DMN1004UFV
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 7
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Low RDS(ON) – Ensures On-State Losses are Minimized Small Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Case: PowerDI®3333-8 (Type UX) Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMN1004UFV-7 PowerDI3333-8 (Type UX) 2,000/Tape & Reel DMN1004UFV-13 PowerDI3333-8 (Type UX) 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information Equivalent Circuit UF4 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 16 = 2016) WW = Week Code (01 to 53) UF4 YYWW Top View Bottom View S S S G D D D D Pin1 D S G Gate Protection Diode ESD PROTECTED PowerDI is a registered trademark of Diodes Incorporated.
Document number: DS38933 Rev. 3 - 2 2 of 7 www.diodes.com January 2017 © Diodes Incorporated DMN1004UFV Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 12 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current, VGS = 4.5V (Note 7) TC = +25° C TA = +70° C ID 70 A TC = +70°C TA = +70° C Pulsed Drain Current (380μs Pulse, Duty Cycle = 1%) IDM 80 A Maximum Continuous Body Diode Forward Current (Note 7) IS 70 A Avalanche Current, L = 0.1mH (Note 8) IAS 34 A Avalanche Energy, L = 0.1mH (Note 8) EAS mJ Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 0.9 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 134 ° C/W Total Power Dissipation (Note 6) PD 1.9 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 66 ° C/W Thermal Resistance, Junction to Case (Note 7) RθJC 3.4 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BVDSS 12 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS — — 1 μA VDS = 9.6V, VGS = 0V Gate-Source Leakage IGSS — — ±10 μA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 9) Gate Threshold Voltage VGS(TH) 0.3 — 1.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 2.8 3.8 mΩ VGS = 4.5V, ID = 15A — 3.2 5.1 VGS = 2.5V, ID = 10A Diode Forward Voltage VSD — 0.75 1.2 V VGS = 0V, IS = 3.2A DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss — 2,385 — pF VDS = 6V, VGS = 0V, f = 1MHz Output Capacitance Coss — 678 — pF Reverse Transfer Capacitance Crss — 520 — pF Gate Resistance RG — 2.2 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) QG — 26 — nC VDS = 6V, ID = 10A Total Gate Charge (VGS = 8V) QG — 47 — nC Gate-Source Charge QGS — 2.8 — nC Gate-Drain Charge QGD — 5.3 — nC Turn-On Delay Time tD(ON) — 5.3 — ns VDD = 6V, VGS = 4.5V, RG = 1Ω, ID = 5A Turn-On Rise Time tR — 10.7 — ns Turn-Off Delay Time tD(OFF) — 31.6 — ns Turn-Off Fall Time tF — 16.9 — ns Reverse Recovery Time tRR — 24.3 — ns IF = 2A, di/dt = 100A/μs Reverse Recovery Charge QRR — 7.4 — nC Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1 -inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. IAS and EAS rating are based on low frequency and duty cycles to keep T J = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing.
Document number: DS38933 Rev. 3 - 2 5 of 7 www.diodes.com January 2017 © Diodes Incorporated DMN1004UFV 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 D = 0.5 D = 0.7 D = 0.9 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse R (t) = r(t) * R JA JA R = 130° C/WJA Duty Cycle, D = t1/ t2 r(t), TRANSIENT THERMAL RESISTANCE t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance
Document number: DS38933 Rev. 3 - 2 6 of 7 www.diodes.com January 2017 © Diodes Incorporated DMN1004UFV Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 (Type UX) Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 (Type UX) D EE1 A c L L E2b b e k D2 E2a X Y C PowerDI3333-8 (Type UX) Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 -- b 0.25 0.40 0.32 c 0.10 0.25 0.15 D 3.20 3.40 3.30 D1 2.95 3.15 3.05 D2 2.30 2.70 2.50 E 3.20 3.40 3.30 E1 2.95 3.15 3.05 E2 1.60 2.00 1.80 E2a 0.95 1.35 1.15 E2b 0.10 0.30 0.20 e 0.65 BSC k 0.50 0.90 0.70 L 0.30 0.50 0.40 θ 0° 12° 10° All Dimensions in mm Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 Y4 0.540
Document number: DS38933 Rev. 3 - 2 7 of 7 www.diodes.com January 2017 © Diodes Incorporated DMN1004UFV IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of th is document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product name s and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the ex press written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incor porated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com