DMP1045U DIODES | Alldatasheet
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Document number: DS35051 Rev. 5 - 2 1 of 6 www.diodes.com April 2015 © Diodes Incorporated DMP1045U NEW PRODUCT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) max ID TA = +25°C -12V 31mΩ@ VGS = -4.5V 5.2A 45mΩ@ VGS =-2.5V 4.3A
Description
This MOSFET is designed to minimize the on -state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Applications
DC-DC Converters Power Management Functions Analog Switch Features and Benefits Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0072 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMP1045U-7 SOT-23 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002 /95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information Date Code Key Year 2010 2011 2012 2013 2014 2015 Code X Y Z A B C Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D ESD PROTECTED TO 3kV Top View Internal Schematic Pin Configuration D G S SOT23 15P = Marking Code YM = Date Code Marking Y or = Year (ex: A = 2013) M = Month (ex: 9 = September) 15P YM Y D S G Gate Protection Diode
Document number: DS35051 Rev. 5 - 2 2 of 6 www.diodes.com April 2015 © Diodes Incorporated DMP1045U NEW PRODUCT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -12 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current (Note 5) VGS = -4.5V Steady State TA = +25°C TA = +70°C ID 4.0 3.1 A Continuous Drain Current (Note 5) VGS = -2.5V Steady State TA = +25°C TA = +70°C ID 3.3 2.6 A Continuous Drain Current (Note 6) VGS = -4.5V Steady State TA = +25°C TA = +70°C ID 5.2 4.2 A Continuous Drain Current (Note 6) VGS = -2.5V Steady State TA = +25°C TA = +70°C ID 4.3 3.4 A Maximum Continuous Body Diode Forward Current (Note 6) IS 2 A Pulsed Drain Current (10µs pulse, duty cycle=1%) (Note 5) IDM 40 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD 0.8 W Thermal Resistance, Junction to Ambient (Note 5) RJA 168 °C/W Total Power Dissipation (Note 6) PD 1.3 W Thermal Resistance, Junction to Ambient (Note 6) RJA 99 °C/W Thermal Resistance, Junction to Case (Note 6) RJc 14.8 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -12 — — V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — -1.0 µA VDS = -12V, VGS = 0V Gate-Source Leakage IGSS — — ±10 µA VGS = 8V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) -0.3 -0.55 -1.0 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS(ON) — 26 31 mΩ VGS = -4.5V, ID = -4.0A 31 45 VGS = -2.5V, ID = -3.5A 45 75 VGS = -1.8V, ID = -2.7A Forward Transfer Admittance |Yfs| — 12 — S VDS = -5V, ID = -4A Diode Forward Voltage VSD — -0.6 — V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 1,357 — pF VDS = -10V, VGS = 0V f = 1.0MHz Output Capacitance Coss — 504 — pF Reverse Transfer Capacitance Crss — 235 — pF Gate Resistnace Rg — 14.1 — Ω VDS = 0V, VGS = 0V, f = 1.0MHz SWITCHING CHARACTERISTICS (Note 8) Total Gate Charge Qg — 15.8 — nC VGS = -4.5V, VDS = -10V, ID = -4A Gate-Source Charge Qgs — 2.0 — nC Gate-Drain Charge Qgd — 3.9 — nC Turn-On Delay Time tD(on) — 15.7 — ns VDS = -10V, VGS = -4.5V, RL = 2.5Ω, RG = 3.0Ω Turn-On Rise Time tr — 23.3 — ns Turn-Off Delay Time tD(off) — 91.2 — ns Turn-Off Fall Time tf — 106.9 — ns Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate . 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing.
Document number: DS35051 Rev. 5 - 2 3 of 6 www.diodes.com April 2015 © Diodes Incorporated DMP1045U NEW PRODUCT V , DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics DS I , DRAIN CURRENT (A)D 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 V , GATE SOURCE VOLTAGE(V) Fig. 2 Typical Transfer Characteristics GS I , DRAIN CURRENT (A)D 0 0.5 1 1.5 2 2.5 3 V = 5.0VDS I , DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage D R , DRAIN-SOURCE ON-RESISTANCE( )DS(ON) 0 4 8 12 16 200 0.02 0.04 0.06 0.08 V =2.5VGS V =4.5VGS V =8.0VGS I , DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature D R , DRAIN-SOURCE ON-RESISTANCE( )DS(ON) 0 4 8 12 16 20 0.01 0.02 0.03 0.04 0.05 T =150°CAT =125°CA T =85°CA T =25°CA T =-55°CA V = 4.5VGS -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J Fig. 5 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE (Normalized) DS(ON) 0.6 0.8 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J Fig. 6 On-Resistance Variation with Temperature R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) 0.01 0.02 0.03 0.04 0.05
Document number: DS35051 Rev. 5 - 2 4 of 6 www.diodes.com April 2015 © Diodes Incorporated DMP1045U NEW PRODUCT -50 -25 0 25 50 75 100 125 150 V , GATE THRESHOLD VOLTAGE (V)GS(th) T , JUNCTION TEMPERATURE ( C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature J 0.2 0.4 0.6 0.8 1.2 I = 250µAD I = 1mAD I , SOURCE CURRENT (A)S V , SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current SD T = 25 CA V , DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Drain-Source Leakage Current vs. Voltage DS I , LEAKAGE CURRENT (nA)DSS 100000 0 4 8 12 16 20 T = A 25 C T = A 85 C T = 150 CA 10000 1000 100 0.1 100 1000 10000 0 2 4 6 8 10 12 C , JUNCTION CAPACITANCE (pF)T f = 1MHz Ciss Coss Crss V , DRAIN-SOURCE VOLTAGE (V)DS Fig 10 Typical Junction Capacitance Q -(nC) Fig. 11 Gate Charge Characteristics G V (V)GS 0 4 8 12 16 20 24 28 V =-10V, I =-4ADS D
Document number: DS35051 Rev. 5 - 2 5 of 6 www.diodes.com April 2015 © Diodes Incorporated DMP1045U NEW PRODUCT 0.001 0.01 0.1 t1, PULSE DURATION TIME (sec) Fig. 12 Transient Thermal Resistance r(t), TRANSIENT THERMAL RESISTANCE R (t)=r(t) * R R =164C/W Duty Cycle, D=t1/ t2 JA JA JA Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. J K1 K GAUGE PLANE 0.25 H L M All 7° A C B D GF a SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8° All Dimensions in mm
Document number: DS35051 Rev. 5 - 2 6 of 6 www.diodes.com April 2015 © Diodes Incorporated DMP1045U NEW PRODUCT Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANT Y OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability a rising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described h erein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names an d markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is t he final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in th e safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporate d products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorpora ted and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 X E Y CZ