DMS2120LFWB

Document overview

  • Manufacturer or author: Diodes Incorporated
  • PDF pages: 7

Technical content

Features

  • Low On-Resistance
  • 95m Ω @VGS = -4.5V
  • 120m Ω @VGS = -2.5V
  • 150m Ω (typ) @VGS = -1.8V
  • Low Gate Threshold Voltage, -1.3V Max
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Incorporates Low V F Super Barrier Rectifier (SBR)
  • Low Profile, 0.5mm Max Height
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
  • Case: U-DFN3020-8 Type B
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Connections: See Diagram
  • Terminals: Finish – NiPdAu annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4
  • Weight: 0.011 grams (approximate) Ordering Information (Note 4) Part Number Case Packaging DMS2120LFWB-7 DFN3020B-8 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directiv e 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more in formation about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information Date Code Key Year 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 Code V W X Y Z A B C D E Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Bottom View Pin ConfigurationTop View Bottom View A A S G K K D D MF = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) YMMF U-DFN3020-8 Type B S G D A K Equivalent Circuit

SBR is a registered trademark of Diodes Incorporated. DMS2120LFWB Document number: DS31667 Rev. 5 - 2 2 of 7 www.diodes.com September 2012 © Diodes Incorporated DMS2120LFWB NEW PRODUCT Maximum Ratings – TOTAL DEVICE (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 1.5 W Thermal Resistance, Junction to Ambient RθJA 85 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Maximum Ratings – P-CHANNEL MOSFET – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Drain Current (Note 5) ID -2.9 A Pulsed Drain Current (Note 6) IDM -10 A Maximum Ratings – SBR – D1 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 20 V RMS Reverse Voltage VR(RMS) 14 V Average Rectified Output Current IO 1 A Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load IFSM 3 A Electrical Characteristics – P-CHANNEL MOSFET – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -20 ⎯ ⎯ V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1 μA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS ⎯ ±100 ±800 nA VGS = ±8V, VDS = 0V VGS = ±12V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) -0.45 ⎯ -1.3 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) 100 120 150 mΩ VGS = -4.5V, ID = -2.8A VGS = -2.5V, ID = -2.0A VGS = -1.8V, ID = -1.0A Forward Transfer Admittance |Yfs| ⎯ 8 ⎯ S VDS = -5V, ID = -2.8A Diode Forward Voltage (Note 7) VSD ⎯ 0.42 -1.2 V VGS = 0V, IS = -1.0A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 632 ⎯ pF VDS = -10V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ 65 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 54 ⎯ pF Electrical Characteristics – SBR – D1 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 7) V(BR)R 20 ⎯ ⎯ V IR = 1mA Forward Voltage VF ⎯ 0.45 0.52 V IF = 0.5A IF = 1.0A Reverse Current (Note 7) IR ⎯ ⎯ 80 μA VR = 20V Notes: 5. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect.

SBR is a registered trademark of Diodes Incorporated. DMS2120LFWB Document number: DS31667 Rev. 5 - 2 3 of 7 www.diodes.com September 2012 © Diodes Incorporated DMS2120LFWB NEW PRODUCT Q1, P-CHANNEL MOSFET 01 2 3 45 Fig. 1 Typical Output Characteristics -V , DRAIN-SOURCE VOLTAGE (V)DS 10-I , D RAIN CURRENT (A)D V = - 1 . 5 VGS V = - 2 . 0 VGS V = - 2 . 5 VGS V = - 4 . 5 VGS V = - 8 . 0 VGS V = - 1 . 0 VGS V = - 1 . 2 VGS 0.5 1 1.5 2 10-I , D RAIN CURRENT (A)D Fig. 2 Typical Transfer Characteristics -V , GATE SOURCE VOLTAGE (V)GS V = - 5 VDS T = -55°CA T = 2 5 ° CA T = 85°CA T = 1 5 0 ° CA T = 1 2 5 ° CA 0.02 0.04 0.06 0.08 0.1 0.12 0.14 01234567 8 Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage -I , DRAIN CURRENT (A)D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω V = -2.5VGS V = -4.5VGS V = -1.8VGS 0.02 0.04 0.06 0.08 0.1 0.12 0.14 012 34 5678 -I , DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and T emperature D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω T = -55°CA T = 2 5 ° CA T = 8 5 ° CA T = 1 2 5 ° CA T = 150°CA Fig. 5 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)J 0.6 0.8 1.0 1.2 1.4 1.6 R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DS(ON) V = - 4 . 5 V I = - 5 A GS D V = - 2 . 5 V I = - 2 A GS D 0.03 0.05 0.07 0.09 0.11 Fig. 6 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)J R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Ω V = - 4 . 5 V I = - 5 A GS D V = - 2 . 5 V I = - 2 A GS D

SBR is a registered trademark of Diodes Incorporated. DMS2120LFWB Document number: DS31667 Rev. 5 - 2 4 of 7 www.diodes.com September 2012 © Diodes Incorporated DMS2120LFWB NEW PRODUCT 100 1,000 10,000C, CAPACITANCE (pF) 048 1 2 1 6 2 0 Fig. 7 Typical Capacitance -V , DRAIN-SOURCE VOLTAGE (V)DS f = 1MHz Ciss Coss Crss Fig. 8 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -V , GATE THRESHOLD VOLTAGE (V)GS(TH) I = -250µAD I = - 1 m AD -V , SOURCE-DRAIN VOLTAGE (V)SD Fig. 9 Diode Forward Voltage vs. Current 10-I , S OURCE CURRENT (A)S T = 2 5 ° CA

SBR is a registered trademark of Diodes Incorporated. DMS2120LFWB Document number: DS31667 Rev. 5 - 2 5 of 7 www.diodes.com September 2012 © Diodes Incorporated DMS2120LFWB NEW PRODUCT D1, SBR Fig. 10 Forward Power Dissipation 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.5 1 1.5 I , AVERAGE FORWARD CURRENT (A) F(AV) P , POWER DISSIPATION (W)D Fig. 11 Typical Forward Characteristics 0.0001 0.001 0.01 0.1 T = -55°CA T = 2 5 ° CA T = 8 5 ° CA T = 150°CA T = 125°CA 0.8 V , INSTANTANEOUS FORWARD VOLTAGE (V)F I , INSTANTANEOUS FORWARD CURRENT (A)F Fig. 12 Typical Reverse Characteristics 0.01 0.1 100 1,000 10,000 0 5 10 15 20 25 30 35 40 V , INSTANTANEOUS REVERSE VOLTAGE (V)R I , INSTANTANEOUS REVERSE CURRENT(uA)R T = 25°CA T = 85°CA T = 150°CA T = 125°CA Fig. 13 Total Capacitance vs. Reverse Voltage V , DC REVERSE VOLTAGE (V)R 100 1,000 10,000 0.1 1 10 100 C, CAPACITANCE (pF) f = 1MHz Fig. 14 Forward Current Derating Curve 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25 50 75 100 125 150 175 T , AMBIENT TEMPERATURE (°C)A I , AVERAGE FORWARD CURRENT (A)F(AV) Note 5 Fig. 15 Operating Temperature Derating 100 125 150 01 0 2 0 3 0 4 0 V , DC REVERSE VOLTAGE (V)R T , DERATED AMBIENT TEMPERATURE (°C)A

SBR is a registered trademark of Diodes Incorporated. DMS2120LFWB Document number: DS31667 Rev. 5 - 2 6 of 7 www.diodes.com September 2012 © Diodes Incorporated DMS2120LFWB NEW PRODUCT Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. U-DFN3020-8 Type B Dim Min Max Typ A 0.77 0.83 0.80 A1 0 0.05 0.02 A3 - - 0.15 b 0.25 0.35 0.30 D 2.95 3.075 3.00 D2 0.82 1.02 0.92 D4 1.01 1.21 1.11 e - - 0.65 E 1.95 2.075 2.00 E2 0.43 0.63 0.53 L 0.25 0.35 0.30 Z - - 0.375 All Dimensions in mm Dimensions Value (in mm) a 0.09 b 0.365 C 0.65 G 0.285 X1 0.4 X2 1.12 Y1 0.5 Y2 0.73 b e L D E A Z D4 D4 C a b G

SBR is a registered trademark of Diodes Incorporated. DMS2120LFWB Document number: DS31667 Rev. 5 - 2 7 of 7 www.diodes.com September 2012 © Diodes Incorporated DMS2120LFWB NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated www.diodes.com