DMP4051LK3 DIODES | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Document Revision: 1 1 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMP4051LK3 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) ID TA = 25°C -40V 51mΩ @ VGS= -10V -10.5A 85mΩ @ VGS= -4.5V -8.4A Description and Applications This new generation MOSFET has been designed to minimize the on- state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

  • Backlighting
  • DC-DC Converters
  • Power management functions Features and Benefits
  • Low on-resistance
  • Fast switching speed
  • “Green” component and RoHS compliant (Note 1) Mechanical Data
  • Case: TO252-3L
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1)
  • Moisture Sensitivity: Level 1 per J-STD-020D
  • Terminals Connections: See Diagram
  • Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
  • Marking Information: See Below
  • Ordering Information: See Below
  • Weight: 0.33 grams (approximate) Ordering Information (Note 1) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMP4051LK3-13 P4051L 13 16 2,500 Note: 1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compoun ds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. Marking Information Top View Pin Out -Top View Equivalent Circuit GS D D D S G = Manufacturer’s Marking P4051L = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52) YYWW P4051L

Document Revision: 1 2 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMP4051LK3 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source voltage VDSS -40 V Gate-Source voltage VGS ±20 V Continuous Drain current VGS = 10V (Note 3) ID -10.5 A TA=70°C (Note 3) -8.40 (Note 2) -7.2 Pulsed Drain current VGS= 10V (Note 4) IDM -28.9 A Continuous Source current (Body diode) (Note 3) IS -10.1 A Pulsed Source current (Body diode) (Note 4) ISM -28.9 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Power dissipation Linear derating factor (Note 2) PD 4.18 33.4 W mW/°C (Note 3) 8.9 71.4 (Note 5) 2.14 17.1 Thermal Resistance, Junction to Ambient (Note 2) RθJA 29.9 °C/W (Note 3) 14.0 (Note 5) 58.4 Thermal Resistance, Junction to Lead (Note 6) RθJL 2.46 Operating and storage temperature range TJ, TSTG -55 to 150 °C Notes: 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note 2, except the device is measured at t ≤ 10 sec. 4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Thermal resistance from junction to solder-point (at the end of the drain lead).

Document Revision: 1 3 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMP4051LK3 Thermal Characteristics 100µ 1m 10m 100m 1 10 100 1k 0.1 1 10 10m 100m 100m 1 10 10m 100m Tamb=25°C 25mm x 25mm 1oz FR4 RDS(on) Limited 100µs 1ms 10ms 100ms DC Safe Operating Area -ID Drain Current (A) -VDS Drain-Source Voltage (V) 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 50mm x 50mm 2oz FR4 25mm x 25mm 1oz FR4 Derating Curve Temperature (°C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k Tamb=25°C 25mm x 25mm 1oz FR4 Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (°C/W)Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k 100 25mm x 25mm 1oz FR4 50mm x 50mm 2oz FR4 Safe Operating Area Single Pulse Tamb=25°C Pulse Power Dissipation Pulse Width (s) Max Power Dissipation (W) D=0.1 D=0.05 Single Pulse D=0.2 D=0.5 Tamb=25°C 50mm x 50mm 2oz FR4 Transient Thermal Impedance Pulse Width (s) Thermal Resistance (°C/W) Tamb=25°C 50mm x 50mm 2oz FR4 100µs 1ms 10ms 100ms 1sDC RDS(on) Limited -VDS Drain-Source Voltage (V) -ID Drain Current (A)

Document Revision: 1 4 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMP4051LK3 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -40 ⎯ ⎯ V ID = -250μA, VGS= 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -0.5 μA VDS= -40V, VGS= 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS= ±20V, VDS= 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) -1.0 ⎯ -3.0 V ID= -250μA, VDS= VGS Static Drain-Source On-Resistance (Note 7) RDS (ON) ⎯ ⎯ 0.051 Ω VGS= -10V, ID= -12A 0.085 VGS= -4.5V, ID= -8A Forward Transconductance (Notes 7 & 8) gfs ⎯ 16.6 ⎯ S VDS= -15V, ID= -12A Diode Forward Voltage (Note 7) VSD ⎯ -0.98 -1.2 V IS= -12A, VGS= 0V Reverse recovery time (Note 8) trr 138 ⎯ ns IS= -12A, di/dt= 100A/μs Reverse recovery charge (Note 8) Qrr ⎯ 841 ⎯ nC DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss ⎯ 674 ⎯ pF VDS= -20V, VGS= 0V f= 1MHz Output Capacitance Coss ⎯ 115 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 67.7 ⎯ pF Total Gate Charge Qg ⎯ 7.0 ⎯ nC VGS= -4.5V VDS= -20V ID= -12A Total Gate Charge Qg ⎯ 14 ⎯ nC VGS= -10V Gate-Source Charge Qgs ⎯ 2.2 ⎯ nC Gate-Drain Charge Qgd ⎯ 3.7 ⎯ nC Turn-On Delay Time (Note 9) tD(on) ⎯ 2.3 ⎯ ns VDD= -20V, VGS= -10V ID= -12A, RG ≅ 6.0Ω Turn-On Rise Time (Note 9) tr ⎯ 14.1 ⎯ ns Turn-Off Delay Time (Note 9) tD(off) ⎯ 25.1 ⎯ ns Turn-Off Fall Time (Note 9) tf ⎯ 14.3 ⎯ ns Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 8. For design aid only, not subject to production testing. 9. Switching characteristics are independent of operating junction temperatures.

Document Revision: 1 5 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMP4051LK3 Typical Characteristics 0.1 1 10 0.01 0.1 0.1 1 10 0.01 0.1 0.1 -50 0 50 100 150 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 0.01 0.1 1E-3 0.01 0.1 10V 3.5V -VGS 2.5V Output Characteristics T = 25°C -VGS -ID Drain Current (A) -VDS Drain-Source Voltage (V) 3.5V 10V 2.5V Output Characteristics T = 150°C -ID Drain Current (A) -VDS Drain-Source Voltage (V) Typical Transfer Characteristics -VDS = 10V T = 25°C T = 150°C -ID Drain Current (A) -VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS = -10V ID = -12A VGS(th) VGS = VDS ID = -250uA Normalised RDS(on) and VGS(th) Tj Junction Temperature (°C) 4.5V 10V 3.5V 2.5V On-Resistance v Drain Current T = 25°C-VGS RDS(on) Drain-Source On-Resistance (Ω) -ID Drain Current (A) T = 150°C T = 25°C Source-Drain Diode Forward Voltage -VSD Source-Drain Voltage (V) -ISD Reverse Drain Current (A)

Document Revision: 1 6 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMP4051LK3 Typical Characteristics - continued 0.1 1 10 200 400 600 800 1000 CRSS COSS CISS VGS = 0V f = 1MHz C Capacitance (pF) -VDS - Drain - Source Voltage (V) 02468 1 0 1 2 1 4 VDS = -20V ID = -12A Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) -VGS Gate-Source Voltage (V) Test Circuits Current regulator Charge Gate charge test circuit Switching time test circuit Basic gate charge waveform Switching time waveforms D.U.T 50k 0.2/H9262F 12V Same as D.U.T VGS VGS VDS VG QGS QGD QG VGS 90% 10% t(on) t(on) td(on) tr tr td(off) VDS VDD RD RG Pulse width /H11021 1/H9262S Duty factor 0.1% VDS ID IG

Document Revision: 1 7 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMP4051LK3 Package Outline Dimensions DIM Inches Millimeters DIM Inches Millimeters Min Max Min Max Min Max Min Max E 0.250 0.265 6.35 6.73 θ° 0° 15° 0° 15°

Document Revision: 1 8 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMP4051LK3 Suggested Pad Layout 5.8 0.228 1.6 0.063 6.2 0.244 3.0 0.118 6.17 0.243 2.58 0.101 mm inches IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Inco rporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability what soever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes In corporated products for any unintended or unauthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representatives harmless agains t all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or system s are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when prop erly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com