DMG9N65CTI
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 5
Technical content
Features
Low Input Capacitance High BVDSS Rating for Power Application Low Input/Output Leakage Lead-Free Finish; RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: ITO220AB Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Below Weight: 1.85 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMG9N65CTI ITO220AB 50 pieces/Tube Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Equivalent Circuit Top View Pin Out Configuration D S GTop View Bottom View = Manufacturer’s Marking 9N65CTI = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 19 = 2019) WW = Week (01 to 53) ITO220AB YYWW AB 9N65CTI ITO220AB PART OBSOLETE - Use DMG7N65SCTI
Document number: DS36027 Rev. 5 - 4 2 of 5 www.diodes.com August 2019 © Diodes Incorporated DMG9N65CTI OBSOLETE – PART DISCONTINUED Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current (Notes 5 & 6) VGS = 10V Steady State TC = +25° C ID 9.0 A TC = +70°C 7.0 Pulsed Drain Current (Note 7) 10µs Pulse, Pulse Duty Cycle<=1% IDM 30 A Avalanche Current (Note 8) VDD = 100V, VGS = 10V, L = 60mH IAR 2.7 A Repetitive Avalanche Energy (Note 8) VDD = 100V, VGS = 10V, L = 60mH EAR 260 mJ Thermal Characteristics Characteristic Symbol Max Unit Power Dissipation (Note 5) TC = +25° C PD W TC = +70°C 8 Thermal Resistance, Junction to Case (Note 5) TC = +25° C RθJC 8.84 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 ° C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BVDSS 650 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current TJ = +25° C IDSS — — 1.0 µA VDS = 650V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±30V, VDS = 0V ON CHARACTERISTICS (Note 9) Gate Threshold Voltage VGS(TH) 3 — 5 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 0.7 1.3 Ω VGS = 10V, ID = 4.5A Forward Transfer Admittance |Yfs| — 8.5 — S VDS = 40V, ID = 4.5A Diode Forward Voltage VSD — 0.7 1.0 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss — 2310 — pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 122 — Reverse Transfer Capacitance Crss — 2.2 — Gate Resistance Rg — 2.2 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg — 39 — nC VGS = 10V, VDS = 520V, ID = 8A Gate-Source Charge Qgs — 8.5 — Gate-Drain Charge Qgd — 11.9 — Turn-On Delay Time tD(on) — 39 — ns VGS = 10V, VDS = 325V, Rg = 25Ω, ID = 8A Turn-On Rise Time tr — 29 — ns Turn-Off Delay Time tD(off) — 122 — ns Turn-Off Fall Time tf — 28 — ns Body Diode Reverse Recovery Time trr — 570 — ns dI/dt = 100A/µs, VDS = 100V, IF = 8A Body Diode Reverse Recovery Charge Qrr — 4.17 — µC Notes: 5. Device mounted on an infinite heatsink. 6. Drain current limited by maximum junction temperature . 7. Repetitive rating, pulse width limited by junction temperature. 8. IAR and EAR ratings are based on low frequency and duty cycles to keep T J = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to production testing. PART OBSOLETE - Use DMG7N65SCTI
Document number: DS36027 Rev. 5 - 4 3 of 5 www.diodes.com August 2019 © Diodes Incorporated DMG9N65CTI OBSOLETE – PART DISCONTINUED 0 4 8 12 16 20 V , DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DS I , DRAIN CURRENT (A)D 0.5 1.0 1.5 2.0 0 2 4 6 8 10 R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) I , DRAIN-SOURCE CURRENTD Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage V = 20VGS V = 10VGS 0.5 1.0 1.5 2.0 2.5 3.0 R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DS(ON) 50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C) Fig. 5 On-Resistance Variation with Temperature J V = V I = 10A GS D V = V I = 5A GS D 0.5 1.0 1.5 2.0 2.5 3.0 - 50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C) Fig. 6 On-Resistance Variation with Temperature J R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) V = V I = 5A GS D V = V I = 10A GS D 0 2 4 6 8 10 R , D R A I N - S O U R C E O N - R E S I S T A N C E ( D S ( O N ) I , DRAIN CURRENT (A) D Fig. 4 Typical On-Resistance vs. Drain Current and Temperature T = -55° C A T = 25° C A T = 85° C A T = 125° C A T = 150° C A V = 10V GS RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.001 0.01 0.1 0 1 2 3 4 5 6 V , GATE-SOURCE VOLTAGE (V) GS Fig. 2 Typical Transfer Characteristics I , D R A I N C U R R E N T ( A ) D V = 10V DS T = 150° C A T = 125° C A T = 85° C A T = 25° C A T = -55° C A ID, DRAIN CURRENT (A) (A) PART OBSOLETE - Use DMG7N65SCTI
Document number: DS36027 Rev. 5 - 4 4 of 5 www.diodes.com August 2019 © Diodes Incorporated DMG9N65CTI OBSOLETE – PART DISCONTINUED V , SOURCE-DRAIN VOLTAGE (V)SD Fig. 8 Diode Forward Voltage vs. Current I , SOURCE CURRENT (V)S T = 25 癈A Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. ITO220AB ITO220AB Dim Min Typ Max A 4.50 4.70 4.90 A1 3.04 3.24 3.44 A2 2.56 2.76 2.96 b 0.50 0.60 0.75 b1 1.10 1.20 1.35 c 0.50 0.60 0.70 D 15.67 15.87 16.07 D1 8.99 9.19 9.39 e 2.54 E 9.91 10.11 10.31 L 9.45 9.75 10.05 L1 15.80 16.00 16.20 P 2.98 3.18 3.38 Q 3.10 3.30 3.50 All Dimensions in mm -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Junction Temperature J V , G A T E T H R E S H O L D V O L T A G E ( V ) G S ( t h ) I = 1mA D I= 250µ A D VGS(TH), GATE THRESHOLD VOLTAGE (V) ID = 250A SECTION B-B Ø P E 5° 5° Q D Ø P b1 3x L e B A c 50° 5?5° 35° e B b 3x TA = 25°C PART OBSOLETE - Use DMG7N65SCTI
Document number: DS36027 Rev. 5 - 4 5 of 5 www.diodes.com August 2019 © Diodes Incorporated DMG9N65CTI OBSOLETE – PART DISCONTINUED IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other cha nges without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability a rising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products desc ribed herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, internation al or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into mul tiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or sys tems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be pr ovided by Diodes Incorporated. Further, Customers m ust fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2019, Diodes Incorporated www.diodes.com PART OBSOLETE - Use DMG7N65SCTI