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DMS05N60 N-Channel Depletion-Mode MOSFET ©Bruckewell Technology Corporation Rev. A -2012 FEATURES • Depletion Mode (Normally On) • Advanced Planar Technology • Rugged Poly-silicon Gate Cell Structure • Fast Switching Speed • RoHS Compliant/Lead Free • ESD Sensitive Applications • Normally-on Switches • SMPS start-up Circuit • Linear Amplifier • Converters • Constant Current Source • Telecom BVDSX RDS(ON) (Max.) IDSS,min 600V 700Ω 12mA Caution: Stresses greater than those listed in the “Absolute Maximum Ratings “may cause permanent damage to the device. Thermal Characteristics Symbol Parameter DMS05N60 Unit RθJA Thermal Resistance, Junction-to-Ambient 250 K/W
DMS05N60 N-Channel Depletion-Mode MOSFET ©Bruckewell Technology Corporation Rev. A -2012
DMS05N60 N-Channel Depletion-Mode MOSFET ©Bruckewell Technology Corporation Rev. A -2012
- Characteristic Curves