DMP4015SK3Q
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 7
Technical content
Document number: DS36665 Rev. 8 - 2 1 of 7 www.diodes.com February 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. DMP4015SK3Q P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) Max ID TC = +25°C -40V 11mΩ @ VGS = -10V -35A 15mΩ @ VGS = -4.5V -30A Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC -Q101, supported by a PPAP, and is ideal for use in:
- DC-DC converters
- Power-management functions
- Backlighting Features and Benefits
- 100% Unclamped Inductive Switch (UIS) Test in Production
- Low On-Resistance
- Fast Switching Speed
- Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- The DMP4015SK3Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Mechanical Data
- Package: TO252
- Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections: See Diagram
- Terminals: Finish — Matte Tin Finish Annealed over Copper Lead- Frame. Solderable per MIL-STD-202, Method 208
- Weight: 0.33 grams (Approximate) Ordering Information (Note 4) Orderable Part Number Package Packing Qty. Carrier DMP4015SK3Q-13 TO252 (DPAK) 2500 Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl ) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Equivalent Circuit Top View Pin-Out Top View TO252 (DPAK) Green YYWW P4015S = Manufacturer’s Marking P4015S = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 26 = 2026) WW = Week (01 to 53)
Document number: DS36665 Rev. 8 - 2 2 of 7 www.diodes.com February 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. DMP4015SK3Q Maximum Ratings (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current (Note 5) VGS = -10V Steady State TC = +25° C TC = +70° C ID -35 -27 A Continuous Drain Current (Note 5) VGS = -10V Steady State TA = +25° C TA = +70° C ID -14 -11 A t < 10s TA = +25° C TA = +70° C ID -22 -18 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM -100 A Maximum Body Diode Forward Current (Note 5) IS -5.5 A Avalanche Current, L = 1mH IAS -22 A Avalanche Energy, L = 1mH EAS 242 mJ Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25° C PD 3.5 W TA = +70°C 2.2 Thermal Resistance, Junction to Ambient (Note 5) Steady State RJA 36 ° C/W t < 10s 15 Thermal Resistance, Junction to Case (Note 5) Steady State RJC 4.5 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@ TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS -40 — — V VGS = 0, ID = -250μA Zero Gate Voltage Drain Current IDSS — — -1 µA VDS = -40V, VGS = 0 Gate-Source Leakage IGSS — — 100 nA VGS = 25V, VDS = 0 ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(TH) -1.5 -2 -2.5 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) — 7 11 mΩ VGS = -10V, ID = -9.8A Forward Transfer Admittance |Yfs| — 26 — S VDS = -20V, ID = -9.8A Diode Forward Voltage VSD — -0.7 -1 V VGS = 0, IS = -1A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss — 4,234 — pF VDS = -20V, VGS = 0 f = 1MHz Output Capacitance Coss — 1,036 — Reverse Transfer Capacitance Crss — 526 — Gate Resistance Rg — 7.77 — Ω VDS = 0, VGS = 0, f = 1MHz Total Gate Charge Qg — 47.5 — nC VDS = -20V, VGS = -5V ID = -9.8A Gate-Source Charge Qgs — 14.2 — Gate-Drain Charge Qgd — 13.5 — Turn-On Delay Time tD(ON) — 13.2 — ns VGS = -10V, VDD = -20V, RG = 6Ω, ID = -1A Turn-On Rise Time tR — 10 — Turn-Off Delay Time tD(OFF) — 302.7 — Turn-Off Fall Time tF — 137.9 — Notes: 5. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing.
Document number: DS36665 Rev. 8 - 2 3 of 7 www.diodes.com February 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. DMP4015SK3Q -V , DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics DS -I , DRAIN CURRENT (A)D 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.5 1 1.5 2 -V = 10VGS -V = 4.5VGS -V = 4.0VGS -V = 3.5VGS -V = 3.0VGS -I , DRAIN CURRENT (A)D -V , GATE-SOURCE VOLTAGE (V)GS Fig. 2 Typical Transfer Characteristics -I , DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage D R ,DRAIN-SOURCE ON-RESISTANCE( )DS(ON) 0.005 0.01 0.015 0.02 0 5 10 15 20 25 30 -I , DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature D R , DRAIN-SOURCE ON-RESISTANCE( )DS(ON) 0.005 0.01 0.015 0.02 0 5 10 15 20 25 30 -V = 4.5VGS T = -55 CA T = 25 CA T = 85 CA T = 125 CA T = 150 CA -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J Fig. 5 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE (Normalized) DS(ON) 0.6 0.8 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J Fig. 6 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) -V = 10V -I = 10A GS D -V = 4.5V -I = 5.0A GS D 0.004 0.008 0.012 0.016 0.020
Document number: DS36665 Rev. 8 - 2 4 of 7 www.diodes.com February 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. DMP4015SK3Q -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE ( 癈 ) Fig. 7 Gate Threshold Variation vs. Ambient Temperature A -V , GATE THRESHOLD VOLTAGE (V)GS(TH) 0.4 0.8 1.2 1.6 2.4 -I , SOURCE CURRENT (A)S -V , SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current SD 100 1000 10000 0 5 10 15 20 25 30 C , JUNCTION CAPACITANCE (pF)T V , DRAIN-SOURCE VOLTAGE (V)DS Fig. 9 Typical Junction Capacitance Ciss Coss Crss f=1MHz -V , DRAIN-SOURCE VOLTAGE(V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage DS -I , LEAKAGE CURRENT (nA)DSS 0.1 100 1000 10000 0 5 10 15 20 25 30 T =150 癈A T =125 癈A T =85 癈A T =25 癈A Q , TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics g V , GATE-SOURCE VOLTAGE (V)GS 0 20 40 60 80 100 120 100 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 12 Single Pulse Maximum Power Dissipation P , PEAK TRANSIENT POWER (W)(pk) Single Pulse R = 72 癈 /WJA R (t) = r(t) * R = P * R JA JA J A JAT - T TA = 25oC TA = 85oC TA = 125oC TA = 150oC (oC) 72oC/W
Document number: DS36665 Rev. 8 - 2 5 of 7 www.diodes.com February 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. DMP4015SK3Q INDUCTOR (mH) Fig. 13 Single-Pulse Avalanche Tested I, AVALANCHE CURRENT (A) AS 100 200 300 400 500 600 E , AVALANCHE ENERGY (mJ)AS EAS IAS Starting Temperature (T ) = 25 癈J 0.1 1 10 100 -V , DRAIN-SOURCE VOLTAGE (V) Fig. 14 SOA, Safe Operation Area DS 0.01 0.1 100-I , DRAIN CURRENT (A)D R Limited DS(on) T = 150 癈 T = 25 癈 J(max) A V = -10V Single Pulse GS DUT on 1 * MRP Board DC P = 10sW P = 1sW P = 100msW P = 10msW P = 1msW P = 100 祍W P = 10 sW µ 0.001 0.01 0.1 1 10 100 1,000 10,000 t1, PULSE DURATION TIMES (sec) Fig. 15 Transient Thermal Resistance 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE R (t) = r(t) * R R = 72 癈 /W Duty Cycle, D = t1/ t2 JA JA JA D = 0.9 D = 0.7 D = 0.5 D = 0.3 D = 0.1 D = 0.50 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse TJ = 25oC 150oC 25oC PW = 100μs t1, PULSE DURATION TIME (sec)
Document number: DS36665 Rev. 8 - 2 6 of 7 www.diodes.com February 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. DMP4015SK3Q Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.50 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 -- -- e 2.286 BSC E 6.45 6.70 6.58 E1 4.32 -- -- H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) Dimensions Value (in mm) C 4.572 X 1.060 X1 5.632 Y 2.600 Y1 5.700 Y2 10.700 E D b2( 2x) b( 3x) e c A 7° ±1° H Seating Plane Gauge Plane a 0.508 L 2.74REF X Y C
Document number: DS36665 Rev. 8 - 2 7 of 7 www.diodes.com February 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. DMP4015SK3Q IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICU LAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which inco rporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional - safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality co ntrol techniques , redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. 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