DMN10H220LE
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 7
Technical content
Document number: DS36475 Rev. 4 - 2 1 of 7 www.diodes.com November 2017 © Diodes Incorporated DMN10H220LE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) max ID TA = +25°C 100V 220mΩ @ VGS = 10V 2.3A 250mΩ @ VGS = 4.5V 2.1A
Description
This new generation MOSFET is designed to minimize the on -state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
DC-DC Converters Power Management Functions Features and Benefits Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMN10H220LEQ) Mechanical Data Case: SOT223 Case Material: Molded Plastic, “Green” Molding Compound ; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Below Terminals: Finish - Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (Approximate) Ordering Information (Note 4) Part Number Compliance Case Packaging DMN10H220LE-13 Standard SOT223 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Top View SOT223 D S G Equivalent Circuit 10H220 YWW Pin Out - Top View = Manufacturer’s Marking 10H220 = Marking Code YWW = Date Code Marking Y or Y= Year (ex: 7 = 2017) WW = Week (01 to 53) SOT223
Document number: DS36475 Rev. 4 - 2 2 of 7 www.diodes.com November 2017 © Diodes Incorporated DMN10H220LE Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS 20 V Continuous Drain Current (Note 5) VGS = 10V TA = +25° C TA = +70° C ID 2.3 1.8 A TC = +25° C TC = +70° C ID 6.2 4.9 A Maximum Continuous Body Diode Forward Current (Note 5) IS 1.5 A Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) IDM 8 A Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25° C PD 1.8 W TA = +70° C 1.1 Thermal Resistance, Junction to Ambient (Note 5) RJA 69 ° C/W Total Power Dissipation (Note 5) TC = +25° C PD 14 W Thermal Resistance, Junction to Case (Note 5) RJC 8.7 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS 100 — — V VGS = 0V, ID = 250µ A Zero Gate Voltage Drain Current IDSS — — 1 µA VDS = 100V, VGS = 0V Gate-Source Leakage IGSS — — ± 100 nA VGS = ±16V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(TH) 1 1.7 2.5 V VDS = VGS, ID = 250µ A Static Drain-Source On-Resistance RDS(ON) — 155 220 mΩ VGS = 10V, ID = 1.6A — 190 250 VGS = 4.5V, ID = 1.3A Diode Forward Voltage VSD — 0.8 1.5 V VGS = 0V, IS = 1.1A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss — 401 — pF VDS = 25V, VGS = 0V f = 1.0MHz Output Capacitance Coss — 22 — Reverse Transfer Capacitance Crss — 17 — Gate Resistance Rg — 2.1 — Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 4.5V) Qg — 4.1 — nC VDS = 50V, ID = 1.6A Total Gate Charge (VGS = 10V) Qg — 8.3 — Gate-Source Charge Qgs — 1.5 — Gate-Drain Charge Qgd — 2 — Turn-On Delay Time tD(ON) — 6.8 — ns VDS = 50V, VGS = 4.5V, RG = 6.8ID = 1.0A Turn-On Rise Time tR — 8.2 — Turn-Off Delay Time tD(OFF) — 7.9 — Turn-Off Fall Time tF — 3.6 — Reverse Recovery Time tRR — 17 — ns IS = 1.1A, di/dt =100A/µs Reverse Recovery Charge QRR — 9.8 — nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1 -inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing.
Document number: DS36475 Rev. 4 - 2 5 of 7 www.diodes.com November 2017 © Diodes Incorporated DMN10H220LE t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance r(t), TRANSIENT THERMAL RESISTANCE D = 0.5 D = 0.7 D = 0.9 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse R (t) = r(t) * R R = 99 癈 /W Duty Cycle, D = t1/ t2 JA JA JA 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 RθJA(t) = r(t) * RθJA RθJA = 99℃/W Duty Cycle, D = t1 / t2
Document number: DS36475 Rev. 4 - 2 6 of 7 www.diodes.com November 2017 © Diodes Incorporated DMN10H220LE Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT223 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT223 SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e - - 4.60 e1 - - 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 Y X C C1 Y2 A1A D b e C L 0°-10° Q E 0.25 Seating Plane Gauge Plane
Document number: DS36475 Rev. 4 - 2 7 of 7 www.diodes.com November 2017 © Diodes Incorporated DMN10H220LE IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products d escribed herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product name s and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this docum ent is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further, Cust omers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com