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Document Number DS37841 Rev. 3 - 2 1 of 7 www.diodes.com November 2015 © Diodes Incorporated DMP10H400SE ADVANCE INFORMATION NEW PRODUCT 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) Max ID TA = +25C -100V 250m @ VGS = -10V -2.3A

Description

This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications

 Motor Control  DC-DC Converters  Power Management Functions  Uninterrupted Power Supply Features and Benefits  Low Gate Drive  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  An Automotive-Compliant Part is Available Under Separate Datasheet (DMP10H400SEQ) Mechanical Data  Case: SOT223  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals Connections: See Diagram Below  Terminals: Finish - Matte Tin Annealed over Copper Lead Frame. Solderable per MIL-STD-202, Method 208  Weight: 0.112 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMP10H400SE-13 SOT223 2,500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information Top View SOT223 Equivalent Circuit P400SE YWW D S G = Manufacturer’s Marking P400SE = Marking Code YWW = Date Code Marking Y or Y= Year (ex: 5 = 2015) WW = Week (01 to 53) Pin Out - Top View

Document Number DS37841 Rev. 3 - 2 2 of 7 www.diodes.com November 2015 © Diodes Incorporated DMP10H400SE ADVANCE INFORMATION NEW PRODUCT Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -100 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current, VGS = -10V (Note 5) Steady State TC = +25° C TA = +25°C ID -6.0 -2.3 A Maximum Body Diode Forward Current (Note 5) IS -1.9 A Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) IDM -10 A Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25° C PD 2.0 W TA = +70°C 1.3 Thermal Resistance, Junction to Ambient (Note 5) RθJA 62 ° C/W Total Power Dissipation (Note 5) TC = +25° C PD 13.7 W Thermal Resistance, Junction to Case (Note 5) RθJC 9.1 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS -100   V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS   1 µ A VDS = -80V, VGS = 0V Gate-Source Leakage IGSS   ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(TH) -1.0 -2.2 -3.0 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS(ON)  203 250 m VGS = -10V, ID = -5A  241 300 VGS = -4.5V, ID =-5A Diode Forward Voltage VSD  -0.9 -1.2 V VGS = 0V, IS = -5A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss  1239  pF VDS = -25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss  42  Reverse Transfer Capacitance Crss  28  Gate Resistance Rg  13   VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = -4.5V) Qg  8.4  nC VDS = -60V, ID = -5A Total Gate Charge (VGS = -10V) Qg  17.5  Gate-Source Charge Qgs  2.8  Gate-Drain Charge Qgd  3.2  Turn-On Delay Time tD(ON)  9.1  ns VDD = -50V, RG = 9.1, ID = -5A Turn-On Rise Time tR  14.9  Turn-Off Delay Time tD(OFF)  57.4  Turn-Off Fall Time tF  34.4  Body Diode Reverse Recovery Time tRR  25.2  ns VGS = 0V, IS = -5A, di/dt = 100A/μs Body Diode Reverse Recovery Charge QRR  24.5  nC VGS = 0V, IS = -5A, di/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing .

Figure 13. Transient Thermal Resistance

Document Number DS37841 Rev. 3 - 2 6 of 7 www.diodes.com November 2015 © Diodes Incorporated DMP10H400SE ADVANCE INFORMATION NEW PRODUCT Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. SOT223 SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e - - 4.60 e1 - - 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SOT223 Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 A1A D b e C L 0°-10° Q E 0.25 Seating Plane Gauge Plane Y X C C1 Y2

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