DMP2004TK_09 DIODES | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Lead Free By Design/RoHS Compliant (Note 2)
  • ESD Protected Gate
  • "Green" Device (Note 4)
  • Qualified to AEC-Q101 standards for High Reliability Mechanical Data
  • Case: SOT-523
  • Case Material: Molded Plasti c, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020D
  • Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208
  • Terminal Connections: See Diagram
  • Marking Information: See Page 3
  • Ordering Information: See Page 3
  • Weight: 0.002 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Drain Current (Note 1) Steady State TA = 25°C TA = 85°C ID -430 -310 mA Pulsed Drain Current (Note 3) IDM -750 mA Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation (Note 1) PD 150 mW Thermal Resistance, Junction to Ambient RθJA 833 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS -20 ⎯ ⎯ V VGS = 0V, ID = -250mA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1.0 μA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±1.0 μA VGS = ±4.5V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) -0.5 ⎯ -1.0 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) ⎯ 0.7 1.1 1.7 1.1 1.6 2.4 Ω V GS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA Forward Transfer Admittance |Yfs| 200 ⎯ ⎯ ms VDS =10V, ID = 0.2A Diode Forward Voltage (Note 5) VSD ⎯ ⎯ -1.4 V V GS = 0V, IS = -115mA DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ ⎯ 175 pF VDS = -16V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ ⎯ 30 pF Reverse Transfer Capacitance Crss ⎯ ⎯ 20 pF Notes: 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Pulse width ≤10μS, Duty Cycle ≤1% 5. Short duration pulse test used to minimize self-heating effect. SOT-523 TOP VIEW Equivalent Circuit TOP VIEW Source Gate Protection Diode Gate Drain G S D ESD PROTECTED

Document number: DS30932 Rev. 4 - 2 2 of 4 www.diodes.com March 2009 © Diodes Incorporated DMP2004TK -V , DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DS -I , D RAIN CURRENT (A)D -V , GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics GS -I , D RAIN CURRENT (A)D T , AMBIENT TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Ambient Temperature A -V , GATE THRESHOLD VOLTAGE (V)GS(th) -I , DRAIN-SOURCE CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current D -I , DRAIN-SOURCE CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current D -I , DRAIN-SOURCE CURRENT (A) Fig. 6 Static Drain-Source On-Resistance vs. Drain-Source Current D

Document number: DS30932 Rev. 4 - 2 3 of 4 www.diodes.com March 2009 © Diodes Incorporated DMP2004TK T , AMBIENT TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature A -V , SOURCE-DRAIN VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage DS -I , DRAIN CURRENT (A) Fig. 9 Forward Transfer Admittance vs. Drain Current D -V , DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Capacitance DS 120 150 Ordering Information (Note 6) Part Number Case Packaging DMP2004TK-7 SOT-523 3000/Tape & Reel Marking Information Date Code Key Year 2006 2007 2008 2009 2010 2011 2012 Code T U V W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D PAB = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) PAB YM

Document number: DS30932 Rev. 4 - 2 4 of 4 www.diodes.com March 2009 © Diodes Incorporated DMP2004TK Package Outline Dimensions Suggested Pad Layout IMPORTANT NOTICE Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. Diodes Incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. SOT-523 Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D ⎯ ⎯ 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 α 0° 8° ⎯ All Dimensions in mm Dimensions Value (in mm) Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7 X E Y CZ A M J LD B C H K G N