DMN1004UFDF DIODES | Alldatasheet
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0.6mm Profile – Ideal for Low-Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage Low On-Resistance ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Case: U-DFN2020-6 (Type F) Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.007 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMN1004UFDF-7 U-DFN2020-6 (Type F) 3,000/Tape & Reel DMN1004UFDF-13 U-DFN2020-6 (Type F) 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2017 2018 2019 2020 2021 2022 2023 2024 2025 Code E F G H I J K L M Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D 4U = Product Type Marking Code YM = Date Code Marking Y = Year (ex: E = 2017) M = Month (ex: 9 = September) YM Equivalent Circuit ESD PROTECTED D S G Gate Protection Diode U-DFN2020-6 (Type F) Pin1 Bottom View Top View Pin Out Bottom View
Datasheet number: DS39159 Rev. 2 - 2 2 of 7 www.diodes.com May 2017 © Diodes Incorporated DMN1004UFDF Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 12 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25° C TA = +70° C ID 15 12 A Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%) IDM 70 A Maximum Body Diode Continuous Current (Note 6) IS 3 A Avalanche Current (Note 7) L = 0.1mH IAS 34 A Avalanche Energy (Note 7) L = 0.1mH EAS 55 mJ Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25° C PD 0.9 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 167 ° C/W Total Power Dissipation (Note 6) TA = +25° C PD 2.1 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 72 ° C/W Thermal Resistance, Junction to Case (Note 6) RθJC 22 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 12 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25° C IDSS — — 1 µA VDS = 9.6V, VGS = 0V Gate-Source Leakage IGSS — — ±10 µA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) 0.3 — 1.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 4.1 4.8 mΩ VGS = 4.5V, ID = 15A — 4.5 7.0 VGS = 2.5V, ID = 10A Diode Forward Voltage VSD — 0.6 1.2 V VGS = 0V, IS = 3.2A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance CISS — 2,385 — pF VDS = 6V, VGS = 0V, f = 1.0MHz Output Capacitance COSS — 678 — pF Reverse Transfer Capacitance CRSS — 520 — pF Gate Resistance RG — 2.2 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) QG — 26 — nC VDS = 6V, ID = 10A Total Gate Charge (VGS = 10V) QG — 47 — nC Gate-Source Charge QGS — 2.8 — nC Gate-Drain Charge QGD — 5.3 — nC Turn-On Delay Time tD(ON) — 5.3 — ns VDS = 6V, ID = 5.0A VGS = 4.5V, RG = 1.0Ω Turn-On Rise Time tR — 10.7 — ns Turn-Off Delay Time tD(OFF) — 31.6 — ns Turn-Off Fall Time tF — 16.9 — ns Reverse Recovery Time tRR — 24.3 — ns IF = 2.0A, di/dt = 100A/μs Reverse Recovery Charge QRR — 7.4 — nC Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing.
Datasheet number: DS39159 Rev. 2 - 2 5 of 7 www.diodes.com May 2017 © Diodes Incorporated DMN1004UFDF 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 D = 0.5 D = 0.7 D = 0.9 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse R (t) = r(t) * R JA JA R = 72° C/WJA Duty Cycle, D = t1/ t2 r(t), TRANSIENT THERMAL RESISTANCE t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance
Datasheet number: DS39159 Rev. 2 - 2 6 of 7 www.diodes.com May 2017 © Diodes Incorporated DMN1004UFDF Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type F) D E e b L A Seating Plane z(4x) E2a D2a e3 e4 k U-DFN2020-6 (Type F) Dim Min Max Typ A 0.57 0.63 0.60 A1 0.00 0.05 0.03 A3 - - 0.15 b 0.25 0.35 0.30 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 D2a 0.33 0.43 0.38 E 1.95 2.05 2.00 E2 1.05 1.25 1.15 E2a 0.65 0.75 0.70 e 0.65 BSC e2 0.863 BSC e3 0.70 BSC e4 0.325 BSC k 0.37 BSC k1 0.15 BSC k2 0.36 BSC L 0.225 0.325 0.275 z 0.20 BSC z1 0.110 BSC z2 0.20 BSC All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type F) Pin1 Y4Y2 YXC Dimensions Value (in mm) C 0.650 X 0.400 X1 0.480 X2 0.950 X3 1.700 Y 0.425 Y1 0.800 Y2 1.150 Y3 1.450 Y4 2.300
Datasheet number: DS39159 Rev. 2 - 2 7 of 7 www.diodes.com May 2017 © Diodes Incorporated DMN1004UFDF IMPORTANT NOTICE DIODES INCORPORATE D MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any li ability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or pro ducts described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product name s and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of thi s document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support tha t may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com