1.5 -50 -25 0 25 50 75 100 125 Fig. 11 Diode Forward Voltage vs. Current V , SOURCE-DRAIN VOLTAGE (V)SD I, S OURCE CURRENT (A)S T = 2 5 ° CA Fig. 12 Typical Total Capacitance V , DRAIN-SOURCE VOLTAGE (V)DS 1,000 10,000C, CAPACITANCE (pF) 100 f = 1MHz 0 2 4 6 81 01 21 41 6 CISS CRSS COSS 01 02 0 3 0 Fig. 13 Typical Drain-Source Leakage Current vs. Voltage V , DRAIN-SOURCE VOLTAGE (V) DS 100 1,000 10,000I , LEAKA GE CURRENT (µA) DSS T = 2 5 ° CA T = 8 5 ° CA T = 125°CA T = 150°CA 0 5 10 15 20 25 30 35 40 45 Fig. 14 Gate-Charge Characteristics Q , TOTAL GATE CHARGE (nC) g 10V, GATE-SOURCE VOLTAGE (V) GS V = 15V I = 11.2A DS D

POWERDI is a registered trademark of Diodes Incorporated. DMS3016SFG Document number: DS35434 Rev. 7 - 2 6 of 7 www.diodes.com October 2012 © Diodes Incorporated DMS3016SFG Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. POWERDI3333-8 Dim Min Max Typ D 3.25 3.35 3.30 E 3.25 3.35 3.30 D2 2.22 2.32 2.27 E2 1.56 1.66 1.61 A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 − − 0.203 b 0.27 0.37 0.32 b2 − − 0.20 L 0.35 0.45 0.40 L1 − − 0.39 e − − 0.65 Z − − 0.515 All Dimensions in mm Dimensions Value (in mm) C 0.650 G 0.230 G1 0.420 Y 3.700 Y1 2.250 Y2 1.850 Y3 0.700 X 2.370 X2 0.420 A D E (4x) L (4x) (3x) b (8x)eZ (4x) Pin 1 ID 14 X Y X2 C G

POWERDI is a registered trademark of Diodes Incorporated. DMS3016SFG Document number: DS35434 Rev. 7 - 2 7 of 7 www.diodes.com October 2012 © Diodes Incorporated DMS3016SFG IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of t his document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated www.diodes.com