DMJ7N70SK3
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 7
Technical content
Features
100% Unclamped Inductive Switch (UIS) Test in Production Low Gate Input Resistance Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data Package: TO252 Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) Ordering Information (Note 4) Part Number Package Packing Qty. Carrier DMJ7N70SK3-13 TO252 (DPAK) 2,500 Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information Internal Schematic G S D D Top View Pin Out Top View TO252 (DPAK) YYWW J7N70S = Manufacturer’s Marking J7N70S = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 21 = 2021) WW = Week Code (01 to 53) Green PART OBSOLETE - USE DMJ70H1D3SK3
Document number: DS36907 Rev. 9 - 4 2 of 7 www.diodes.com September 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMJ7N70SK3 NEW PRODUCT OBSOLETE – PART DISCONTINUED Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current (Note 5) VGS = 10V TC = +25° C TC = +100° C ID 3.9 2.5 A Maximum Body Diode Forward Current (Note 5) IS 3.0 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 8.0 A Avalanche Current (Note 6) IAR 1.5 A Avalanche Energy (Note 6) EAR 67 mJ Peak Diode Recovery dv/dt dv/dt 11.8 V/ns Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TC = +25° C PD 28 W TC = +100° C 11 Thermal Resistance, Junction to Ambient (Note 5) RθJA 38 ° C/W Thermal Resistance, Junction to Case (Note 5) RθJC 2.1 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 700 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS 1 µ A VDS = 700V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = ±30V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 2 2.9 4 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) 1 1.25 Ω VGS = 10V, ID = 2.5A Diode Forward Voltage VSD 0.9 1.3 V VGS = 0V, IS = 5A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss 351 pF VDS = 50V, f = 1MHz, VGS = 0V Output Capacitance Coss 66 Reverse Transfer Capacitance Crss 1.1 Gate Resistance RG 3.5 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg 13.9 nC VDD = 560V, ID = 5A, VGS = 10V Gate-Source Charge Qgs 1.9 Gate-Drain Charge Qgd 8.5 Turn-On Delay Time tD(ON) 8.5 ns VDD = 350V, VGS = 10V, RG = 4.7Ω, ID = 2.5A Turn-On Rise Time tR 11.6 Turn-Off Delay Time tD(OFF) 24.5 Turn-Off Fall Time tF 10 Body Diode Reverse Recovery Time tRR 212 ns VDD = 100V, IS = 5A, dI/dt = 100A/μs Body Diode Reverse Recovery Time (TJ = +150°C) tRR 251 ns Body Diode Reverse Recovery Charge QRR 1.8 µC Body Diode Reverse Recovery Charge (TJ = +150°C) QRR 2.3 µC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout . 6. UIS in production with VDD = 50V, VGS = 10V, L = 60mH, TJ = +25° C. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing .
Document number: DS36907 Rev. 9 - 4 5 of 7 www.diodes.com September 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMJ7N70SK3 NEW PRODUCT OBSOLETE – PART DISCONTINUED 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance R (t) = r(t) * R JA JA R = 2.26° C/WJA Duty Cycle, D = t1/ t2 D = 0.7 D = 0.5 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 Single Pulse D = 0.9
Document number: DS36907 Rev. 9 - 4 6 of 7 www.diodes.com September 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMJ7N70SK3 NEW PRODUCT OBSOLETE – PART DISCONTINUED Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.50 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 -- -- e 2.286 BSC E 6.45 6.70 6.58 E1 4.32 -- -- H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) Dimensions Value (in mm) C 4.572 X 1.060 X1 5.632 Y 2.600 Y1 5.700 Y2 10.700 E D b2( 2x) b( 3x) e c A 7° ±1° H Seating Plane Gauge Plane a 0.508 L 2.74REF X Y C
Document number: DS36907 Rev. 9 - 4 7 of 7 www.diodes.com September 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMJ7N70SK3 NEW PRODUCT OBSOLETE – PART DISCONTINUED IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF TH IRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suit ability of Diodes’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as sa fety and functional- safety related standards, and (d) ens uring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 5. 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Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion her eof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 9. This Notice may be periodically updated with the most recent version available at https://www.diodes.com/about/company/terms-and- conditions/important-notice DIODES is a trademark of Diodes Incorporated in the United States and other countries. The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries. © 2022 Diodes Incorporated. All Rights Reserved. www.diodes.com