DMP4047SSDQ

Document overview

  • Manufacturer or author: Diodes Incorporated
  • PDF pages: 7

Technical content

Features

 100% Unclamped Inductive Switching (UIS) Test in Production  Low on-resistance  Fast switching speed  Totally Lead-Free & Fully RoHS compliant (Note 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DIODES™ DMP4047SSDQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Mechanical Data  Package: SO-8  Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram  Terminals: Finish – Tin Finish annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208  Weight: 0.074 grams (Approximate) Ordering Information (Note 4) Part Number Package Packing Quantity Carrier DMP4047SSDQ-13 SO-8 2,500 Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Top View Top View Pin-Out Equivalent Circuit SO-8 D1S1 D S G D S G

Document Number DS42782 Rev. 1 - 2 2 of 7 www.diodes.com January 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DMP4047SSDQ Marking Information Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = -10V Steady State TA = +25°C TA = +70°C ID -5.1 -4.1 A t < 10s TA = +25°C TA = +70°C ID -6.5 -5.2 A Continuous Drain Current (Note 6) VGS = -4.5V Steady State TA = +25°C TA = +70°C ID -4.6 -3.7 A t < 10s TA = +25°C TA = +70°C ID -5.9 -4.7 A Maximum Body Diode Continuous Current IS -6.5 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM -26 A Avalanche Current (Note 7) L = 0.1mH IAS -18 A Avalanche Energy (Note 7) L = 0.1mH EAS 16.2 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = +25°C PD 1.3 W TA = +70°C 0.8 Thermal Resistance, Junction to Ambient (Note 5) Steady state RθJA 98 °C/W t < 10s 59 Total Power Dissipation (Note 6) TA = +25°C PD 1.8 W TA = +70°C 1.1 Thermal Resistance, Junction to Ambient (Note 6) Steady state RθJA 71 °C/W t < 10s 43 Thermal Resistance, Junction to Case (Note 6) RθJC 11.8 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. = Manufacturer’s Marking P4047SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 23 = 2023) WW = Week (01 - 53) P4047SD YY WW

Document Number DS42782 Rev. 1 - 2 3 of 7 www.diodes.com January 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DMP4047SSDQ Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -40   V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS   -1 µA VDS = -40V, VGS = 0V Gate-Source Leakage IGSS   ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) -1.0  -3.0 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON)  33 45 mΩ VGS = -10V, ID = -4.4A 40 55 VGS = -4.5V, ID = -3.7A Diode Forward Voltage VSD  -0.75 -1.2 V VGS = 0V, IS = -3.9A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss  1154  pF VDS = -20V, VGS = 0V, f = 1.0MHz Output Capacitance Coss  84  pF Reverse Transfer Capacitance Crss  66  pF Gate Resistance RG  12.6  Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg  10.6  nC VDS = -20V, ID = -4.9A Total Gate Charge (VGS = -10V) Qg  21.5  nC Gate-Source Charge Qgs  2.2  nC Gate-Drain Charge Qgd  3.3  nC Turn-On Delay Time tD(on)  8.7  ns VDS = -20V, ID = -3.9A VGS = 4.5V, RG = 1Ω Turn-On Rise Time tr  19.6  ns Turn-Off Delay Time tD(off)  34.9  ns Turn-Off Fall Time tf  25.5  ns Body Diode Reverse Recovery Time trr  9.61  ns IF = -3.9A, di/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr  3.3  nC Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing.

Document Number DS42782 Rev. 1 - 2 6 of 7 www.diodes.com January 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DMP4047SSDQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 SO-8 Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e -- -- 1.27 h - -- 0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50 b e E A 9° (All sides) 4°±3° c Q h 45° R 0.1 D L Seating Plane Gauge Plane C X Y

Document Number DS42782 Rev. 1 - 2 7 of 7 www.diodes.com January 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DMP4047SSDQ IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICUL AR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engin eering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality con trol techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associ ated with their applications. 3. Diodes assumes no liability for any application -related information, support, assistance or feedback that may be provided by Diodes from time to time. 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DIODES is a trademark of Diodes Incorporated in the United States and other countries. All other trademarks are the property of their respective owners. © 2023 Diodes Incorporated. All Rights Reserved. www.diodes.com