DMPH3010LK3Q

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  • Manufacturer or author: Diodes Incorporated
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Document number: DS38126 Rev. 1 - 2 1 of 7 www.diodes.com August 2016 © Diodes Incorporated DMPH3010LK3Q 175° C P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) max ID TC = +25°C -30V 7.5mΩ @ VGS = -10V -50A 10mΩ @ VGS = -4.5V -45A Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC -Q101, supported up by a PPAP and is ideal for use in:  DC-DC Converters  Power Management Functions  Reverse Polarity Protection Features and Benefits  Rated to +175° C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switch (UIS) Test in Production  Low On-resistance  Fast Switching Speed  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Mechanical Data  Case: TO252 (DPAK)  Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram  Terminals: Finish – Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.33 grams (Approximate) Ordering Information (Note 5) Part Number Case Packaging DMPH3010LK3Q-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain < 900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information G S D D Green D S G Equivalent Circuit Top View Pin-Out Top View TO252 (DPAK) YYWW H3010L . = Manufacturer’s Marking H3010L = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 to 53)

Document number: DS38126 Rev. 1 - 2 2 of 7 www.diodes.com August 2016 © Diodes Incorporated DMPH3010LK3Q Maximum Ratings (@ TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 8) VGS = -10V Steady State TC = +25° C TC = +100°C ID -50 -40 A Continuous Drain Current (Note 7) VGS = -10V Steady State TA = +25° C TA = +100°C ID -16 -11 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM -100 A Maximum Body Diode Continuous Current (Note 7) IS -3.5 A Avalanche Current (Note 9) IAS -47 A Avalanche Energy (Note 9) EAS 113 mJ Thermal Characteristics (@ TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 6) PD 2.0 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RJA 73 ° C/W Total Power Dissipation (Note 7) PD 3.9 W Thermal Resistance, Junction to Ambient (Note 7) Steady State RJA 38 ° C/W Thermal Resistance, Junction to Case (Note 8) RJC 1.0 Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C Electrical Characteristics (@ TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage BVDSS -30 — — V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS — — -1.0 μA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 10) Gate Threshold Voltage VGS(TH) -1.1 -1.6 -2.1 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS(ON) — 6.2 7.5 mΩ VGS = -10V, ID = -10A Diode Forward Voltage VSD — -0.65 -1.0 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance Ciss — 6807 — pF VDS = -15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 988 — pF Reverse Transfer Capacitance Crss — 647 — pF Gate Resistance Rg — 6.2 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg — 66 — nC VDS = -15V, ID = -10A Total Gate Charge (VGS = -10V) Qg — 139 — nC Gate-Source Charge Qgs — 19.1 — nC Gate-Drain Charge Qgd — 21.7 — nC Turn-On Delay Time tD(ON) — 9.0 — ns VDS = -15V, VGEN = -10V, RG = 6Ω, ID = -1A Turn-On Rise Time tF — 10.5 — ns Turn-Off Delay Time tD(OFF) — 255 — ns Turn-Off Fall Time tF — 95 — ns Body Diode Reverse Recovery Time tRR — 27 — ns IF = -10A, di/dt = -100A/μs Body Diode Reverse Recovery Charge QRR — 21 — nC IF = -10A, di/dt = -100A/μs Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8. Thermal resistance from junction to soldering point (on the exposed drain pad). 9. IAS and EAS rating are based on low frequency and duty cycles to keep T J = +25°C. 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing.

Figure 13. Transient Thermal Resistance

Document number: DS38126 Rev. 1 - 2 6 of 7 www.diodes.com August 2016 © Diodes Incorporated DMPH3010LK3Q Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 - - e - - 2.286 E 6.45 6.70 6.58 E1 4.32 - - H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° - All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) Dimensions Value (in mm) C 4.572 X 1.060 X1 5.632 Y 2.600 Y1 5.700 Y2 10.700 E D b2(2x) b(3x) e c A 7°± 1° H Seating Plane Gauge Plane a 0.508 L 2.74REF X Y C

Document number: DS38126 Rev. 1 - 2 7 of 7 www.diodes.com August 2016 © Diodes Incorporated DMPH3010LK3Q IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product nam es and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this do cument is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further, Cus tomers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com