DMP4026SFGQ
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 7
Technical content
Document number: DS44883 Rev. 2 - 2 1 of 7 www.diodes.com April 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DMP4026SFGQ 40V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS RDS(ON) Max ID Max TC = +25° C -40V 25mΩ @ VGS = -10V -28A 45mΩ @ VGS = -4.5V -21A Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC -Q101, supported by a PPAP and is ideal for use in: Motor controls Backlighting DC-DC converters Printer equipment Features and Benefits Low RDS(ON) – Minimizes Conduction Losses Fast Switching Speed – Minimizes Switching Losses 100% Unclamped Inductive Switch (UIS) Test in Production Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMP4026SFGQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Mechanical Data Package: PowerDI®3333-8 Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Below Terminals: Finish - Matte Tin Annealed over Copper Lead Frame. Solderable per MIL-STD-202, Method 208 Weight: 0.0172 grams (Approximate) Ordering Information (Note 4) Part Number Package Packing Qty. Carrier DMP4026SFGQ-7 PowerDI3333-8 2,000 Reel DMP4026SFGQ-13 PowerDI3333-8 3,000 Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2022 2023 2024 2025 2026 2027 2028 2029 2030 2031 2032 2033 Code 2 3 4 5 6 7 8 9 0 1 2 3 Week 1-26 27-52 53 Code A-Z a-z z Internal Code Sun Mon Tue Wed Thu Fri Sat Code T U V W X Y Z P46 Top View PowerDI3333-8 Device Symbol Bottom View P46 = Product Type Marking Code YWX = Date Code Marking Y = Year (ex: 3 = 2023) W = Week (ex: a = Week 27; z Represents Week 52 and 53) X = Internal Code (ex: U = Monday)
Document number: DS44883 Rev. 2 - 2 2 of 7 www.diodes.com April 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DMP4026SFGQ Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS 20 Continuous Drain Current (Note 6), VGS = -10V TC = +25°C ID -28 A TC = +70° C -22 Maximum Continuous Body Diode Forward Current (Note 6) IS -28 Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) IDM -113 Pulsed Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%) ISM -113 Avalanche Current, L = 0.3mH IAS -20 A Avalanche Energy, L = 0.3mH EAS 65 mJ Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25°C PD 2.6 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 48 ° C/W Total Power Dissipation (Note 6) TC = +25°C PD 33 W Thermal Resistance, Junction to Case (Note 6) Steady State RθJC 3.8 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -40 V ID = -250µ A, VGS = 0V Zero Gate Voltage Drain Current IDSS -1.0 µA VDS = -40V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) -0.8 -1.8 V ID = -250μA, VDS = VGS Static Drain-Source On-Resistance RDS(ON) 15 25 mΩ VGS = -10V, ID = -3A 18 45 VGS = -4.5V, ID = -3A Diode Forward Voltage VSD -0.7 -1.0 V IS = -1A, VGS = 0V DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss 2275 pF VDS = -20V, VGS = 0V f = 1MHz Output Capacitance Coss 215 Reverse Transfer Capacitance Crss 197 Gate Resistance Rg 2.3 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -10V) Qg 48 nC VDS = -20V, ID = -3A Total Gate Charge (VGS = -4.5V) Qg 25 Gate-Source Charge Qgs 4 Gate-Drain Charge Qgd 8 Turn-On Delay Time tD(ON) 4.5 ns VDD = -20V, VGS = -10V ID = -3A, RG = 6Ω Turn-On Rise Time tR 5.6 Turn-Off Delay Time tD(OFF) 75 Turn-Off Fall Time tF 26 Body Diode Reverse Recovery Time tRR 18.5 ns IS = -3A, di/dt = 100A/μs Body Diode Reverse Recovery Charge QRR 9.5 nC IS = -3A, di/dt = 100A/µs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.
© 2023 Copyright Diodes Incorporated. All Rights Reserved. Figure 13. Transient Thermal Resistance
Document number: DS44883 Rev. 2 - 2 6 of 7 www.diodes.com April 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DMP4026SFGQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 PowerDI3333-8 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.20 D 3.25 3.35 3.30 D2 2.22 2.32 2.27 E 3.25 3.35 3.30 E2 1.56 1.66 1.61 E3 0.79 0.89 0.84 e 0.65 L 0.35 0.45 0.40 L1 0.39 z 0.515 aaa 0.25 bbb 0.10 ccc 0.10 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 Y4 0.540 8x- L1( 3x) b2( 4x) z( 4x) D E e b( 8x) A A3 Pin #1 ID ccc C 0.08 C Seating Plane AB C bbb C A B L( 4x) aaa A 2x- aaa B 2x- X Y C
Document number: DS44883 Rev. 2 - 2 7 of 7 www.diodes.com April 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DMP4026SFGQ IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICUL AR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as sa fety and functional- safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality con trol techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. 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Diodes’ products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 6. Diodes’ products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sa le is prohibited under any applicable laws and regulations. Should customers or users use Diodes’ products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any da mages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and age nts harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may c ontain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this docum ent is error-free and Diodes is under no obligation to update or otherwise correct this information. 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