DMP1011LFV
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 7
Technical content
Document Number: DS38880 Rev. 3 - 2 1 of 7 www.diodes.com March 2017 © Diodes Incorporated DMP1011LFV NEW PRODUCT ADVANCE INFORMATION ADVANCED INFORMATION ADVANCED INFORMATION P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) Max ID Max TC = +25° C -12V 11.7mΩ @ VGS = -4.5V -19A 18.6mΩ @ VGS = -2.5V -15A
Description
This MOSFET is designed to minimize the on -state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Backlighting Power Management Functions DC-DC Converters Features and Benefits Low RDS(ON) – Ensures On-State Losses are Minimized Small Form Factor Thermally Efficient Package Enables Higher Density End Products (PowerDI® ) Occupies just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: PowerDI3333-8 (Type UX) Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMP1011LFV-7 PowerDI3333-8 (Type UX) 2,000/Tape & Reel DMP1011LFV-13 PowerDI3333-8 (Type UX) 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm tota l Br + Cl) and <1000ppm antimony compounds. Marking Information T41 = Product Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 17 for 2017) WW = Week Code (01 to 53) Equivalent Circuit Top View N48 YYWW T41 PowerDI3333-8 (Type UX) Bottom View Pin Configuration PowerDI is a registered trademark of Diodes Incorporated.
Document Number: DS38880 Rev. 3 - 2 2 of 7 www.diodes.com March 2017 © Diodes Incorporated DMP1011LFV NEW PRODUCT ADVANCE INFORMATION ADVANCED INFORMATION ADVANCED INFORMATION Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -12 V Gate-Source Voltage VGSS - 6 V Continuous Drain Current (Note 6) VGS = 4.5V t<10s TA = +25°C TA = +70°C ID -13 -10 A Steady State TC = +25°C TC = +70°C ID -19 -15 A Maximum Continuous Body Diode Forward Current (Note 6) IS 3 A Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%) IDM 70 A Avalanche Current (Note 7) L = 0.3mH IAS 24 A Avalanche Energy (Note 7) L = 0.3mH EAS 86 mJ Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 1.05 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 118 ° C/W t<10s 83.5 Total Power Dissipation (Note 6) PD 2.16 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 57 ° C/W t<10s 40.3 Thermal Resistance, Junction to Case (Note 6) RθJC 11.7 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -12 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current (TJ = +25° C) IDSS — — -1 μA VDS = -9.6V, VGS = 0V Gate-Source Leakage IGSS — — -100 nA VGS = -6V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) -0.6 — -1.2 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) — 9.8 11.7 mΩ VGS = -4.5V, ID = -12A Diode Forward Voltage VSD — -0.8 -1.0 V VGS = 0V, IS = -16A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 913 — pF VDS = -6V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 458 — Reverse Transfer Capacitance Crss — 53 — Gate Resistance Rg — 1.85 — Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = -6V) Qg — 9.5 — nC VDS = -6V, ID = -12A Total Gate Charge (VGS = -4.5V) Qg — 7.1 — Gate-Source Charge Qgs — 1.4 — Gate-Drain Charge Qgd — 1.1 — Turn-On Delay Time tD(ON) — 6.3 — ns VDS = -6V, VGS = -4.5V, RL = 1Ω, Rg = 4.7Ω, ID =-12A Turn-On Rise Time tR — 2.6 — Turn-Off Delay Time tD(OFF) — 14.4 — Turn-Off Fall Time tF — 3.9 — Body Diode Reverse Recovery Time tRR — 13.5 — ns IF = -12A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge QRR — 2.5 — nC IF = -12A, dI/dt = 100A/μs Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep T J = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing.
Document Number: DS38880 Rev. 3 - 2 6 of 7 www.diodes.com March 2017 © Diodes Incorporated DMP1011LFV NEW PRODUCT ADVANCE INFORMATION ADVANCED INFORMATION ADVANCED INFORMATION Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 (Type UX) Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 (Type UX) X Y C PowerDI3333-8 (Type UX) Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 -- b 0.25 0.40 0.32 c 0.10 0.25 0.15 D 3.20 3.40 3.30 D1 2.95 3.15 3.05 D2 2.30 2.70 2.50 E 3.20 3.40 3.30 E1 2.95 3.15 3.05 E2 1.60 2.00 1.80 E2a 0.95 1.35 1.15 E2b 0.10 0.30 0.20 e 0.65 BSC k 0.50 0.90 0.70 L 0.30 0.50 0.40 θ 0° 12° 10° All Dimensions in mm Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 Y4 0.540 D EE1 A c L L E2b b e k D2 E2a
Document Number: DS38880 Rev. 3 - 2 7 of 7 www.diodes.com March 2017 © Diodes Incorporated DMP1011LFV NEW PRODUCT ADVANCE INFORMATION ADVANCED INFORMATION ADVANCED INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any lia bility arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or prod ucts described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product name s and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support device s or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further, Cus tomers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com