DMP56D0UFB

DMP56D0UFB

Document overview

• Manufacturer or author: Diodes Incorporated
• PDF pages: 7

Technical content

Document number: DS36175 Rev. 4 - 2 1 of 7 www.diodes.com December 2021 © Diodes Incorporated DMP56D0UFB P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(ON) ID TA = +25°C -50V 6Ω @ VGS = -4 V -200mA 8Ω @ VGS = -2.5V -160mA Description and Applications This new generation MOSFET is designed to minimize the on -state resistance (R DS(on)) and yet maintain superior switching performance, making it ideal for high -efficiency power management applications.  DC-DC Converters  Power Management Functions  Battery Operated Systems and Solid-State Relays Features and Benefits  Low On-Resistance  ESD Protected Gate  Low Input/Output Leakage  Fast Switching Speed  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data  Package: X1-DFN1006-3  Package Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish  NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208  Terminal Connections: See Diagram  Weight: 0.001 grams (Approximate)

Ordering Information

Part Number Package Packing Qty. Carrier DMP56D0UFB-7 X1-DFN1006-3 3,000 Tape & Reel DMP56D0UFB-7B X1-DFN1006-3 10,000 Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. X1-DFN1006-3 Equivalent Circuit Top View Internal Schematic Bottom View D S G Source Gate Protection Diode Gate Drain Body Diode ESD PROTECTED Green

Document number: DS36175 Rev. 4 - 2 2 of 7 www.diodes.com December 2021 © Diodes Incorporated DMP56D0UFB Marking Information DMP56D0UFB-7 DMP56D0UFB-7B Maximum Ratings (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -50 V Gate-Source Voltage VGSS ±8 V Drain Current (Note 5) Steady TA = +25°C ID -200 mA Pulsed Drain Current (Note 6) IDM -700 mA Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD 425 mW Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) RθJA 275 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. Device mounted on FR-4 PCB. t ≤5 sec. 6. Pulse width ≤10µS, Duty Cycle ≤1%. D3 = Part Marking Code Top View Bar Denotes Gate and Source Side Top View Bar Denotes Gate and Source Side From date code 1527 (YYWW), this changes to: Top View Dot Denotes Drain Side

Document number: DS36175 Rev. 4 - 2 3 of 7 www.diodes.com December 2021 © Diodes Incorporated DMP56D0UFB Electrical Characteristics (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -50 — — V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS — — -10 µA VDS = -50V, VGS = 0V Gate-Source Leakage IGSS — — ±1 µA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) -0.5 — -1.2 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS(on) —— 4.6 8 Ω VGS = -4.0V, ID = -100mA VGS = -2.5V, ID = -80mA Forward Transfer Admittance |Yfs| 100 — — mS VDS = -5V, ID = -100mA Diode Forward Voltage (Note 7) VSD — -0.8 -1.2 V VGS = 0V, IS = -100mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 50.54 — pF VDS = -25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 3.49 — pF Reverse Transfer Capacitance Crss — 2.42 — pF Gate Resistance RG — 201 — Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge VGS = 4.5V Qg — 0.58 — nC VDS = -25V, ID = -100mA Gate-Source Charge Qgs — 0.09 — nC Gate-Drain Charge Qgd — 0.14 — nC Turn-On Delay Time tD(on) — 4.46 — nS VDD = -30V, ID = -0.27A, VGEN = -4V, RGEN = 6Ω Turn-On Rise Time tr — 6.63 — nS Turn-Off Delay Time tD(off) — 21.9 — nS Turn-Off Fall Time tf — 15.0 — nS Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing .

Document number: DS36175 Rev. 4 - 2 4 of 7 www.diodes.com December 2021 © Diodes Incorporated DMP56D0UFB 0.0 0.2 0.4 0.6 0.8 -V , DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics DS -I , DRAIN CURRENT (A)D V = 1.5VGS V = 1.2VGS V = 1.8VGS V = 2.5VGS V = 4.0VGS V = 4.5VGS V = 8.0VGS 0.1 0.2 0.3 0.4 -V , GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics GS -I , DRAIN CURRENT (A)D V = -5VDS T = 85°CA T = 150°CA T = 25°CA T = 125°CA T = -55°CA -I , DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistnace vs. Drain Current and Gate Voltage D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON)  V = -2.5VGS V = -4.5VGS V = -4.0VGS V = -8.0VGS -I , DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) 10 T = 150°CA V = -4VGS T = 125°CA T = 85°CA T = 25°CA T = -55°CA 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature J R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DS(ON) V = -4V I = -100mA GS D V = -2.5V I = -100mA GS D -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature J R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON)  9

4 V = -4V,

I = -100mA GS D V = -2.5V, I = -100mA GS D

Document number: DS36175 Rev. 4 - 2 6 of 7 www.diodes.com December 2021 © Diodes Incorporated DMP56D0UFB Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X1-DFN1006-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.00 0.05 0.03 b 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e - - 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 - - 0.40 z 0.02 0.08 0.05 All Dimensions in mm Dimensions Value (in mm) C 0.70 G1 0.30 G2 0.20 X 0.40 X1 1.10 Y 0.25 Y1 0.70 L3 L1L2 e b D E A z Seating Plane Pin #1 ID C X Y

Document number: DS36175 Rev. 4 - 2 7 of 7 www.diodes.com December 2021 © Diodes Incorporated DMP56D0UFB IMPORTANT NOTICE 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTIC ULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operati on of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engi neering customers and users who design with Diodes products. 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