DMP1100UCB4
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 8
Technical content
Document number: DS38339 Rev. 3 - 2 1 of 8 www.diodes.com August 2016 © Diodes Incorporated DMP1100UCB4 NEW PRODUCT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ @VGS = -4.5V, TA = +25°C) BVDSS RDS(ON) Qg Qgd ID -12V 65mΩ 9nC 2.4nC -3.2A Description and Applications This new generation MOSFET is designed to minimize the on- state resis tance (R DS(ON)) and yet maintain superior switching performance, making it ideal for high -efficiency power management applications. It is a high-performance MOSFET in ultra-small 0.8mm x 0.8mm package. Portable Applications Load Switch Power Management Functions Features and Benefits Built-in G-S Protection Diode against ESD 2kV HBM Ultra Small 0.8mm x 0.8mm Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: X2-WLB0808-4 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram UBM Opening: 203µm Ordering Information (Note 4) Part Number Case Packaging DMP1100UCB4-7 X2-WLB0808-4 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant . 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information Date Code Key Year 2016 2017 2018 2019 2020 2021 2022 Code D E F G H I J Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Top View ESD PROTECTED 9W = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: D = 2016) M or M = Month (ex: 9 = September)
Document number: DS38339 Rev. 3 - 2 2 of 8 www.diodes.com August 2016 © Diodes Incorporated DMP1100UCB4 NEW PRODUCT Maximum Ratings Characteristic Symbol Value Unit Drain-Source Voltage VDSS -12 V Gate-Source Voltage VGSS 8 V Continuous Source Current @ VGS = -4.5V (Note 5) TA = +25°C TA = +70°C ID -2.5 -2.0 A Continuous Source Current @ VGS = -4.5V (Note 6) TA = +25°C TA = +70°C ID -3.2 -2.6 A Pulsed Drain Current (Pulse Duration 10μs, Duty Cycle ≤1%) IDM -13 A Continuous Source-Drain Diode Current IS -1.2 A Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 0.67 W Thermal Resistance, Junction to Ambient (Note 5) RJA 187 °C/W Total Power Dissipation (Note 6) PD 1.1 W Thermal Resistance, Junction to Ambient (Note 6) RJA 117 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -12 - - V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS - - 1 µA VDS = -12V, VGS = 0V Gate-Body Leakage IGSS - - 10 µA VGS = 8V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) -0.35 -0.55 -0.8 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) - 115 135 150 150 170 300 400 mΩ VGS = -4.5V, ID = -3A VGS = -2.5V, ID = -2A VGS = -1.8V, ID = -1A VGS = -1.5V, ID = -1A VGS = -1.4V, ID = -1A VGS = -1.3V, ID = -1A Forward Transfer Admittance |Yfs| - 6.5 - S VDS = -4V, IS = -1.5A Body Diode Forward Voltage VSD - -0.7 - V VGS = 0V, IS = -1.5A, DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss - 680 820 pF VDS = -6V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 220 290 pF Reverse Transfer Capacitance Crss - 205 280 pF Gate Resistance Rg - 11.2 17 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg - 9.0 14 nC VGS = -4.5V, VDS = -6V, ID = -2A Gate-Source Charge Qgs - 1.0 - nC Gate-Drain Charge Qgd - 2.6 - nC Turn-On Delay Time tD(ON) - 4.4 9 ns VDD = -4V, ID = -2A VGEN = -4.5V, Rg = 1Ω, RL = 3Ω Turn-On Rise Time tR - 10.1 - ns Turn-Off Delay Time tD(OFF) - 22 33 ns Turn-Off Fall Time tF - 20 - ns Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect.
Document number: DS38339 Rev. 3 - 2 3 of 8 www.diodes.com August 2016 © Diodes Incorporated DMP1100UCB4 NEW PRODUCT Electrical Characteristics (@TA = 0°C.) Characteristic Symbol Min Typ Max Unit Test Condition ON CHARACTERISTICS (Note 7,Note 8) Static Drain-Source On-Resistance RDS(ON) - 112 130 150 150 170 300 400 mΩ VGS = -4.5V, ID = -3A VGS = -2.5V, ID = -2A VGS = -1.8V, ID = -1A VGS = -1.5V, ID = -1A VGS = -1.4V, ID = -1A VGS = -1.3V, ID = -1A Electrical Characteristics (@TA = + 65°C.) Characteristic Symbol Min Typ Max Unit Test Condition ON CHARACTERISTICS (Note 7,Note 8) Static Drain-Source On-Resistance RDS(ON) - 107 127 141 163 118 185 195 300 400 mΩ VGS = -4.5V, ID = -3A VGS = -2.5V, ID = -2A VGS = -1.8V, ID = -1A VGS = -1.5V, ID = -1A VGS = -1.4V, ID = -1A VGS = -1.3V, ID = -1A Note: 8. Guaranteed by design. Not subject to production testing.
Figure 13. Transient Thermal Resistance
Document number: DS38339 Rev. 3 - 2 7 of 8 www.diodes.com August 2016 © Diodes Incorporated DMP1100UCB4 NEW PRODUCT Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. X2-WLB0808-4 X2-WLB0808-4 Dim Min Max Typ A -- 0.400 0.375 A2 -- -- 0.180 b 0.1971 0.2409 0.219 D 0.790 0.820 0.816 E 0.790 0.820 0.816 e -- -- 0.400 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X2-WLB0808-4 Dimensions Value (in mm) C 0.400 D 0.219 D E A2 A Seating Plane e e Ø b (4x) Pin1 C C Ø D (4x)
Document number: DS38339 Rev. 3 - 2 8 of 8 www.diodes.com August 2016 © Diodes Incorporated DMP1100UCB4 NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PART ICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications sha ll assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees a rising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Prod uct names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properl y used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorpora ted and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com