DML3010ALFDS-7

DML3010ALFDS DIODES | Alldatasheet

Document overview

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Technical content

Document number: DS45667 Rev. 2 - 2 1 of 12 www.diodes.com June 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. DML3010ALFDS SINGLE-CHANNEL SMART LOAD SWITCH

Description

The DML3010ALFDS load switch provides a component and area - reducing solution for efficient power domain switching. In addition to integrated control functionality with ultra-low on-resistance, this device offers system safeguards and monitoring via fault protection and power-good signaling. This cost -effective solution is ideal for power - management and hot -swap applications requiring low power consumption in a small footprint.

Applications

• Portable electronics and systems
• Notebook and tablet computers
• Telecom, networking, medical, and industrial equipment
• Set-top boxes, servers, and gateways
• Hot-swap devices and peripheral ports Features and Benefits
• Advanced Controller with Charge Pump
• Integrated N-Channel MOSFET with Ultra-Low RON
• Input-Voltage Range 0.5V to 20V
• Power-Good Signal
• Thermal Shutdown
• VCC Undervoltage Lockout
• Short-Circuit Protection
• Extremely Low Standby Current
• Load Bleed (Quick Discharge)
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data
• Package: V-DFN2020-8
• Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish — NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.011 grams (Approximate) Ordering Information (Note 4) Part Number Package Packing Qty. Carrier DML3010ALFDS-7 V-DFN2020-8 (Type N) 3000 Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Bottom View Top View V-DFN2020-8 (Type N) Pin 1 Top View

Document number: DS45667 Rev. 2 - 2 2 of 12 www.diodes.com June 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. DML3010ALFDS Marking Information Site 1 Site 2 Date Code Key Year 2023 2024 2025 2026 2027 2028 2029 2030 2031 2032 2033 2034 Code 3 4 5 6 7 8 9 0 1 2 3 4 Week 1-26 27-52 53 Code A-Z a-z z Internal Code Sun Mon Tue Wed Thu Fri Sat Code T U V W X Y Z Typical Application Circuit DML3010 VOUT VOUT PG BLEE D VIN EN VCC GND VVIN OF F ON VVCc VVOUT RBLEED 100Ω RPG 100kΩ CVOUT 0.1uF CVCC 1uF CVIN 1uF VIN VTERM DML3010ALFDS BLEED LS30A = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 24 = 2024) WW = Week Code (01 to 53) Y LS30A Y WW V-DFN2020-8 (Type N) V-DFN2020-8 (Type N) LS30A YWX LS30A = Product Type Marking Code YWX = Date Code Marking Y = Year (ex: 4 = 2024) W = Week (ex: a = Week 27; z Represents Week 52 and 53) X = Internal Code (ex: U = Monday) 1µF 1µF 0.1µF

Document number: DS45667 Rev. 2 - 2 3 of 12 www.diodes.com June 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. DML3010ALFDS Pin Description Pin Number Pin Name Pin Function 1, 9 VIN Drain of internal MOSFET, pin 1 must connect to pin 9

2 EN Active-high digital input used to turn on the MOSFET; pin has an internal pulldown resistor to GND

3 VCC Supply voltage to controller (3.0V to 5.5V)

4 GND Controller ground

5 BLEED Load bleed connection, must be tied to VOUT through a resistor ≤ 1kΩ

6 PG Active-high, open-drain output that indicates when the gate of the MOSFET is fully charged,

external pullup resistor ≥ 1kΩ to an external voltage source required; tie to GND if not used. 7, 8 VOUT Source of internal MOSFET connected to load Function Block Diagram Thermal Undervoltage Short-Circuit Protection Control Logic Gate Drive Bandgap, Biases Charge Pump VCC EN PG VIN GND BLEED VOUT

Document number: DS45667 Rev. 2 - 2 4 of 12 www.diodes.com June 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. DML3010ALFDS Absolute Maximum Rating Parameter Rating VIN, BLEED, VOUT to GND -0.3V to 24V EN, VCC, PG to GND -0.3V to 6V IMAX_DC 10.5A Storage Temperature (TS) -65° C to +150° C Recommended Operating Ranges Parameter Rating Supply Voltage (VCC) 3V to 5.5V Input Voltage (VIN) 0.5V to 20V Ambient Temperature (TA) -40° C to +85° C Junction Temperature (TJ) -40° C to +125°C Package Thermal Resistance (θJC) 5.3° C/W Package Thermal Resistance (θJA) 40° C/W *IMAX_DC defined as the maximum steady-state current the load switch can pass at room ambient temperature without entering thermal lockout. Electrical Characeristics (TA = +25° C, VVCC = 3.3V, VVIN = 5V = VTERM, CVIN = 1μF, CVOUT = 0.1μF, CVCC = 1μF, CSR = 1nF, unless otherwise specified.) Symbol Parameter Conditions Min Typ Max Unit VIN Input Voltage — 0.5 — 20 V VCC Supply Voltage — 3.0 — 5.5 V IDYN VCC Dynamic Supply Current VEN = VCC = 3V, VIN = 20V — 150 290 µA VEN = VCC = 5.5V, VIN = 1.8V — 200 390 µA ISTBY VCC Shutdown Supply Current VCC = 3V, VEN = 0 — 0.1 1 µA VCC = 5.5V, VEN = 0 — 0.1 2 µA VENH EN High-Level Voltage VCC = 3V to 5.5V 2.0 — — V VENL EN Low-Level Voltage VCC = 3V to 5.5V — — 0.8 V RBLEED Bleed Resistance VCC = 3V, VEN = 0 90 120 180 Ω VCC = 5.5V, VEN = 0 70 100 130 Ω IBLEED Bleed Pin Leakage Current VCC = VEN = 3V, VIN = 1.8V — 3 — µA VCC = VEN = 3V, VIN = 20V — 32 — µA VPGL PG Output Low Voltage VCC = 3V, ISINK = 5mA — — 0.2 V IPG PG Output Leakage Current VCC = 3V, VTERM = 3.3V — — 100 nA Switching Device RON Switch On-State Resistance VCC = 3.3V, VIN = 1.8V — 10 12.5 mΩ VCC = 3.3V, VIN = 5V — 10 12.5 mΩ VCC = 3.3V, VIN = 12V — 10 12.5 mΩ VCC = 5V, VIN = 1.8V — 7.5 10.5 mΩ VCC = 5V, VIN = 5V — 7.5 10.5 mΩ VCC = 5V, VIN = 12V — 7.5 10.5 mΩ ILEAK Input Shutdown Supply Current VEN = 0, VIN = 20V — — 10 µA RPDEN EN Pulldown Resistance — 70 100 130 kΩ Fault Protection TOTP Thermal Shutdown Threshold VCC = 3V to 5.5V — +145 — °C TOTPHYS Thermal Shutdown Hysteresis VCC = 3V to 5.5V — +20 — °C VUVLO VCC Lockout Threshold — 2.3 2.55 2.8 V VUVLOHYS VCC Lockout Hysteresis — — 200 — mV VSCP Short-Circuit Protection Threshold VCC = 3.3V, VIN = 0.5V 140 240 350 mV VCC = 3.3V, VIN = 1.2V to 12V 120 240 500 mV VCC = 3.3V, VIN = 20V 100 250 500 mV

Document number: DS45667 Rev. 2 - 2 4 of 12 www.diodes.com June 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. DML3010ALFDS Switching Characeristics (TA = +25° C, VTERM = VVCC = 5V, RPG = 100kΩ, RVOUT = 10Ω, CVIN = 1μF, CVOUT = 0.1μF, CVCC = 1μF, unless otherwise specified.) Symbol Parameter Condition Min Typ Max Unit VIN = 1.8V tON Output Turn-On Delay Time VCC = 3.3V 100 350 600 µs VCC = 5V 60 220 400 tOFF Output Turn-Off Delay Time VCC = 3.3V — 1 2 VCC = 5V — 1 2 tPGOFF Power-Good Turn-Off Time VCC = 3.3V — 20 100 ns VCC = 5V — 15 100 SR Output Slew Rate VCC = 3.3V 1 10 20 kV/s VCC = 5V 1 10 20 VIN = 12V tON Output Turn-On Delay Time VCC = 3.3V 100 300 600 µs VCC = 5V 60 170 400 tOFF Output Turn-Off Delay Time VCC = 3.3V — 1 2 VCC = 5V — 1 2 tPGOFF Power-Good Turn-Off Time VCC = 3.3V — 20 100 ns VCC = 5V — 15 100 SR Output Slew Rate VCC = 3.3V 5 20 40 kV/s VCC = 5V 5 20 40 EN VOUT 50%50% 90% 10% tON tOFF 10% tR PG 50% tPG,OFF tPG,ON 50% Figure 1 Timing Diagram

Document number: DS45667 Rev. 2 - 2 5 of 12 www.diodes.com June 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. DML3010ALFDS Performance Characteristics (@TA = +25° C, unless otherwise specified.) ON Resistance vs. Input Voltage Supply Dynamic Current vs. Input Voltage Supply Dynamic Current vs. Supply Voltage Bleed Resistance vs. Supply Voltage Bleed Leakage Current vs. Input Voltage Bleed Leakage Current (µA) Resistance Input Voltage (V) (µA) (µA) (µA)

Document number: DS45667 Rev. 2 - 2 6 of 12 www.diodes.com June 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. DML3010ALFDS Performance Characteristics (@TA = +25° C, unless otherwise specified.) (continued) Turn ON Response Turn OFF Response VVIN = 1.8V, VVCC = 3.3V, VEN = 0 to 3.3V, RL = 10Ω VVIN = 1.8V, VVCC = 3.3V, VEN = 0 to 3.3V, RL = 10Ω Turn ON Response Turn OFF Response VVIN = 5V, VVCC = 3.3V, VEN = 0 to 3.3V, RL = 10Ω VVIN = 5V, VVCC = 3.3V, VEN = 0 to 3.3V, RL = 10Ω Turn ON Response Turn OFF Response VVIN = 12V, VVCC = 3.3V, VEN = 0 to 3.3V, RL = 10Ω VVIN = 12V, VVCC = 3.3V, VEN = 0 to 3.3V, RL = 10Ω

Document number: DS45667 Rev. 2 - 2 7 of 12 www.diodes.com June 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. DML3010ALFDS Performance Characteristics (@TA = +25° C, unless otherwise specified.) (continued) Turn ON Response Turn OFF Response VVIN = 1.8V, VVCC = 5V, VEN = 0 to 3.3V, RL = 10Ω VVIN = 1.8V, VVCC = 5V, VEN = 0 to 3.3V, RL = 10Ω Turn ON Response Turn OFF Response VVIN = 5V, VVCC = 5V, VEN = 0 to 3.3V, RL = 10Ω VVIN = 5V, VVCC = 5V, VEN = 0 to 3.3V, RL = 10Ω Turn ON Response Turn OFF Response VVIN = 5V, VVCC = 5V, VEN = 0 to 3.3V, RL = 10Ω VVIN = 5V, VVCC = 5V, VEN = 0 to 3.3V, RL = 10Ω

Document number: DS45667 Rev. 2 - 2 8 of 12 www.diodes.com June 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. DML3010ALFDS

Application Information

The DML3010ALFDS is a single-channel load switch which integrates PG indicator in an 8-pin V-DFN2020-8 (Type N) package. The device contains an N-channel MOSFET that can operate over an input-voltage range of 0.5V to 20V and can support a maximum continuous current of 10.5A. The wide input-voltage range and high-current capability enable the device which can be used across multiple designs and end equipment. 10mΩ on- resistance minimizes the voltage drop across the load switch and power loss from the load switch. Integrated PG indicator notifies the system about the status of the load switch to facilitate seamless power sequencing. During shutdown, the device has very low leakage current, thereby reducing unnecessary leakages for downstream modules during standby. The DML3010ALFDS also has a 100Ω on-chip resistor embedded on BLEED pin for quick discharge of the output when switch is disabled. Enable Control The DML3010ALFDS device allows for enabling the MOSFET in an active -high configuration. When the VCC supply pin has an adequate voltage applied and the EN pin is at logic -high level, the MOSFET will be enabled. Similarly, when the EN pin is at logic -low level, the MOSFET will be disabled. An internal pulldown resistor to ground on the EN pin ensures that the MOSFET will be disabled when not being driven. Power Sequencing The DML3010ALFDS device functions with fixed power sequence. The performance of output turn-on delay may vary from what is specified. To achieve the specified performance, recommended power sequences are: 1.) VCC → VIN → VEN 2.) VIN → VCC → VEN Load Bleed (Quick Discharge) The DML3010ALFDS device has an internal bleed discharge device, which is used to bleed the charge off from the load to ground after the MOSFET is disabled. The bleed discharge device is enabled whenever the MOSFET is disabled. The MOSFET and the bleed device are never concurrently active. The BLEED pin must be connected to VOUT either directly or through an external resistor, R EXT. REXT should not exceed 1kΩ and can be used to increase the total bleed resistance. To ensure that the power dissipated across RBLEED is kept at a safe level, dissipated power of RBLEED needs to be detail calculated. The maximum continuous power that can be dissipated across RBLEED is 0.4W. REXT can be used to decrease the amount of power dissipated across RBLEED. Power Good The DML3010ALFDS device has a power-good output (PG) that can be used to indicate when the gate of the MOSFET is driven high and the switch is on with the on-resistance close to its final value (full load ready). The PG pin is an active-high, open-drain output that requires an external pullup resistor, RPG, greater than or equal to 1kΩ to an external voltage source, VTERM, compatible with input levels of those devices connected to this pin. Table 1 contains PG turn-on time values measured on a typical device. PG turn-on time shown below are valid for the power-up sequence 1. Table 1. PG Turn-On Time the PG pin should be tied to GND.

Document number: DS45667 Rev. 2 - 2 9 of 12 www.diodes.com June 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. DML3010ALFDS Application Information (continued) Short-Circuit Protection The DML3010ALFDS device is equipped with short-circuit protection that is used to help protect the part and the system from a sudden high-current event, such as the output, VOUT, being shorted to ground. This circuitry is only active when the gate of MOSFET is fully charged. Once active, the circuitry monitors the difference in the voltage on the VIN pin and the voltage on the BLEED pin. In order for the VOUT voltage to be monitored through the BLEED pin, it is required that BLEED pin be connected to V OUT either directly or through a resistor, REXT, which should not exceed 1kΩ. With the BLEED pin connected to VOUT, the short-circuit protection is able to monitor the voltage drop across the MOSFET. If the voltage drop across the MOSFET is greater than or equal to the short-circuit protection threshold voltage, the MOSFET is turned off immediately and the load bleed is activated. The part remains latched in this off state until EN is toggled or V CC supply voltage is cycled, at which point the MOSFET will be turn-on delay and slew rate. The current through the MOSFET that will cause a short-circuit event can be calculated by dividing the short-circuit protection threshold by expected on-resistance of the MOSFET. Thermal Shutdown The DML3010ALFDS device is equipped with thermal shutdown protection for internal ly or externally generated excessive temperatures. This circuitry is disabled when EN is not active to reduce standby current. When an overtemperature condition is detected, the MOSFET is turned off immediately and the load bleed is active. The part comes out of thermal shutdown when the jun ction temperature decreases to a safe operating temperature as dictated by the thermal hysteresis. Upon exiting a thermal shutdown state, and if EN remains active, the MOSFET will be turned on in a controlled fashion with the normal output turn-on delay and slew rate. Undervoltage Lockout The DML3010ALFDS device is equipped with undervoltage lockout protection. The DML3010ALFDS turns the MOSFET off and activates the load bleed when the input voltage V CC is less than or equal to the undervoltage lockout threshold. This circuitry is disabled when EN is not active to reduce standby current. If the VCC voltage rises above the undervoltage lockout threshold and EN remains active, the MOSFET will be turned on in a controlled fashion with the normal output turn-on delay and slew rate. PCB Layout Consideration 1. Place the input/output capacitors CVIN and CVOUT as close as possible to the VIN and VOUT pins. 2. The power traces which are VIN trace, VOUT trace and GND trace should be short, wide and directly for minimizing parasitic inductance. 3. Place feedback resistance RBLEED as close as possible to BLEED pin. 4. Place CVCC capacitor near the device pin. 5. Connect the signal ground to the GND pin, and keep a single connection from GND pin to the power ground behind the input or o utput capacitors. 6. For better power dissipation, via holes are recommended to connect the exposed pad’s landing area to a large copper polygon on the other side of the printed circuit board. The copper polygons and exposed pad shall be connected to VIN pin on the printed circuit board. VIN EN Vcc GND VOUT VOUT PG BLEED GND (Power) CVIN CVOUT CVCC VOUT VIN GND (Signal) RBLEED VIN VTERM RPG

Document number: DS45667 Rev. 2 - 2 10 of 12 www.diodes.com June 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. DML3010ALFDS Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. V-DFN2020-8 (Type N) V-DFN2020-8 (Type N) Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 -- -- 0.152 b 0.20 0.30 0.25 D 1.95 2.05 2.00 D2 1.50 1.70 1.60 E 1.95 2.05 2.00 E2 0.80 1.00 0.90 e -- -- 0.50 k -- -- 0.31 L 0.19 0.29 0.24 z -- -- 0.125 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. V-DFN2020-8 (Type N) Dimensions Value (in mm) C 0.500 G 0.150 G1 0.210 X 0.350 X1 0.850 X2 1.700 X3 1.850 Y 0.440 Y1 0.440 Y2 1.000 Y3 2.300 S e a tin g P la n e k D E e b L z A G C X Y

Document number: DS45667 Rev. 2 - 2 11 of 12 www.diodes.com June 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. DML3010ALFDS IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICUL AR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which in corporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional - safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality co ntrol techniqu es, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. 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