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Document number: DS38779 Rev. 2 - 2 1 of 7 www.diodes.com March 2018 © Diodes Incorporated DMP4013LFGQ ADVANCE INFORMATION 40V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS RDS(ON) Max ID Max TA = +25°C -40V 13mΩ @ VGS = -10V -10.3A 18mΩ @ VGS = -4.5V -8.8A Description and Applications This MOSFET is designed to meet the st ringent requirements of Automotive applications. It is qualified to AEC -Q101, supported by a PPAP and is ideal for use in: Reverse Polarity Protection Power Management Functions DC-DC Converters Features and Benefits Low RDS(ON) – Ensures On-State Losses are Minimized Small Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies 33% of the Board Area Occupied by SO-8, Enabling Smaller End Product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Case: PowerDI®3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) Ordering Information (Note 5) Part Number Case Packaging DMP4013LFGQ-7 PowerDI3333-8 2,000/Tape & Reel DMP4013LFGQ-13 PowerDI3333-8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See http://www.diodes.com/quality/lead_free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Top View Bottom View PowerDI3333-8 P13= Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 18 = 2018) WW = Week Code (01 to 53) S S S G D D D D Pin 1 Equivalent Circuit P13 YYWW D S G PowerDI3333-8 PowerDI is a registered trademark of Diodes Incorporated.
Document number: DS38779 Rev. 2 - 2 2 of 7 www.diodes.com March 2018 © Diodes Incorporated DMP4013LFGQ ADVANCE INFORMATION Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 7) VGS = -10V Steady State TA = +25° C TA = +70° C ID -10.3 -8.3 A t<10s TA = +25° C TA = +70° C ID -13.7 -11 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM -80 A Maximum Continuous Body Diode Forward Current (Note 7) IS -2.6 A Avalanche Current, L = 0.1mH IAS -34 A Avalanche Energy, L = 0.1mH EAS 58 mJ Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 6) PD 1 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 123 ° C/W t<10s 69 Total Power Dissipation (Note 7) PD 2.1 W Thermal Resistance, Junction to Ambient (Note 7) Steady State RθJA 60 ° C/W t<10s 34 Thermal Resistance, Junction to Case (Note 7) RθJC 3.3 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -40 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = +25° C IDSS — — -1 µA VDS = -40V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) -1 — -3 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) — 9.4 13 mΩ VGS = -10V, ID = -10A Diode Forward Voltage VSD — -0.7 -1.2 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 3,426 — pF VDS = -20V, VGS = 0V, f = 1MHz Output Capacitance Coss — 283 — pF Reverse Transfer Capacitance Crss — 235 — pF Gate Resistance Rg — 4.7 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg — 32.5 — nC VDS = -20V, ID = -10A Total Gate Charge (VGS = -10V) Qg — 68.6 — nC Gate-Source Charge Qgs — 8.2 — nC Gate-Drain Charge Qgd — 9.9 — nC Turn-On Delay Time tD(ON) — 5.3 — ns VDD = -20V, VGEN = -10V, RG = 3Ω, ID = -10A Turn-On Rise Time tR — 20 — ns Turn-Off Delay Time tD(OFF) — 126 — ns Turn-Off Fall Time tF — 83 — ns Body Diode Reverse Recovery Time tRR — 19.5 — ns IF = -10A, di/dt = 100A/μs Body Diode Reverse Recovery Charge QRR — 9.8 — nC Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing.
Document number: DS38779 Rev. 2 - 2 5 of 7 www.diodes.com March 2018 © Diodes Incorporated DMP4013LFGQ ADVANCE INFORMATION t1, PULSE DURATION TIMES (sec) Figure 13 Transient Thermal Resistance r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 Single Pulse R (t) = r(t) * R R = 119 癈/W Duty Cycle, D = t1/ t2 JA JA JA 0.001 0.01 0.1 1E-04 0.001 0.01 0.1 1 10 100 1000 D = 0.9 119°C/W
Document number: DS38779 Rev. 2 - 2 6 of 7 www.diodes.com March 2018 © Diodes Incorporated DMP4013LFGQ ADVANCE INFORMATION Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 PowerDI3333-8 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.15 0.25 0.20 D 3.25 3.35 3.30 D2 2.22 2.32 2.27 E 3 25 3.35 3.30 E2 1.56 1.66 1.61 E3 0.79 0.89 0.84 E4 1.60 1.70 1.65 e 0.65 L 0.35 0.45 0.40 L1 0.39 z 0.515 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 X Y C Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 Y4 0.540 D E e b A Pin #1 ID Seating Plane L(4x) L1(3x) b2(4x) z(4x)
Document number: DS38779 Rev. 2 - 2 7 of 7 www.diodes.com March 2018 © Diodes Incorporated DMP4013LFGQ ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the rig ht to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability a rising out of the application or use of this doc ument or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applic ations shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representat ives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by o ne or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated in to multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Di odes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2018, Diodes Incorporated www.diodes.com