DMN100-7

DMN100 DIODES | Alldatasheet

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/c183Extremely Low On-Resistance: 170m/c87@V GS = 4.5V /c183High Drain Current: 1.1A /c183Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits Maximum Ratings @ TA = 25/c176C unless otherwise specified Characteristic Symbol DMN100 Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage Continuous VGSS /c17720 V Drain Current Continuous Pulsed ID /c1771.1 /c1774.0 A Total Power Dissipation Pd 500 mW Thermal Resistance, Junction to Ambient R/c113JA 250 K/W Operating and Storage Temperature Range Tj,T STG -55 to +150 /c176C Notes: 1. Pulse width /c163300/c109s, duty cycle /c1632%. /c183Case: SC-59, Molded Plastic /c183Case Material - UL Flammability Rating Classification 94V-0 /c183Terminals: Solderable per MIL-STD-202, Method 208 /c183Terminal Connections: See Diagrams /c183Weight: 0.008 grams (approx.) /c183Ordering Information, See Sheet 2 Mechanical Data A E J L M B C H G D K TOP VIEW D SG SC-59 Dim Min Max A 0.30 0.50 B 1.40 1.80 C 2.50 3.00 D 0.85 1.05 E 0.30 0.70 G 1.70 2.10 H 2.70 3.10 J /c190 0.10 K 1.00 1.40 L 0.55 0.70 M 0.10 0.35 All Dimensions in mm

DS30049 Rev. 5 - 2 2 of 3 DMN100 Electrical Characteristics @ TA = 25/c176C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 1) Drain-Source Breakdown Voltage BVDSS 30 /c190/c190 V VGS = 0V, ID = 250/c109A Zero Gate Voltage Drain Current @ T j = 25/c176C @T j = 125/c176C IDSS /c190/c190 1.0 10 µA VDS = 24V, VGS = 0V Gate-Body Leakage IGSS /c190/c190 /c177100 nA VGS = /c17712V, VDS = 0V ON CHARACTERISTICS (Note 1) Gate Threshold Voltage VGS(th) 1.0 /c190 3.0 V VDS = 10V, ID =1.0mA Static Drain-Source On-Resistance RDS (ON) /c190/c190 0.170 0.240 /c87 VGS = 4.5V, ID = 0.5A VGS = 10V, ID = 1.0A Forward Transconductance gFS 1.3 2.4 /c190 S VDS = 10V, ID =0.5A DYNAMIC CHARACTERISTICS Input Capacitance Ciss /c190 150 /c190 pF VDS = 10V, VGS = 0V f = 1.0MHzOutput Capacitance Coss /c190 90 /c190 pF Reverse Transfer Capacitance Crss /c190 30 /c190 pF Total Gate Charge Qg /c190 5.5 /c190 nC VDS = 24V, ID = 1.0A, VGS = 10VGate-to-Source Charge Qgs /c190 0.8 /c190 nC Gate-to-Drain Charge Qgd /c190 1.3 /c190 nC SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) /c190 10 /c190 ns VDD = 10V, ID = 0.5A, VGS = 5.0V, RGEN = 50/c87 Turn-Off Delay Time tD(OFF) /c190 25 /c190 ns Turn-On Rise Time tr /c190 15 /c190 ns Turn-Off Fall Time tf /c190 45 /c190 ns SOURCE- DRAIN RATINGS (BODY DIODE) Continuous Source Current IS /c190/c190 0.54 A /c190 Pulse Source Current ISM /c190/c190 4.0 A /c190 Forward Voltage VSD /c190/c190 1.2 V IF = 1.0A, VGS = 0V Reverse Recovery Time trr /c190 35 /c190 ns IF = 1.0A, di/dt = 50A//c109s Notes: 1. Pulse width /c163300/c109s, duty cycle /c1632%. Ordering Information (Note 2) Device Packaging Shipping DMN100-7 SC-59 3000/Tape & Reel Marking Information XXX X XXX = Product Type Marking Code X = Assembly Lot No. [0-9, A-Z, except G, I, J, O, Q, W]

DS30049 Rev. 5 - 2 3 of 3 DMN100 0.5 1.0 01 2 3 4 5 I , DRAIN CURRENT (A)D V , DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics DS 3.0V 2.5V 1.5 2.0 2.5 3.0 3.5 4.0 V = 10V 5.0V 4.5V 4.0V 3.5V GS 0.01 0.1 1.0 0 1 2 3 4 R, N ORMALIZED DRAIN-SOURCE ON-RESIST ANCE DS(ON) I , DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current D V = 4.5Vgs V= 1 0 Vgs 0.05 0.10 -50 R, N ORMALIZED DRAIN-SOURCE ON-RESIST ANCE DS(ON) T , JUNCTION TEMPERATURE ( C) Fig. 3 On-Resistance vs Junction Temperature j /c176 V = 4.5V, RGS DS @ 0.5A V = 10V, RGS DS @ 1.0A 0 50 150 100 0.15 0.20 0.25 0.30 0.5 1.0 1.5 2.0 2.5 V , GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs Gate-Source Voltage GS V = 10VGS T = 25 CA /c176 3.0 3.5 23 4 5 4.0 R, N ORMALIZED DRAIN-SOURCE ON-RESIST ANCE DS(ON)