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Document number: DS35480 Rev. 6 - 2 1 of 7 www.diodes.com February 2013 © Diodes Incorporated DMP4015SK3 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) max ID TC = +25°C -40V 11m @ VGS = -10V -35A 15m @ VGS = -4.5V -30A
Description
This new generation MOSFET has been designed to minimize the on- state resistance (R DS(ON)) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications.
Applications
DC-DC Converters Power management functions Backlighting Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production Low on-resistance Fast switching speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: TO252 (DPAK) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (approximate) Ordering Information (Note 4) Part Number Compliance Case Packaging DMP4015SK3-13 Standard TO252 2,500/Tape & Reel DMP4015SK3Q-13 Automotive TO252 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoH S 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more in formation about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html Marking Information YYWW P4015S Logo Part no. . Year: “11” = 2011 Xth week: 01 ~ 53 Equivalent Circuit G S D D Top View Pin-Out Top View TO252 Green
Document number: DS35480 Rev. 6 - 2 2 of 7 www.diodes.com February 2013 © Diodes Incorporated DMP4015SK3 Maximum Ratings (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current (Note 5) VGS = -10V Steady State TC = +25°C TC = +70°C ID -35 -27 A Continuous Drain Current (Note 5) VGS = -10V Steady State TA = +25°C TA = +70°C ID -14 -11 A t<10s TA = +25°C TA = +70°C ID -22 -18 A Pulsed Drain Current (10s pulse, duty cycle = 1%) IDM -100 A Maximum Body Diode Forward Current (Note 5) IS -5.5 A Avalanche Current (Note 6) IAS -57 A Avalanche Energy (Note 6) EAS 162 mJ Thermal Characteristics (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = +25°C PD 3.5 W TA = +70°C 2.2 Thermal Resistance, Junction to Ambient (Note 5) Steady state RθJA 36 °C/W t<10s 15 Thermal Resistance, Junction to Case (Note 5) Steady state RθJC 4.5 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -40 V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS -1 µ A VDS = -40V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 25V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) -1.5 -2.0 -2.5 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS(ON) 7 11 m VGS = -10V, ID = -9.8A Forward Transfer Admittance |Yfs| 26 S VDS = -20V, ID = -9.8A Diode Forward Voltage VSD -0.7 -1.0 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss 4234 pF VDS = -20V, VGS = 0V f = 1.0MHz Output Capacitance Coss 1036 Reverse Transfer Capacitance Crss 526 Gate Resistance RG 7.77 VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge Qg 47.5 nC VDS = -20V, VGS = -5V ID = -9.8A Gate-Source Charge Qgs 14.2 Gate-Drain Charge Qgd 13.5 Turn-On Delay Time tD(on) 13.2 ns VGS = -10V, VDD = -20V, RG = 6, ID = -1A Turn-On Rise Time tr 10.0 Turn-Off Delay Time tD(off) 302.7 Turn-Off Fall Time tf 137.9 Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. UIS in production with L = 0.1mH, TJ = +25°C. 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing.
Document number: DS35480 Rev. 6 - 2 3 of 7 www.diodes.com February 2013 © Diodes Incorporated DMP4015SK3 -V , DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics DS -I , D RAIN CURRENT (A)D 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.5 1 1.5 2 -V = 10VGS -V = 4.5VGS -V = 4.0VGS -V = 3.5VGS -V = 3.0VGS -I , DRAIN CURRENT (A)D -V , GATE-SOURCE VOLTAGE (V)GS Fig. 2 Typical Transfer Characteristics -I , DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage D R ,DRAIN-SOURCE ON-RESISTANCE( )DS(ON) 0.005 0.01 0.015 0.02 0 5 10 15 20 25 30 -I , DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and T emperature D R , DRAIN-SOURCE ON-RESISTANCE( )DS(ON) 0.005 0.01 0.015 0.02 0 5 10 15 20 25 30 -V = 4.5VGS T = - 5 5 CA T = 2 5 CA T = 8 5 CA T = 1 2 5 CA T = 1 5 0 CA -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J Fig. 5 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE (Normalized) DS(ON) 0.6 0.8 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J Fig. 6 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) -V = 10V -I = 10A GS D -V = 4.5V -I = 5.0A GS D 0.004 0.008 0.012 0.016 0.020
Document number: DS35480 Rev. 6 - 2 4 of 7 www.diodes.com February 2013 © Diodes Incorporated DMP4015SK3 -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature A -V , GATE THRESHOLD VOLTAGE (V)GS(TH) 0.4 0.8 1.2 1.6 2.4 -I , SOURCE CURRENT (A)S -V , SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current SD V , DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance DS C , JUNCTION CAPACITANCE (pF)T CISS COSS CRSS 100 1000 0 5 10 15 20 25 30 f = 1MHz -V , DRAIN-SOURCE VOLTAGE(V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage DS -I , LEAKA GE CURRENT (nA)DSS 0.1 100 1000 10000 051 0 1 5 2 0 2 5 3 0 T =150°CA T =125°CA T =85°CA T =25°CA Q , TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics g V , GATE-SOURCE VOLTAGE (V)GS 02 0 4 0 6 0 8 0 1 0 0 1 2 0 100 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 12 Single Pulse Maximum Power Dissipation P , PEAK TRANSIENT POWER (W)(pk) Single Pulse R = 7 2 ° C / WJA R (t) = r(t) * R = P * R JA JA JA J AT - T
Document number: DS35480 Rev. 6 - 2 5 of 7 www.diodes.com February 2013 © Diodes Incorporated DMP4015SK3 INDUCTOR (mH) Fig. 13 Single-Pulse Avalanche Tested I, A V A L A NCHE CURRENT (A) AS 100 200 300 400 500 600 E , AVALAN CHE ENERGY (mJ)AS EAS IAS Starting Temperature (T ) = 25°CJ 0.1 1 10 100 -V , DRAIN-SOURCE VOLTAGE (V) Fig. 14 SOA, Safe Operation Area DS 0.01 0.1 100-I , D RAIN CURRENT (A)D R Limited DS(on) T = 150°C T = 2 5 ° C J(max) A V = -10V Single Pulse GS DUT on 1 * MRP Board DC P = 10sW P = 1 sW P = 100msW P = 10msW P = 1 m sW P = 100µsW P = 1 0 sW µ 0.001 0.01 0.1 1 10 100 1,000 10,000 t1, PULSE DURATION TIMES (sec) Fig. 15 Transient Thermal Resistance 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE R (t) = r(t) * R R = 7 2 ° C / W Duty Cycle, D = t1/ t2 JA JA JA D = 0.9 D = 0.7 D = 0.5 D = 0.3 D = 0.1 D = 0.50 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse
Document number: DS35480 Rev. 6 - 2 6 of 7 www.diodes.com February 2013 © Diodes Incorporated DMP4015SK3 Package Outline Dimensions Suggested Pad Layout TO252 Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° All Dimensions in mm Dimensions Value (in mm) Z 11.6 X1 1.5 X2 7.0 Y1 2.5 Y2 7.0 C 6.9 E1 2.3 E 2X b2 D A e L 3X b a H A2 E1 C Z
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