DMS3012SFG
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 8
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DIOFET Utilizes a Unique Patented Process to Monolithically Integrate a MOSFET and a Schottky in a Single Die to Deliver: Low RDS(ON) – Minimize Conduction Losses Low V SD – Reducing The Losses Due to Body Diode Conduction Low Q rr – Lower Qrr of the Integrated Schottky Reduces Body Diode Switching Losses Low Gate Capacitance (Qg/Qgs) Ratio – Reduces Risk of Shoot Through or Cross Conduction Currents at High Frequencies Small Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies just 33% of the Board Area Occupied by SO-8, Enabling Smaller End Product 100% UIS (Avalanche) Rated 100% Rg Tested Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: PowerDI3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMS3012SFG-7 PowerDI3333-8 2000/Tape & Reel DMS3012SFG-13 PowerDI3333-8 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlori ne (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Bottom View 1 2 3 4 8 7 6 5 Top View Pin Configuration Internal Schematic Source Gate Drain S S S G D D D D Pin 1 Top View NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART PowerDI is a registered trademark of Diodes Incorporated. PowerDI3333-8
Document number: DS35441 Rev. 9 - 3 2 of 8 www.diodes.com August 2018 © Diodes Incorporated DMS3012SFG Marking Information Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25° C TA = +70° C ID 12 9.5 A t < 10s TA = +25° C TA = +70° C ID 16.0 12.7 A Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25° C TA = +70° C ID 9.5 7.5 A t < 10s TA = +25° C TA = +70° C ID 13.0 10.3 A Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) IDM 90 A Maximum Continuous Body Diode Forward Current (Note 6) IS 3.5 A Avalanche Current (Note 7) L = 0.1mH IAS 17 A Avalanche Energy (Note 7) L = 0.1mH EAS 43 mJ Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25° C PD 0.89 W TA = +70°C 0.55 Thermal Resistance, Junction to Ambient (Note 5) Steady State RJA 145 ° C/W t < 10s 74 Total Power Dissipation (Note 6) TA = +25° C PD 2.2 W TA = +70°C 1.3 Thermal Resistance, Junction to Ambient (Note 6) Steady State RJA 58 ° C/W t < 10s 31 Thermal Resistance, Junction to Case (Note 6) RJC 11 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep T J = +25°C. N12 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 18 = 2018) WW = Week Code (01 to 53) N12 YYWW NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART
Document number: DS35441 Rev. 9 - 3 3 of 8 www.diodes.com August 2018 © Diodes Incorporated DMS3012SFG 0.1 1 10 100 -V , DRAIN-SOURCE VOLTAGE (V) Fig. 1 SOA, Safe Operation Area DS 0.01 0.1 100-I , DRAIN CURRENT (A)D t1, PULSE DURATION TIME (sec) Fig. 2 Single Pulse Maximum Power Dissipation 100 0.001 0.01 0.1 1 10 100 1,000 Single Pulse R = 61 C/W R = r * R T - T = P * R JA JA(t) (t) JA J A JA(t) 0.0001 P , PEAK TRANSIENT POIWER (W)(PK) t1, PULSE DURATION TIME (sec) Fig. 3 Transient Thermal Resistance 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE R = r * RJA(t) (t) JA JAR = 61 C/W Duty Cycle, D = t1/t2 D = 0.5 D = 0.7 D = 0.9 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART
Document number: DS35441 Rev. 9 - 3 4 of 8 www.diodes.com August 2018 © Diodes Incorporated DMS3012SFG Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS — — 100 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) 1.0 1.5 2.5 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 7.3 10 mΩ VGS = 10V, ID = 13.5A — 10 15 VGS = 4.5V, ID = 11A Forward Transfer Admittance |Yfs| — 30 — S VDS = 5V, ID = 10.0A Diode Forward Voltage VSD — 0.45 0.55 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 1296 4310 pF VDS = 15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 415 — pF Reverse Transfer Capacitance Crss — 204 — pF Gate Resistance Rg 0.26 1.6 2.6 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge VGS = 4.5V Qg — 14.7 — nC VDS = 15V, VGS = 10V, ID = 13.5A Total Gate Charge VGS = 10V Qg — 31.6 — nC Gate-Source Charge Qgs — 3.5 — nC Gate-Drain Charge Qgd — 5.0 — nC Turn-On Delay Time tD(on) — 15.8 — ns VGS = 10V, VDS = 15V, Rg = 3Ω, ID = 8.8A Turn-On Rise Time tr — 27.8 — ns Turn-Off Delay Time tD(off) — 29.7 — ns Turn-Off Fall Time tf — 13.6 — ns Reverse Recovery Time trr — 13.1 — ns IF = 13.5A, di/dt = 100A/μs Reverse Recovery Charge Qrr — 4.3 — nC IF = 13.5A, di/dt = 100A/μs Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 0 0.5 1 1.5 2 Fig. 4 Typical Output Characteristic V , DRAIN-SOURCE VOLTAGE (V)DS 30I , DRAIN CURRENT (A)D V = 2.0VGS V = 2.5VGS V = 3.0VGS V = 3.5VGS V = 4.5VGS V = 4.0VGS I D R A I N C U R R E N T ( A ) D Fig. 5 Typical Transfer Characteristic V , GATE-SOURCE VOLTAGE (V) GS V = 85° C GS V = 125° C GS V = 25° C GS V = -55° C GS V = 150° C GS V = 5V DS ID, DRAIN CURRENT (A) NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART
Document number: DS35441 Rev. 9 - 3 5 of 8 www.diodes.com August 2018 © Diodes Incorporated DMS3012SFG 0 10 2015 25 30 Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage I , DRAIN-SOURCE CURRENT (A)D 0.05R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) 0.04 0.01 0.02 0.03 V = 2.5VGS V = 4.5VGS V = 10VGS -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE ( 癈)A Fig. 8 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DSON 0.6 0.8 1.0 1.2 1.4 1.6 V = 10V I = 5A GS D V = 10V I = 10A GS D Fig. 9 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE ( 癈)A 0.01 0.03R , DRAIN-SOURCE ON-RESISTANCE ( )DSON R , DRAIN-SOURCE ON-RESISTANCE ( )DSON 0.02 V = 10V I = 10A GS D V = 10V I = 5A GS D Fig. 10 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE ( 癈 )A 0.5 1.0 1.5 2.0 2.5 3.0 V , GATE THRESHOLD VOLTAGE (V)GS(TH) I = 1mAD I = 250 礎D Fig. 11 Diode Forward Voltage vs. Current V , SOURCE-DRAIN VOLTAGE (V)SD 0.2 I , SOURCE CURRENT (A)S T = 25 癈A 0 5 10 15 20 25 30 I , DRAIN CURRENT (A) D Fig. 7 Typical On-Resistance vs. Drain Current and Temperature R D R A I N - S O U R C E O N - R E S I S T A N C E ( D S ( O N ) T = 85° C A T = 25° C A T = -55° C A T = 150° C A V = 10V GS T = 125° C A RDS(ON), DRAIN-SOURCE ON-RESISTANCE () (°C) (°C) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) (°C) TA = 25°C ID = 250A RDS(ON), DRAIN-SOURCE ON-RESISTANCE () NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART
Document number: DS35441 Rev. 9 - 3 6 of 8 www.diodes.com August 2018 © Diodes Incorporated DMS3012SFG 0 5 10 15 20 1,000 10,000C, CAPACITANCE (pF) 100 Fig. 12 Typical Total Capacitance V , DRAIN-SOURCE VOLTAGE (V)DS Ciss Crss Coss f = 1MHz 0 5 10 15 20 25 30 35 Q , OTAL GATE CHARGE (nC) Fig. 14 Gate-Source Voltage vs. Total Gate Charge g T V , ATE-SOURCE VOLTAGE (V)GS G V = 15V I = 13.5A DS D 0 10 20 30 Fig. 13 Typical Leakage Current vs. Drain-Source Voltage V , DRAIN-SOURCE VOLTAGE (V) DS 100 1,000 10,000 I L E A K A G E C U R R E N T ( µ A ) D S S T = 25° C A T = 85° C A T = 125° C A T = 150° C A IDSS, LEAKAGE CURRENT (A) NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART
Document number: DS35441 Rev. 9 - 3 7 of 8 www.diodes.com August 2018 © Diodes Incorporated DMS3012SFG Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 PowerDI3333-8 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.15 0.25 0.20 D 3.25 3.35 3.30 D2 2.22 2.32 2.27 E 3.25 3.35 3.30 E2 1.56 1.66 1.61 E3 0.79 0.89 0.84 E4 1.60 1.70 1.65 e 0.65 L 0.35 0.45 0.40 L1 0.39 z 0.515 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 Y4 0.540 D E e b A Pin #1 ID Seating Plane L(4x) L1(3x) b2(4x) z(4x) X Y C NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART
Document number: DS35441 Rev. 9 - 3 8 of 8 www.diodes.com August 2018 © Diodes Incorporated DMS3012SFG IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document an d any product described herein. Diodes Incorporated do es not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, internation al or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into mul tiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be p rovided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2018, Diodes Incorporated www.diodes.com NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART